All MOSFET. Datasheet

 

FDS8638 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDS8638

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0043 Ohm

Package: SOIC

FDS8638 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FDS8638 PDF doc:

1.1. fds8638.pdf Size:280K _fairchild_semi

FDS8638
FDS8638

March 2009 FDS8638 N-Channel PowerTrench® MOSFET 40 V, 18 A, 4.3 m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.3 m? at VGS = 10 V, ID = 18 A Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and Max rDS(on) = 5.4 m? at VGS = 4.5 V, ID = 16 A yet maintain superior sw

5.1. fds86240.pdf Size:238K _fairchild_semi

FDS8638
FDS8638

June 2010 FDS86240 N-Channel PowerTrench® MOSFET 150 V, 7.5 A, 19.8 m? Features General Description Max rDS(on) = 19.8 m? at VGS = 10 V, ID = 7.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 26 m? at VGS = 6 V, ID = 6.4 A been optimized for rDS(on), switching performance and High performance trench techno

5.2. fds8690.pdf Size:356K _fairchild_semi

FDS8638
FDS8638

January 2006 FDS8690 N-Channel PowerTrench® MOSFET 30V, 14A, 7.6mΩ General Description Features Max rDS(on) = 7.6mΩ, VGS = 10V, ID = 14A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 11.4mΩ, VGS = 4.5V, ID = 11.5A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conv

5.3. fds86540.pdf Size:256K _fairchild_semi

FDS8638
FDS8638

May 2012 FDS86540 N-Channel PowerTrench® MOSFET 60 V, 18 A, 4.5 mΩ Features General Description Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A ringing of DC/DC converters using either synchronous or High performanc

5.4. fds86140.pdf Size:250K _fairchild_semi

FDS8638
FDS8638

March 2011 FDS86140 N-Channel PowerTrench® MOSFET 100 V, 11.2 A, 9.8 m? Features General Description Max rDS(on) = 9.8 m? at VGS = 10 V, ID = 11.2 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 16 m? at VGS = 6 V, ID = 9 A Semiconductor‘s advanced Power Trench® process that has High performance trench technologh for extremely low rDS(on) been optimized for rDS(on)

5.5. fds86141.pdf Size:250K _fairchild_semi

FDS8638
FDS8638

July 2011 FDS86141 N-Channel Power Trench® MOSFET 100 V, 7 A, 23 m? Features General Description Max rDS(on) = 23 m? at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 36 m? at VGS = 6 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and High performance trench tec

5.6. fds86252.pdf Size:258K _fairchild_semi

FDS8638
FDS8638

April 2011 FDS86252 N-Channel Power Trench® MOSFET 150 V, 4.5 A, 55 m? Features General Description Max rDS(on) = 55 m? at VGS = 10 V, ID = 4.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 80 m? at VGS = 6 V, ID = 3.7 A been especially tailored to minimize the on-state resistance and High performance trench

5.7. fds8672s.pdf Size:253K _fairchild_semi

FDS8638
FDS8638

December 2007 FDS8672S tm N-Channel PowerTrench® SyncFET™ 30V, 18A, 4.8mΩ Features General Description Max rDS(on) = 4.8mΩ at VGS = 10V, ID = 18A The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A MOSFET is designed to maximize power conversion efficiency, pro

5.8. fds86242.pdf Size:251K _fairchild_semi

FDS8638
FDS8638

August 2010 FDS86242 N-Channel PowerTrench® MOSFET 150 V, 4.1 A, 67 m? Features General Description Max rDS(on) = 67 m? at VGS = 10 V, ID = 4.1 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 98 m? at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching performance and High performance trench technol

5.9. fds86106.pdf Size:257K _fairchild_semi

FDS8638
FDS8638

July 2011 FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 m? Features General Description Max rDS(on) = 105 m? at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 171 m? at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) been optimized for rDS(on

Datasheet: SP8010E , FDS86140 , SP8009EL , FDS86141 , SP8005 , FDS86240 , FDS86242 , FDS86252 , IRF1405 , FDS8813NZ , SP632S , FDS8817NZ , SP4412 , FDS8840NZ , FDS8842NZ , FDS8858CZ , SP4401 .

 


FDS8638
  FDS8638
  FDS8638
  FDS8638
 
FDS8638
  FDS8638
  FDS8638
  FDS8638
 

social 

LIST

Last Update

MOSFET: 2SK642 | 2SK641 | SVF2N60D | SVF2N60T | SVF2N60F | SVF2N60M | FQP630 | FMR23N50E | FMV23N50E | FMH23N50E | STK0460F | UTC50N06L | TSP8N60M | TSF8N60M | STK630F |

Enter a full or partial SMD code with a minimum of 2 letters or numbers