FDS6910 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FDS6910

Type of FDS6910 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 7.5

Maximum junction temperature (Tj), °C:

Rise Time of FDS6910 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.013

Package: SOIC

Equivalent transistors for FDS6910

FDS6910 PDF documents for downloads:

1.1. fds6910.pdf Size:112K _fairchild_semi

September 2004 FDS6910 ? ? ? Dual N-Channel Logic Level PowerTrench? MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced • 7.5 A, 30 V. RDS(ON) = 13 m? @ VGS = 10 V using Fairchild Semiconductor’s advanced RDS(ON) = 17 m? @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain • Fast switching speed superior switching performance. • Low gate charge These devices are well suited for low voltage and battery powered applications where low in-line power • High performance trench technology for extremely loss and fast switching are required. low RDS(ON) • High power and current handling capability DD1 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 SO-8 Q2 G S1 8 1 S G2 S S2 SO-8 S Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 20 V ID Drai

4.1. fds6912.pdf Size:75K _fairchild_semi

July 2000 FDS6912 ? ? ? Dual N-Channel Logic Level PWM Optimized PowerTrench? MOSFET General Description Features These N-Channel Logic Level MOSFETs have been • 6 A, 30 V. RDS(ON) = 0.028 ? @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.042 ? @ VGS = 4.5 V. DC/DC converters using either synchronous or • Optimized for use in switching DC/DC converters conventional switching PWM controllers. with PWM controllers These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Very fast switching. RDS(ON) specifications. • Low gate charge The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D1 5 4 D1 D2 Q1 6 3 D2 7 2 Q2 G1 8 1 S1 SO-8 G2 S2 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±

4.2. fds6912a.pdf Size:120K _fairchild_semi

July 2003 FDS6912A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced • 6 A, 30 V. RDS(ON) = 28 m? @ VGS = 10 V using Fairchild Semiconductor’s advanced RDS(ON) = 35 m? @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain • Fast switching speed superior switching performance. • Low gate charge These devices are well suited for low voltage and battery powered applications where low in-line power • High performance trench technology for extremely loss and fast switching are required. low RDS(ON) • High power and current handling capability DD1 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 SO-8 Q2 G S1 8 1 S G2 S S2 SO-8 S Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1a) 6 A

4.3. fds6911.pdf Size:110K _fairchild_semi

March 2006 FDS6911 Dual N-Channel Logic Level PowerTrench® MOSFET 20V, 7.5A, 13m? General Description Features These N-Channel Logic Level MOSFETs are produced rDS(on) = 13 m? @ VGS = 10 V using Fairchild Semiconductor’s advanced rDS(on) = 17 m? @ VGS = 4.5 V PowerTrench process that has been especially tailored Fast switching speed to minimize the on-state resistance and yet maintain superior switching performance. Low gate charge These devices are well suited for low voltage and High performance trench technology for extremely battery powered applications where low in-line power loss and fast switching are required. low RDS(ON) High power and current handling capability DD2 5 4 D2 D D1 D Q1 6 3 D1 D 7 2 G2 SO-8 Q2 S2 G 8 1 G1 S S1 S Pin 1 SO-8 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 20 V ID Drain Current

See also transistors datasheet: FDS6699S , FDS6892A , FDS6898A , FDS6898AZ , FDS6898AZ_F085 , FDS6900AS , FDS6900AS , FDS6910 , BUZ11 , FDS6911 , FDS6930B , FDS6930B , FDS6982AS , FDS6982AS , FDS6984AS , FDS6984AS , FDS6986AS .

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