FDS8958A_F085 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FDS8958A_F085

Type of FDS8958A_F085 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 7.0

Maximum junction temperature (Tj), °C:

Rise Time of FDS8958A_F085 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.028

Package: SOIC

Equivalent transistors for FDS8958A_F085

FDS8958A_F085 PDF documents for downloads:

1.1. fds8958a_f085.pdf Size:798K _fairchild_semi

February 2010 tm FDS8958A_F085 ? ? ? Dual N & P-Channel PowerTrench? MOSFET General Description Features These dual N- and P-Channel enhancement mode • Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028? @ VGS = 10V Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.040? @ VGS = 4.5V on-state ressitance and yet maintain superior switching • Q2: P-Channel performance. -5A, -30V RDS(on) = 0.052? @ VGS = -10V These devices are well suited for low voltage and RDS(on) = 0.080? @ VGS = -4.5V battery powered applications where low in-line power loss and fast switching are required. • Fast switching speed • High power and handling capability in a widely used surface mount package • Qualified to AEC Q101 • RoHS Compliant Q2 DD2 D2 5 4 D DD1 D1 D 6 3 Q1 7 2 G2 SO-8 S2 G G1 S 8 1 S1 S Pin 1 SO-8 S Absolute Maximum Ratings TA = 25°C

2.1. fds8958a.pdf Size:521K _fairchild_semi

April 2008 tm FDS8958A ? ? ? Dual N & P-Channel PowerTrench? MOSFET General Description Features These dual N- and P-Channel enhancement mode • Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028? @ VGS = 10V Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.040? @ VGS = 4.5V on-state ressitance and yet maintain superior switching performance. • Q2: P-Channel -5A, -30V RDS(on) = 0.052? @ VGS = -10V These devices are well suited for low voltage and battery powered applications where low in-line power RDS(on) = 0.080? @ VGS = -4.5V loss and fast switching are required. • Fast switching speed • High power and handling capability in a widely used surface mount package Q2 DD2 5 4 D2 D DD1 6 3 D1 D Q1 7 2 G2 SO-8 S2 G 8 1 G1 S S1 S Pin 1 SO-8 S Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Q1 Q2

5.1. fds8949_f085.pdf Size:539K _fairchild_semi

February 2010 FDS8949_F085 tm Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A, 29m? Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m? at VGS = 10V using Fairchild Semiconductor’s advanced Max rDS(on) = 36m? at VGS = 4.5V PowerTrench® process that has been especially tailored Low gate charge to minimize the on-state resistance and yet maintain superior switching performance. High performance trench technology for extremely low These devices are well suited for low voltage and rDS(on) battery powered applications where low in-line power High power and current handling capability loss and fast switching are required. Qualified to AEC Q101 Applications RoHS compliant Inverter Power suppliers D2 D2 D1 D1 G2 SO-8 S2 G1 S1 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V Drain Curr

5.2. fds89141.pdf Size:240K _fairchild_semi

December 2010 FDS89141 Dual N-Channel PowerTrench® MOSFET 100 V, 3.5 A, 62 m? Features General Description Max rDS(on) = 62 m? at VGS = 10 V, ID = 3.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 100 m? at VGS = 6 V, ID = 2.8 A been optimized for rDS(on), switching performance and High performance trench technology for extremely low rDS(on) ruggedness. High power and current handling capability in a widely used surface mount package Applications 100% UIL Tested Synchronous Rectifier RoHS Compliant Primary Switch For Bridge Topology D2 D2 G2 4 D2 5 D1 D1 D2 S2 6 Q2 3 Q2 G2 D1 G1 7 2 S2 Q1 Q1 G1 D1 8 1 S1 S1 Pin 1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V Drain Current -Continuous 3.5 ID A -Pulsed 18 EAS Single Pulse Avalanche Energy (N

5.3. fds8984_f085.pdf Size:440K _fairchild_semi

Fabruary 2010 FDS8984_F085 tm N-Channel PowerTrench® MOSFET 30V, 7A, 23m? General Description Features Max rDS(on) = 23m?, VGS = 10V, ID = 7A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m?, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge rDS(ON) and fast switching speed. 100% RG tested Qualified to AEC Q101 RoHS Compliant DD2 D2 D 5 4 D1 D D1 D Q2 6 3 G2 7 2 SO-8 S2 G G1 S Q1 8 1 S1 S Pin 1 SO-8 S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current Continuous (Note 1a) 7 A ID Pulsed 30 A EAS Single Pulse Avalache Energy (Note 2) 32 mJ Power Dissipation for Single Operation 1.6 W PD Derate above 25°C 13 mW/°C TJ, TSTG Operating and S

