FDS8858CZ MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FDS8858CZ

Type of FDS8858CZ transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 8.6

Maximum junction temperature (Tj), °C:

Rise Time of FDS8858CZ transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.017

Package: SOIC

Equivalent transistors for FDS8858CZ

FDS8858CZ PDF documents for downloads:

1.1. fds8858cz.pdf Size:423K _fairchild_semi

May 2009 FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET N-Channel: 30V, 8.6A, 17.0m? P-Channel: -30V, -7.3A, 20.5m? Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s Max rDS(on) = 17m? at VGS = 10V, ID = 8.6A advanced PowerTrench process that has been especially Max rDS(on) = 20m? at VGS = 4.5V, ID = 7.3A tailored to minimize on-state resistance and yet maintain superior switching performance. Q2: P-Channel Max rDS(on) = 20.5m? at VGS = -10V, ID = -7.3A These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast Max rDS(on) = 34.5m? at VGS = -4.5V, ID = -5.6A switching are required. High power and handing capability in a widely used surface mount package Application Fast switching speed Inverter Synchronous Buck D2 Q2 D2 D2 5 4 G2 D1 D1 D2 6 3 S2 SO-8 Q1 2 D1 7 G1 G2 S2 G1 D1

5.1. fds8878.pdf Size:652K _fairchild_semi

December 2008 FDS8878 N-Channel PowerTrench® MOSFET 30V, 10.2A, 14m? Features General Description rDS(on) = 14m?, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 17m?, VGS = 4.5V, ID = 9.3A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low rDS(on) and fast switching speed. rDS(on) Applications Low gate charge DC/DC converters High power and current handling capability RoHS Compliant Branding Dash 5 4 6 3 5 1 7 2 2 3 4 8 1 SO-8 ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS8878 Rev. C FDS8878 N-Channel PowerTrench MOSFET ® MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 10.2 A Continuou

5.2. fds8876.pdf Size:622K _fairchild_semi

April 2007 tm FDS8876 N-Channel PowerTrench® MOSFET 30V, 12.5A, 8.2m? Features General Description rDS(on) = 8.2m?, VGS = 10V, ID = 12.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 10.2m?, VGS = 4.5V, ID = 11.4A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low rDS(on) and fast switching speed. rDS(on) Applications Low gate charge DC/DC converters High power and current handling capability RoHS Compliant Branding Dash 5 4 6 3 5 1 7 2 2 3 4 8 1 SO-8 ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS8876 Rev. B FDS8876 N-Channel PowerTrench MOSFET ® MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 12.5 A Con

5.3. fds8813nz.pdf Size:335K _fairchild_semi

November 2008 FDS8813NZ N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.5m? at VGS = 10V, ID = 18.5A Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 6.0m? at VGS = 4.5V, ID =16A been especially tailored to minimize the on-state resistance. HBM ESD protection level of 5.6KV typical (note 3) This device is well suited for Power Management and load High performance trench technology for extremely low rDS(on) switching applications common in Notebook Computers and High power and current handling capability Portable Battery Packs. RoHS compliant D D G D D D S D G S D SO-8 S S S D S Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (Note 1a) 18.5 ID A -Pulsed 74 EAS Single Pulse Avalanch

5.4. fds8840nz.pdf Size:285K _fairchild_semi

April 2009 FDS8840NZ N-Channel PowerTrench® MOSFET 40 V, 18.6 A, 4.5 m? Features General Description Max rDS(on) = 4.5 m? at VGS = 10 V, ID = 18.6 A The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 6.0 m? at VGS = 4.5 V, ID = 14.9 A package technologies have been combined to offer the lowest HBM ESD protection level of 6 kV typical(note 3) rDS(on) while maintaining excellent switching performance. High performance trench technology for extremely low rDS(on) Applications and fast switching Synchronous Buck for Vcore and Server High power and current handling capability Notebook Battery Pack Termination is Lead-free and RoHS Compliant Load Switch D D D G D D D S D S G SO-8 S D S S Pin 1 S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V Drain Current

5.5. fds8880.pdf Size:620K _fairchild_semi

April 2007 tm FDS8880 N-Channel PowerTrench® MOSFET 30V, 11.6A, 10m? Features General Description rDS(on) = 10m?, VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m?, VGS = 4.5V, ID = 10.7A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low rDS(on) and fast switching speed. rDS(on) Applications Low gate charge DC/DC converters High power and current handling capability RoHS Compliant Branding Dash 5 4 6 3 5 1 7 2 2 3 4 8 1 SO-8 ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS8880 Rev. B FDS8880 N-Channel PowerTrench MOSFET ® MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 11.6 A Continu

