FDP3651U MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FDP3651U

Type of FDP3651U transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 100V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 80.0

Maximum junction temperature (Tj), °C:

Rise Time of FDP3651U transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.018

Package: TO220

Equivalent transistors for FDP3651U

FDP3651U PDF documents for downloads:

1.1. fdp3651u.pdf Size:644K _fairchild_semi

July 2006 FDP3651U N-Channel PowerTrench® MOSFET 100V, 80A, 15m? Features Applications • rDS(on)=13 m?(Typ.), VGS = 10V, ID = 40A • DC/DC converters and Off-Line UPS • Qg(TOT)=49 nc(Typ.), VGS = 10 V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low Qrr Body Diode • High Voltage Synchronous Rectifier • UIS Capability (Single Pulse/Repetitive Pulse) DRAIN SOURCE (FLANGE) DRAIN GATE TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 100 V VGSS Gate to Source Voltage ±20 V Drain Current -Continuous 80 ID A -Pulsed (Note 1) 320 PD Power Dissipation 255 W EAS Single Pulsed Avalanche Energy (Note 2) 266 mJ TJ, TSTG Operating and Storage Temperature -55 to 175 °C Maximum lead temperature soldering purposes, TL 300 °C 1/8” from case for 5 seconds Thermal Characteristics R?JA Thermal Resistance , Junction to A

4.1. fdb3652_fdp3652_fdi3652.pdf Size:263K _fairchild_semi

October 2003 FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench® MOSFET 100V, 61A, 16m? Features Applications • rDS(ON) = 14m? (Typ.), VGS = 10V, ID = 61A • DC/DC Converters and Off-line UPS • Qg(tot) = 41nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low QRR Body Diode • High Voltage Synchronous Rectifier • UIS Capability (Single Pulse and Repetitive Pulse) • Direct Injection / Diesel Injection Systems • Qualified to AEC Q101 • 42V Automotive Load Control • Electronic Valve Train Systems Formerly developmental type 82769 SOURCE DRAIN DRAIN (FLANGE) D GATE GATE SOURCE DRAIN G SOURCE GATE DRAIN TO-263AB TO-220AB TO-262AA S (FLANGE) DRAIN FDB SERIES FDP SERIES FDI SERIES (FLANGE) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V Drain Current 61 A Continuous (TC = 2

5.1. fdb3682_fdp3682.pdf Size:278K _fairchild_semi

September 2002 FDB3682 / FDP3682 N-Channel PowerTrench® MOSFET 100V, 32A, 36m? Features Applications • rDS(ON) = 32m? (Typ.), VGS = 10V, ID = 32A • DC/DC converters and Off-Line UPS • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low QRR Body Diode • High Voltage Synchronous Rectifier • UIS Capability (Single Pulse and Repetitive Pulse) • Direct Injection / Diesel Injection System • Qualified to AEC Q101 • 42V Automotive Load Control Formerly developmental type 82755 • Electronic Valve Train System SOURCE DRAIN DRAIN (FLANGE) GATE D GATE G SOURCE TO-263AB TO-220AB DRAIN S FDB SERIES FDP SERIES (FLANGE) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V Drain Current 32 A Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) 23 A Cont

5.2. fdb3632_fdp3632_fdi3632_fdh3632.pdf Size:656K _fairchild_semi

December 2008 FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9m? Features Applications • rDS(ON) = 7.5m? (Typ.), VGS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low QRR Body Diode • High Voltage Synchronous Rectifier • UIS Capability (Single Pulse and Repetitive Pulse) • Direct Injection / Diesel Injection Systems • Qualified to AEC Q101 • RoHS Compliant • 42V Automotive Load Control • Electronic Valve Train Systems D S S D DG G DRAIN DRAIN (FLANGE) (FLANGE) S D G DRAIN G G S DRAIN (FLANGE) TO-220AB TO-263AB TO-262AB TO-247 S FDP SERIES FDB SERIES FDI SERIES FDH SERIESD MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V Drain Current 80 A Continuous (TC < 111

5.3. fdp3672.pdf Size:237K _fairchild_semi

September 2003 FDP3672 N-Channel PowerTrench® MOSFET 105V, 41A, 33m? Features Applications • rDS(ON) = 25m? (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low QRR Body Diode • High Voltage Synchronous Rectifier • Optimized efficiency at high frequencies • Direct Injection / Diesel Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • 42V Automotive Load Control • Electronic Valve Train Systems Formerly developmental type 82760 D DRAIN SOURCE (FLANGE) DRAIN GATE G TO-220AB FDP SERIES S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 105 V VGS Gate to Source Voltage ±20 V Drain Current 41 A Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) 31 A Continuous (Tamb =

See also transistors datasheet: FDP2572 , FDP2614 , FDP2614 , FDP26N40 , FDP26N40 , FDP2710 , FDP2710_F085 , FDP33N25 , 2SK956 , FDP3651U , FDP3672 , FDP3682 , FDP3682 , FDP42AN15A0 , FDP51N25 , FDP52N20 , FDP52N20 .

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