5.4. fds8928a.pdf Size:153K _fairchild_semi

July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power N-Channel 5.5 A,30 V, RDS(ON)=0.030 ? @ VGS=4.5 V field effect transistors are produced using Fairchild's RDS(ON)=0.038 ? @ VGS=2.5 V. proprietary, high cell density, DMOS technology. This very P-Channel -4 A,-20 V, RDS(ON)=0.055 ? @ VGS=-4.5 V high density process is especially tailored to minimize on-state resistance and provide superior switching RDS(ON)=0.072 ? @ VGS=-2.5 V. performance. These devices are particularly suited for low High density cell design for extremely low RDS(ON). voltage applications such as notebook computer power management and other battery powered circuits where fast High power and current handling capability in a widely used switching, low in-line power loss, and resistance to surface mount package. transients are needed. Dual (N & P-Channel) MOSFET in surface mount packag

5.5. fds8926a.pdf Size:69K _fairchild_semi

February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect 5.5 A, 30 V. RDS(ON) = 0.030 ? @ VGS = 4.5 V transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.038 ? @ VGS = 2.5 V. cell density, DMOS technology. This very high density process is especially tailored to provide superior switching High density cell design for extremely low RDS(ON). performance and minimize on-state resistance. These devices Combines low gate threshold (fully enhanced at 2.5V) with are particularly suited for low voltage applications such as disk high breakdown voltage of 30 V. drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients High power and current handling capability in a widely are needed. used surface mount package. Dual MOSFET in surface mount package. SOIC-16 SOT-23 SuperSOTTM-6 SuperSOTTM-8

5.6. fds8962c.pdf Size:674K _fairchild_semi

June 2006 FDS8962C Dual N & P-Channel PowerTrench® MOSFET Features General Description ¦ Q1: N-Channel These dual N- and P-Channel enhancement mode power field 7.0A, 30V RDS(on) = 0.030? @ VGS = 10V effect transistors are produced using Fairchild Semiconductor’s RDS(on) = 0.044? @ VGS = 4.5V advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain ¦ Q2: P-Channel superior switching performance. -5A, -30V RDS(on) = 0.052? @ VGS = -10V RDS(on) = 0.080? @ VGS = -4.5V These devices are well suited for low voltage and battery ¦ Fast switching speed powered applications where low in-line power loss and fast switching are required. ¦ High power and handling capability in a widely used surface mount package Q2 D2 5 4 D2 D1 6 3 D1 Q1 7 2 G2 SO-8 S2 8 1 G1 S1 Pin 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage 30 -30 V VGSS Gate-Source

5.7. fds8984.pdf Size:384K _fairchild_semi

May 2007 FDS8984 tm N-Channel PowerTrench® MOSFET 30V, 7A, 23m? General Description Features Max rDS(on) = 23m?, VGS = 10V, ID = 7A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m?, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge rDS(ON) and fast switching speed. 100% RG tested RoHS Compliant DD2 D2 D 5 4 D1 D D1 D Q2 6 3 G2 7 2 SO-8 S2 G G1 S Q1 8 1 S1 S Pin 1 SO-8 S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current Continuous (Note 1a) 7 A ID Pulsed 30 A EAS Single Pulse Avalache Energy (Note 2) 32 mJ Power Dissipation for Single Operation 1.6 W PD Derate above 25°C 13 mW/°C TJ, TSTG Operating and Storage Temperature -55 to 150 °C

5.8. fds8935.pdf Size:219K _fairchild_semi

November 2010 FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 m? Features General Description Max rDS(on) = 183 m? at VGS = -10 V, ID = -2.1 A This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 247 m? at VGS = -4.5 V, ID = -1.9 A been optimized for rDS(on), switching performance and ruggedness. High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Applications 100% UIL Tested Load Switch RoHS Compliant Synchronous Rectifier D2 D2 G2 D2 4 5 D1 5 4 D1 D2 S2 6 3 Q2 6 3 G2 D1 7 2 G1 7 2 S2 Q1 G1 8 1 D1 8 1 S1 S1 Pin 1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage -80 V VGS Gate to Source Voltage ±20 V Drain Current -Continuous -2.1 ID A -Pulsed -10 EAS Single Pulse Avalanche Energy (

