FDY4000CZ MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FDY4000CZ

Type of FDY4000CZ transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 20V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.6

Maximum junction temperature (Tj), °C:

Rise Time of FDY4000CZ transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.7

Package: SOT563F

Equivalent transistors for FDY4000CZ

FDY4000CZ PDF documents for downloads:

1.1. fdy4000cz.pdf Size:230K _fairchild_semi

November 2009 FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET Features General Description Q1: N-Channel This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Max rDS(on) 0.7 at VGS = 4.5V, ID = 600mA Trench® process to optimize the rDS(ON) @ VGS= 2.5V and Max rDS(on) 0.85 at VGS = 2.5V, ID = 500mA specify the rDS(ON) @ VGS = 1.8V. Max rDS(on) 1.25 at VGS = 1.8V, ID =150 mA Applications Q2: P-Channel Level shifting Max rDS(on) 1.2 at VGS = -4.5V, ID = -350mA Power Supply Converter Circuits Max rDS(on) 1.6 at VGS = -2.5V, ID = -300mA Max rDS(on) 2.7 at VGS = -1.8V, ID = -150mA Load/Power Switching Cell Phones, Pagers ESD protection diode (note 3) RoHS Compliant 6 5 S2 4 3 D2 4 G2 5 2 G1 1 D1 6 1 S1 2 3 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Q1 Q2 Units VDS Drain to Source Voltage 20 -20 V VGS Gate to Source Voltage ±12 ±8 V

See also transistors datasheet: FDY100PZ , FDY101PZ , FDY102PZ , FDY2000PZ , FDY3000NZ , FDY300NZ , FDY301NZ , FDY302NZ , IRFP460 , FDY4000CZ , FDZ1905PZ , FDZ191P , FDZ192NZ , FDZ193P , FDZ197PZ , FDZ371PZ , FDZ372NZ .

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