FDMS86201 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FDMS86201

Type of FDMS86201 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 120V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 35.0

Maximum junction temperature (Tj), °C:

Rise Time of FDMS86201 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0115

Package: Power56

Equivalent transistors for FDMS86201

FDMS86201 PDF documents for downloads:

1.1. fdms86201.pdf Size:216K _fairchild_semi

Preliminary Datasheet April 2010 FDMS86201 N-Channel PowerTrench® MOSFET 120 V, 35 A, 11.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 11.6 A Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 14.5 m at VGS = 6 V, ID = 10.7 A been especially tailored to minimize the on-state resistance and Advanced Package and Silicon combination for low rDS(on) yet maintain superior switching performance. and high efficiency Application MSL1 robust package design DC-DC Conversion 100% UIL tested RoHS Compliant Bottom Top Pin 1 S G D 5 4 S S G S D 6 3 S D 7 2 D S D 8 1 D D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 120 V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 35 -Continuous (Silicon limited) TC = 25 °C 65 ID A -Co

2.1. fdms86200.pdf Size:211K _fairchild_semi

Preliminary Datasheet April 2010 FDMS86200 N-Channel Power Trench® MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 A been especially tailored to minimize the on-state resistance and Advanced Package and Silicon combination for low rDS(on) yet maintain superior switching performance. and high efficiency MSL1 robust package design Application 100% UIL tested DC-DC Conversion RoHS Compliant Bottom Top Pin 1 S G D 5 4 S S G S D 6 3 S D 7 2 D S D 1 D 8 D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 150 V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 35 -Continuous (Silicon limited) TC = 25 °C 52 ID A -Continuous TA

3.1. fdms86252.pdf Size:262K _fairchild_semi

August 2010 FDMS86252 N-Channel PowerTrench® MOSFET 150 V, 16 A, 51 m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 51 m? at VGS = 10 V, ID = 4.6 A Semiconductor’s advanced Power Trench® process that has Max rDS(on) = 70 m? at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Advanced package and silicon combination for low rDS(on) and high efficiency Application MSL1 robust package design DC-DC Conversion 100% UIL tested RoHS Compliant Bottom Top Pin 1 S G D 5 4 S S G S D 6 3 S D 7 2 D D S D 8 1 D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 150 V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 16 -Continuous (Silicon limited) TC = 25 °C 24 ID A -Continuous TA = 25 °C (Note 1a)

See also transistors datasheet: FDMS86102LZ , FDMS86103L , FDMS86103L , FDMS86104 , FDMS86104 , FDMS86105 , FDMS86105 , FDMS86200 , IRF5210 , FDMS8622 , FDMS8622 , FDMS86252 , FDMS86300 , FDMS86322 , FDMS86500L , FDMS86520L , FDMS8848NZ .

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