5.9. fds8960c.pdf Size:159K _fairchild_semi

November 2005 FDS8960C Dual N & P-Channel PowerTrench® MOSFET General Description Features These dual N- and P-Channel enhancement mode • Q1: N-Channel power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench 7.0A, 35V RDS(on) = 0.024? @ VGS = 10V process that has been especially tailored to minimize RDS(on) = 0.032? @ VGS = 4.5V on-state ressitance and yet maintain superior switching performance. • Q2: P-Channel These devices are well suited for low voltage and –5A, –35V RDS(on) = 0.053? @ VGS = –10V battery powered applications where low in-line power loss and fast switching are required. RDS(on) = 0.087? @ VGS = –4.5V • Fast switching speed • RoHS compliant Q2 DD2 5 4 D2 D D1 D 6 3 D1 D Q1 7 2 G2 SO-8 S2 G 8 1 G1 S S1 S Pin 1 SO-8 S Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage 35 –35 V VDS(Avalanche) Drain-Sou

5.10. fds89161.pdf Size:260K _fairchild_semi

June 2011 FDS89161 Dual N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 105 m? Features General Description Max rDS(on) = 105 m? at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 171 m? at VGS = 6 V, ID = 2.1 A been optimized for rDS(on), switching performance and High performance trench technology for extremely low rDS(on) ruggedness. High power and current handling capability in a widely used surface mount package Applications 100% UIL Tested Synchronous Rectifier RoHS Compliant Primary Switch For Bridge Topology D2 D2 G2 4 D2 5 D1 D1 D2 S2 6 Q2 3 Q2 G2 D1 G1 7 2 S2 Q1 Q1 G1 D1 8 1 S1 S1 Pin 1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V Drain Current -Continuous 2.7 ID A -Pulsed 15 EAS Single Pulse Avalanche Energy (Not

5.11. fds8978.pdf Size:693K _fairchild_semi

January 2011 FDS8978 N-Channel PowerTrench® MOSFET 30V, 7.5A, 18m? Features General Description rDS(on) = 18m?, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 21m?, VGS = 4.5V, ID = 6.9A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low rDS(on) and fast switching speed. rDS(on) Applications Low gate charge DC/DC converters High power and current handling capability 100% Rg Tested RoHS Compliant D2 D2 D2 G2 5 4 D1 D1 D2 6 Q2 3 S2 SO-8 D1 7 2 G1 G2 S2 D1 S1 8 Q1 1 G1 S1 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 7.5 A Continuous (TA = 25oC, VGS = 10V, R?JA = 50oC/W) ID Continuous (TA = 25o

5.12. fds8934a.pdf Size:285K _fairchild_semi

May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -4 A , -20 V, RDS(ON) = 0.055 ? @ VGS = -4.5 V, transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.072 ? @ VGS = -2.5 V. cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance High density cell design for extremely low RDS(ON). and provide superior switching performance. These devices High power and current handling capability in a widely are particularly suited for low voltage applications such as used surface mount package. notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, Dual MOSFET in surface mount package. and resistance to transients are needed. SOIC-16 SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 D2 4 5 D2 D1 D1 6 3 7 2 G2 S2 G1 pin 1 8 1

5.13. fds8949.pdf Size:345K _fairchild_semi

October 2006 FDS8949 tm Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A, 29m? Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m? at VGS = 10V using Fairchild Semiconductor’s advanced Max rDS(on) = 36m? at VGS = 4.5V PowerTrench® process that has been especially tailored Low gate charge to minimize the on-state resistance and yet maintain superior switching performance. High performance trench technology for extremely low These devices are well suited for low voltage and rDS(on) battery powered applications where low in-line power High power and current handling capability loss and fast switching are required. RoHS compliant Applications Inverter Power suppliers D2 D2 D1 D1 G2 SO-8 S2 G1 S1 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (Note 1a) 6 I

See also transistors datasheet: FDS89161LZ , FDS8928A , FDS8928A , FDS8928A , FDS8935 , FDS8949 , FDS8949_F085 , FDS8958A_F085 , IRFBC40 , FDS8958A_F085 , FDS8958B , FDS8958B , FDS8958B , FDS8978 , FDS8978 , FDS8984 , FDS8984 .

Keywords