FQB5N90 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FQB5N90

Type of FQB5N90 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 900V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5.4

Maximum junction temperature (Tj), °C:

Rise Time of FQB5N90 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 2.3

Package: TO263(D2PAK)

Equivalent transistors for FQB5N90

FQB5N90 PDF documents for downloads:

1.1. fqb5n90_fqi5n90.pdf Size:1072K _fairchild_semi

October 2008 QFET® FQB5N90 / FQI5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.4A, 900V, RDS(on) = 2.3 ? @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • RoHS Compliant suited for high efficiency switch mode power supply. D D G G S D2-PAK I2-PAK G D S FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB5N90 / FQI5N90 Units VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 5.4 A - Continuous (TC = 100°C) 3.42 A I

5.1. fqb5n60_fqi5n60.pdf Size:553K _fairchild_semi

April 2000 TM QFET QFET QFET QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.0A, 600V, RDS(on) = 2.0? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D D G G S D2-PAK I2-PAK G D S FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB5N60 / FQI5N60 Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 5.0 A - Continuous (TC = 100°C) 3.15 A

5.2. fqb5n50cf.pdf Size:700K _fairchild_semi

May 2006 TM FRFET FQB5N50CF 500V N-Channel MOSFET Features Description • 5A, 500V, RDS(on) = 1.55 ? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 18nC) DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- • Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and • 100% avalanche tested commutation mode. These devices are well suited for high effi- • Improved dv/dt capability ciency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D D G G S D2-PAK FQB Series S Absolute Maximum Ratings Symbol Parameter FQB5N50CF Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 5 A - Continuous (TC = 100°C) 3.2 A (Note 1) IDM Drain Current - Pulsed 20 A VGSS

5.3. fqb5n50c_fqi5n50c.pdf Size:945K _fairchild_semi

October 2008 QFET® FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • RoHS Compliant suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D D G I2-PAK D2-PAK G S FQI Series FQB Series G D S S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB5N50C/FQI5N50C Units VDSS Drain-Source Voltage 500 V

5.4. fqb5n20l_fqi5n20l.pdf Size:539K _fairchild_semi

December 2000 TM QFET QFET QFET QFET FQB5N20L / FQI5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology is especially tailored to minimize • Fast switching on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation modes. These devices are • Low level gate drive requirement allowing direct well suited for high efficiency switching DC/DC converters, operation from logic drivers switch mode power supplies, and motor control. D D G G S D2-PAK I2-PAK G D S FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB5N20L

5.5. fqb5n60c_fqi5n60c.pdf Size:655K _fairchild_semi

TM QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? I2-PAK D2-PAK G S FQI Series FQB Series G D S S Absolute Maximum Ratings TC = 25°C unl

See also transistors datasheet: FQB47P06 , FQB4N80 , FQB4N80 , FQB50N06 , FQB50N06L , FQB55N10 , FQB55N10 , FQB5N50C , IRF2807 , FQB6N80 , FQB6N80 , FQB7N60 , FQB7N60 , FQB7P20 , FQB7P20TM_F085 , FQB8N60C , FQB8N60C .

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