FDP8880 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FDP8880

Type of FDP8880 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 54.0

Maximum junction temperature (Tj), °C:

Rise Time of FDP8880 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0116

Package: TO220

Equivalent transistors for FDP8880

FDP8880 PDF documents for downloads:

1.1. fdp8880_fdb8880.pdf Size:696K _fairchild_semi

0 May 2008 tmM FDP8880 / FDB8880 N-Channel PowerTrench® MOSFET 30V, 54A, 11.6m? General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 14.5m?, VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 11.6m?, VGS = 10V, ID = 40A controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. High performance trench technology for extremely low rDS(ON) Application Low gate charge DC / DC Converters High power and current handling capability RoHS Complicant DRAIN (FLANGE) (FLANGE) D DRAIN GATE SOURCE DRAIN GATE G SOURCE TO-220AB TO-263AB S FDP SERIES FDB SERIES www.fairchildsemicom ©2008 Fairchild Semiconductor Corporation 1 FDP8880 / FDB8880 Rev. A1 FDP8880 / FDB8880 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V

5.1. fdp8878.pdf Size:253K _fairchild_semi

November 2005 FDP8878 N-Channel Logic Level PowerTrench® MOSFET 30V, 40A, 15m? General Descriptions Features rDS(ON) = 15m?, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 19m?, VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventional switching PWM rDS(ON) controllers. It has been optimized for low gate charge, low Low gate charge rDS(ON) and fast switching speed. High power and current handling capability RoHS Compliant D DRAIN SOURCE (FLANGE) DRAIN G GATE TO-220AB D FDP SERIES MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 40 A Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 25oC, VGS = 4.5V) 36 A Pulsed (Note 4) 141 A L = 1mH, IAS = 11A 60 EAS Single Pulse Av

5.2. fdp8896.pdf Size:470K _fairchild_semi

N May 2008 tmM FDP8896 N-Channel PowerTrench® MOSFET 30V, 92A, 5.9m? General Description Features This N-Channel MOSFET has been designed specifically to • rDS(ON) = 5.9m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using • rDS(ON) = 7.0m?, VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low • High performance trench technology for extremely low rDS(ON) and fast switching speed. rDS(ON) • Low gate charge Applications • High power and current handling capability • DC/DC converters • RoHS Compliant (FLANGE) D DRAIN SOURCE DRAIN G GATE S TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 92 A Continuous (TC = 25oC, VGS = 10V) (Note 1) ID Continuous (TC = 25oC, VGS = 4.5V) (Note 1) 85 A Continuous (Tamb = 25oC

5.3. fdp8870.pdf Size:463K _fairchild_semi

e May 2008 FDP8870 tmM N-Channel PowerTrench® MOSFET 30V, 156A, 4.1m? General Description Features This N-Channel MOSFET has been designed specifically to • rDS(ON) = 4.1m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using • rDS(ON) = 4.6m?, VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low • High performance trench technology for extremely low rDS(ON) and fast switching speed. rDS(ON) • Low gate charge Applications • High power and current handling capability • DC/DC converters • RoHS Compliant (FLANGE) D DRAIN SOURCE DRAIN G GATE S TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 156 A Continuous (TC = 25oC, VGS = 10V) (Note 1) ID Continuous (TC = 25oC, VGS = 4.5V) (Note 1) 147 A Continuous (Tamb = 25

5.4. fdp8876.pdf Size:308K _fairchild_semi

November 2005 FDP8876 N-Channel PowerTrench® MOSFET 30V, 71A, 8.5m? General Descriptions Features rDS(ON) = 8.5m?, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m?, VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventional switching PWM rDS(ON) controllers. It has been optimized for low gate charge, low Low gate charge rDS(ON) and fast switching speed. High power and current handling capability RoHS Compliant DRAIN D SOURCE (FLANGE) DRAIN GATE G TO-220AB S FDP SERIES MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 70 A Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 25oC, VGS = 4.5V) 64 A Pulsed Figure 4 A EAS Single Pulse Avalanche Energy (Note 1) 180 mJ PD

5.5. fdp8874.pdf Size:469K _fairchild_semi

N May 2008 tmM FDP8874 N-Channel PowerTrench® MOSFET 30V, 114A, 5.3m? General Description Features This N-Channel MOSFET has been designed specifically to • rDS(ON) = 5.3m?, VGS = 10V, ID = 40A improve the overall efficiency of DC/DC converters using • rDS(ON) = 6.6m?, VGS = 4.5V, ID = 40A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low • High performance trench technology for extremely low rDS(ON) and fast switching speed. rDS(ON) • Low gate charge Applications • High power and current handling capability • DC/DC converters • RoHS Compliant (FLANGE) D DRAIN SOURCE DRAIN G GATE S TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 114 A Continuous (TC = 25oC, VGS = 10V) (Note 1) ID Continuous (TC = 25oC, VGS = 4.5V) (Note 1) 102 A Continuous (Tamb = 2

5.6. fdp8860.pdf Size:323K _fairchild_semi

September 2006 FDP8860 tm N-Channel PowerTrench® MOSFET 30V, 80A, 2.5m? Features General Description Max rDS(on) = 2.5m? at VGS = 10V, ID = 80A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either Max rDS(on) = 2.9m? at VGS = 4.5V, ID = 80A synchronous or conventional switching PWM controllers. It has Low Miller Charge been optimized for low gate charge, low rDS(on) and fast switching speed. Low Qrr Body Diode UIL Capability (Single Pulse and Repetitive Pulse) Application RoHS Compliant DC - DC Conversion Start / Alternator Sytems D G G TO-220 D FDP Series S S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25°C 80 ID -Continuous (Silicon limited) TC = 25°C 219 A -Pulsed (Note 1) 556 EAS Single Pulse Avalanche Energy (N

See also transistors datasheet: FDP8870 , FDP8870_F085 , FDP8870_F085 , FDP8874 , FDP8874 , FDP8876 , FDP8876 , FDP8880 , 2N5485 , FDP8896 , FDP8896 , FDP8N50NZ , FDPF10N50FT , FDPF10N50UT , FDPF10N60NZ , FDPF10N60NZ , FDPF10N60ZUT .

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