All MOSFET Datasheet

 

FDS8638 MOSFET (IC) Datasheet. Cross Reference Search. FDS8638 Equivalent

Type Designator: FDS8638

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 2.5

Maximum Drain-Source Voltage |Vds|, V: 40

Maximum Gate-Source Voltage |Vgs|, V: 20

Maximum Drain Current |Id|, A: 18

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.0043

Package: SOIC

FDS8638 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FDS8638 PDF doc:

1.1. fds8638.pdf Size:280K _fairchild_semi

FDS8638
FDS8638

March 2009 FDS8638 N-Channel PowerTrench® MOSFET 40 V, 18 A, 4.3 m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.3 m? at VGS = 10 V, ID = 18 A Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and Max rDS(on) = 5.4 m? at VGS = 4.5 V, ID = 16 A yet maintain superior sw

5.1. fds86240.pdf Size:238K _fairchild_semi

FDS8638
FDS8638

June 2010 FDS86240 N-Channel PowerTrench® MOSFET 150 V, 7.5 A, 19.8 m? Features General Description Max rDS(on) = 19.8 m? at VGS = 10 V, ID = 7.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 26 m? at VGS = 6 V, ID = 6.4 A been optimized for rDS(on), switching performance and High performance trench techno

5.2. fds8690.pdf Size:356K _fairchild_semi

FDS8638
FDS8638

January 2006 FDS8690 N-Channel PowerTrench® MOSFET 30V, 14A, 7.6mΩ General Description Features Max rDS(on) = 7.6mΩ, VGS = 10V, ID = 14A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 11.4mΩ, VGS = 4.5V, ID = 11.5A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conv

5.3. fds86540.pdf Size:256K _fairchild_semi

FDS8638
FDS8638

May 2012 FDS86540 N-Channel PowerTrench® MOSFET 60 V, 18 A, 4.5 mΩ Features General Description Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A ringing of DC/DC converters using either synchronous or High performanc

5.4. fds86140.pdf Size:250K _fairchild_semi

FDS8638
FDS8638

March 2011 FDS86140 N-Channel PowerTrench® MOSFET 100 V, 11.2 A, 9.8 m? Features General Description Max rDS(on) = 9.8 m? at VGS = 10 V, ID = 11.2 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 16 m? at VGS = 6 V, ID = 9 A Semiconductor‘s advanced Power Trench® process that has High performance trench technologh for extremely low rDS(on) been optimized for rDS(on)

5.5. fds86141.pdf Size:250K _fairchild_semi

FDS8638
FDS8638

July 2011 FDS86141 N-Channel Power Trench® MOSFET 100 V, 7 A, 23 m? Features General Description Max rDS(on) = 23 m? at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 36 m? at VGS = 6 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and High performance trench tec

5.6. fds86252.pdf Size:258K _fairchild_semi

FDS8638
FDS8638

April 2011 FDS86252 N-Channel Power Trench® MOSFET 150 V, 4.5 A, 55 m? Features General Description Max rDS(on) = 55 m? at VGS = 10 V, ID = 4.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 80 m? at VGS = 6 V, ID = 3.7 A been especially tailored to minimize the on-state resistance and High performance trench

5.7. fds8672s.pdf Size:253K _fairchild_semi

FDS8638
FDS8638

December 2007 FDS8672S tm N-Channel PowerTrench® SyncFET™ 30V, 18A, 4.8mΩ Features General Description Max rDS(on) = 4.8mΩ at VGS = 10V, ID = 18A The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A MOSFET is designed to maximize power conversion efficiency, pro

5.8. fds86242.pdf Size:251K _fairchild_semi

FDS8638
FDS8638

August 2010 FDS86242 N-Channel PowerTrench® MOSFET 150 V, 4.1 A, 67 m? Features General Description Max rDS(on) = 67 m? at VGS = 10 V, ID = 4.1 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 98 m? at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching performance and High performance trench technol

5.9. fds86106.pdf Size:257K _fairchild_semi

FDS8638
FDS8638

July 2011 FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 m? Features General Description Max rDS(on) = 105 m? at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 171 m? at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) been optimized for rDS(on

See also transistors datasheet: SP8010E , FDS86140 , SP8009EL , FDS86141 , SP8005 , FDS86240 , FDS86242 , FDS86252 , IRF1405 , FDS8813NZ , SP632S , FDS8817NZ , SP4412 , FDS8840NZ , FDS8842NZ , FDS8858CZ , SP4401 .

Search Terms:

 FDS8638 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


FDS8638
  FDS8638
  FDS8638
  FDS8638
 
FDS8638
  FDS8638
  FDS8638
  FDS8638
 

social 

LIST

Last Update

MOSFET: IXFH50N50P3 | IXFQ50N50P3 | IXFT50N50P3 | IPF06N03LA | IPS06N03LA | IPU06N03LA | IPD06N03LA | 2SK1202 | SIHFD123 | IRFD123 | IRF630MFP | SSM70T03J | SSM70T03H | AP9916J | AP9916H |

Enter a full or partial SMD code with a minimum of 2 letters or numbers