FDS6699S MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS6699S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 65 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 1050 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0036 Ohm
Package: SO-8
FDS6699S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS6699S Datasheet (PDF)
fds6699s.pdf
January 2005FDS6699S30V N-Channel PowerTrench SyncFETFeatures General Description 21 A, 30 V Max RDS(ON) = 3.6 m @ VGS = 10 V The FDS6699S is designed to replace a single SO-8 MOSFETMax RDS(ON) = 4.5 m @ VGS = 4.5 V and Schottky diode in synchronous DC:DC power supplies.This 30V MOSFET is designed to maximize power conversion Includes SyncFET Schottky body diode
fds6699s.pdf
FDS6699Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS
fds6690a.pdf
February 2007tmFDS6690A Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 11 A, 30 V. RDS(ON) = 12.5 m @ VGS = 10 V using Fairchild Semiconductors advanced RDS(ON) = 17.0 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resi
fds6690as.pdf
May 2008tmFDS6690AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 10 A, 30 V. RDS(ON) max= 12 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 15 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
fds6690.pdf
February 1997PRELIMINARY FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description Features10 A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V This N Channel Logic Level MOSFET has been designedspecifically to improve the overall efficiency of DC/DC RDS(ON) = 0.0200 @ VGS = 4.5 V.converters using either synchronous or conventional switchingOptimize
fds6692a.pdf
January 2010FDS6692AN-Channel PowerTrench MOSFET 30V, 9A, 11.5mFeatures General Description RDS(ON) = 11.5m, VGS = 10V, ID = 9A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using RDS(ON) = 14.5m, VGS = 4.5V, ID = 8.2Aeither synchronous or conventional switching PWM controllers. It has been optimized for
fds6694.pdf
January 2004FDS669430V N-Channel Fast Switching PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 12 A, 30 V. RDS(ON) = 11 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 13.5 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Lo
fds6690as.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds6694.pdf
FDS6694www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-
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