FDS6692A PDF and Equivalents Search

January 2010 FDS6692A N-Channel PowerTrench MOSFET 30V, 9A, 11.5m Features General Description RDS(ON) = 11.5m , VGS = 10V, ID = 9A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using RDS(ON) = 14.5m , VGS = 4.5V, ID = 8.2A either synchronous or conventional switching PWM controllers. It has been optimized for ... See More ⇒

January 2005 FDS6699S 30V N-Channel PowerTrench SyncFET Features General Description 21 A, 30 V Max RDS(ON) = 3.6 m @ VGS = 10 V The FDS6699S is designed to replace a single SO-8 MOSFET Max RDS(ON) = 4.5 m @ VGS = 4.5 V and Schottky diode in synchronous DC DC power supplies. This 30V MOSFET is designed to maximize power conversion Includes SyncFET Schottky body diode ... See More ⇒

February 2007 tm FDS6690A Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 11 A, 30 V. RDS(ON) = 12.5 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 17.0 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resi... See More ⇒

May 2008 tm FDS6690AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 10 A, 30 V. RDS(ON) max= 12 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) max= 15 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low ... See More ⇒

February 1997 PRELIMINARY FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features 10 A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V This N Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.0200 @ VGS = 4.5 V. converters using either synchronous or conventional switching Optimize... See More ⇒

January 2004 FDS6694 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12 A, 30 V. RDS(ON) = 11 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 13.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Lo... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

FDS6699S www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch S... See More ⇒

FDS6694 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-... See More ⇒