FDS6682 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS6682
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 14 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 22 nC
Rise Time (tr): 7 nS
Drain-Source Capacitance (Cd): 582 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
Package: SO-8
FDS6682 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS6682 Datasheet (PDF)
fds6682.pdf
February 2004FDS668230V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 14 A, 30 V. RDS(ON) = 7.5 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 9.0 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charge (
fds6682.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds6680.pdf
April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventional switching PWM controllers. O
fds6681z.pdf
June 2005 FDS6681Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild 20 A, 30 V. RDS(ON) = 4.6 m @ VGS = 10 V Semiconductors advanced PowerTrench process that RDS(ON) = 6.5 m @ VGS = 4.5 V has been especially tailored to minimize the on-state Extended VGSS range (25V) for battery a
fds6680a.pdf
November 2004 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V using Fairchild Semiconductors advanced Power RDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maint
fds6688.pdf
January 2004FDS668830V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 16 A, 30 V. RDS(ON) = 6 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 7 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Ultra-low gate charge
fds6680s.pdf
April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventional switching PWM controllers. O
fds6680as.pdf
May 2008 tmFDS6680AS 30V N-Channel PowerTrench SyncFETGeneral Description Features The FDS6680AS is designed to replace a single SO-8 11.5 A, 30 V. RDS(ON) max= 10.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
fds6688s.pdf
November 2007tmFDS6688S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6688S is designed to replace a single SO-8 16 A, 30 V. RDS(ON) = 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 7.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
fds6688as.pdf
November 2008tmFDS6688AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6688AS is designed to replace a single SO-8 14.5 A, 30 V. RDS(ON) max= 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 7.3 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a
fds6680a.pdf
FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET Features General Description 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 VThis N-Channel Logic Level MOSFET is produced using ON Semiconductors advanced PowerRDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maintain Ultra-low gate
fds6680as.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds6681z.pdf
FDS6681Zwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV p-channel power MOSFETVDS (V) -30RDS(on) max. () at VGS = 10 V 0.0050 Enables higher power densityRDS(on) max. () at VGS = 4.5 V 0.0080 100 % Rg and UIS testedQg typ. (nC) 27ID (A) 18Configuration SingleAPPLICATIONSSO-8 SingleSD Battery management in m
Datasheet: FDS6673BZF085 , FDS6675BZ , FDS6676AS , STA6620 , FDS6679AZ , FDS6680AS , STA6611 , FDS6681Z , 50N06 , STA6610 , FDS6690AS , STA4470 , FDS6692A , SP8651 , FDS6699S , SP8611 , FDS6892A .
