FQB34N20L MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FQB34N20L

Type of FQB34N20L transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 200V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 31.0

Maximum junction temperature (Tj), °C:

Rise Time of FQB34N20L transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.075

Package: TO263(D2PAK)

Equivalent transistors for FQB34N20L

FQB34N20L PDF documents for downloads:

1.1. fqb34n20l_fqi34n20l.pdf Size:1051K _fairchild_semi

October 2008 QFET® FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 31A, 200V, RDS(on) = 0.075? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 55 nC) planar stripe, DMOS technology. • Low Crss ( typical 52 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • Low level gate drive requirement allowing direct suited for high efficiency switching DC/DC converters, opration from logic drivers switch mode power supply, motor control. • RoHS Compliant D D G G S D2-PAK I2-PAK G D S FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB34N20L /

5.1. fqb34p10_fqi34p10.pdf Size:781K _fairchild_semi

® QFET FQB34P10 / FQI34P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -33.5A, -100V, RDS(on) = 0.06? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 85 nC) planar stripe, DMOS technology. • Low Crss ( typical 170 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. S D ? ? ? ? ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? ? ^ ? ^ ? ^ ? ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? I2-PAK D2-PAK G S FQI Series FQB Series G D S D Absolute Maxi

5.2. fqb34p10tm_f085.pdf Size:1062K _fairchild_semi

March 2009 TM QFET FQB34P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -33.5A, -100V, RDS(on) = 0.06? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 85 nC) planar stripe, DMOS technology. • Low Crss ( typical 170 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, • Qualified to AEC Q101 high efficiency switching DC/DC converters, and DC motor • RoHS Compliant control. S D ? ? ? ? ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? ? ^ ? ^ ? ^ ? ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? D2-PAK G S

See also transistors datasheet: FQB30N06L , FQB33N10 , FQB33N10 , FQB33N10L , FQB33N10L , FQB34N20 , FQB34N20 , FQB34N20L , 75339P , FQB34P10 , FQB34P10TM_F085 , FQB44N10 , FQB44N10 , FQB47P06 , FQB4N80 , FQB4N80 , FQB50N06 .

Keywords