5.6. fds8842nz.pdf Size:304K _fairchild_semi

February 2009 FDS8842NZ N-Channel PowerTrench® MOSFET 40 V, 14.9 A, 7.0 m? Features General Description Max rDS(on) = 7.0 m? at VGS = 10 V, ID = 14.9 A The FDS8842NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 11.6 m? at VGS = 4.5 V, ID = 11.6 A package technologies have been combined to offer the lowest HBM ESD protection level of 4.4 kV typical(note 3) rDS(on) while maintaining excellent switching performance. High performance trench technology for extremely low rDS(on) Applications and fast switching Synchronous Buck for Notebook Vcore and Server High power and current handling capability Notebook Battery Termination is Lead-free and RoHS Compliant Load Switch D D D G D D D S D S G SO-8 S D S S Pin 1 S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V Dra

5.7. fds8817nz.pdf Size:306K _fairchild_semi

November 2008 FDS8817NZ N-Channel PowerTrench® MOSFET 30V, 15A, 7.0m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7m? at VGS = 10V, ID = 15A Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 10m? at VGS = 4.5V, ID =12.6A been especially tailored to minimize the on-state resistance. HBM ESD protection level of 3.8KV typical (note 3) This device is well suited for Power Management and load High performance trench technology for extremely low rDS(on) switching applications common in Notebook Computers and High power and current handling capability Portable Battery Packs. RoHS compliant D D G D D D S D G D S SO-8 S S S D S Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (Note 1a) 15 ID A -Pulsed 60 EAS Single Pulse Avalanche Energy (No

5.8. fds8882.pdf Size:280K _fairchild_semi

December 2008 FDS8882 N-Channel PowerTrench® MOSFET 30 V, 9 A, 20.0 m? Features General Description Max rDS(on) = 20.0 m? at VGS = 10 V, ID = 9 A The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 22.5 m? at VGS = 4.5 V, ID = 8 A package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. High performance trench technology for extremely low rDS(on) and fast switching Applications High power and current handling capability Notebook System Regulators Termination is Lead-free and RoHS Compliant DC/DC Converters D D G 5 4 D D 6 D D 3 S 7 D 2 S G SO-8 S 8 1 D S S Pin 1 S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current -Continuous 9 ID A -Pulsed 21 EAS Single Pulse Avalanche Energy (N

5.9. fds8870.pdf Size:684K _fairchild_semi

April 2007 tm FDS8870 N-Channel PowerTrench® MOSFET 30V, 18A, 4.2m? Features General Description rDS(on) = 4.2m?, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 4.9m?, VGS = 4.5V, ID = 17A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low rDS(on) and fast switching speed. rDS(on) Applications Low gate charge DC/DC converters High power and current handling capability RoHS Compliant Branding Dash 5 4 6 3 5 1 7 2 2 3 4 8 1 SO-8 ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS8870 Rev. B FDS8870 N-Channel PowerTrench MOSFET ® MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 18 A Continuous (

5.10. fds8896.pdf Size:638K _fairchild_semi

April 2007 tm FDS8896 N-Channel PowerTrench® MOSFET 30V, 15A, 6.0m? Features General Description rDS(on) = 6.0m?, VGS = 10V, ID = 15A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.3m?, VGS = 4.5V, ID = 14A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low rDS(on) and fast switching speed. rDS(on) Applications Low gate charge DC/DC converters High power and current handling capability RoHS Compliant Branding Dash 5 4 6 3 5 1 7 2 2 3 4 8 1 SO-8 ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS8896 Rev. B FDS8896 N-Channel PowerTrench MOSFET ® MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 15 A Continuous (

5.11. fds8812nz.pdf Size:469K _fairchild_semi

November 2008 FDS8812NZ N-Channel PowerTrench® MOSFET 30V, 20A, 4.0m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.0m? at VGS = 10V, ID = 20A Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 4.9m? at VGS = 4.5V, ID =18A been especially tailored to minimize the on-state resistance. HBM ESD protection level of 6.4KV typical (note 3) This device is well suited for Power Management and load High performance trench technology for extremely low rDS(on) switching applications common in Notebook Computers and High power and current handling capability Portable Battery Packs. RoHS compliant D G D D D D S D G D S SO-8 S S D S S Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (Note 1a) 20 ID A -Pulsed 80 EAS Single Pulse Avalanche Energy (

5.12. fds8884.pdf Size:305K _fairchild_semi

February 2006 FDS8884 N-Channel PowerTrench® MOSFET 30V, 8.5A, 23m? General Descriptions Features Max rDS(on) = 23m? at VGS = 10V, ID = 8.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m? at VGS = 4.5V, ID = 7.5A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge rDS(on) and fast switching speed. 100% RG Tested RoHS Compliant D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current Continuous (Note 1a) 8.5 A ID Pulsed 40 A EAS Single Pulse Avalanche Energy (Note 2) 32 mJ Power dissipation 2.5 W PD Derate above 25oC20 mW/oC o TJ, TSTG Operating and Storage Temperature -55 to 150 C Thermal Characteristics o R?JA Thermal Resistance, Junc

See also transistors datasheet: FDS8638 , FDS8813NZ , FDS8813NZ , FDS8817NZ , FDS8817NZ , FDS8840NZ , FDS8842NZ , FDS8858CZ , 2SK105 , FDS8858CZ , FDS8870 , FDS8870 , FDS8876 , FDS8876 , FDS8878 , FDS8878 , FDS8880 .

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