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FQA46N15 MOSFET (IC) Datasheet. Cross Reference Search. FQA46N15 Equivalent

Type Designator: FQA46N15

Type of FQA46N15 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 250

Maximum drain-source voltage |Uds|, V: 150

Maximum gate-source voltage |Ugs|, V: 25

Maximum drain current |Id|, A: 50

Maximum junction temperature (Tj), °C: 175

Rise Time of FQA46N15 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.042

Package: TO3PN

FQA46N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQA46N15 PDF doc:

1.1. fqa46n15.pdf Size:788K _fairchild_semi

FQA46N15
FQA46N15

August 2007 ® QFET FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET Features Description • 50A, 150V, RDS(on) = 0.042? @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 85 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 100pF) This advanced technology has been especially tailored to

See also transistors datasheet: FQA28N15 , FQA30N40 , SDF06N60 , FQA32N20C , SDF05N50 , FQA36P15 , FQA40N25 , FQA44N30 , IRFZ44A , FQA55N25 , FQA62N25C , FQA65N20 , SDF05N40T , FQA6N90C_F109 , FQA70N10 , SDF04N65 , FQA70N15 .

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