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FQD5P20 MOSFET (IC) Datasheet. Cross Reference Search. FQD5P20 Equivalent

Type Designator: FQD5P20

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd), W: 45

Maximum Drain-Source Voltage |Vds|, V: 200

Maximum Gate-Source Voltage |Vgs|, V: 30

Maximum Drain Current |Id|, A: 3.7

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 1.4

Package: TO252_DPAK

FQD5P20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQD5P20 PDF doc:

1.1. fqd5p20_fqu5p20.pdf Size:657K _fairchild_semi

FQD5P20
FQD5P20

October 2008 QFET® FQD5P20 / FQU5P20 200V P-Channel MOSFET Features General Description • -3.7A, -200V, RDS(on) = 1.4? @VGS = -10 V These P-Channel enhancement mode power field effect • Low gate charge ( typical 10 nC) transistors are produced using Fairchild’s proprietary, • Low Crss ( typical 12 pF) planar stripe, DMOS technology. • Fast switching This advanced technology has been e

5.1. fqd5p10_fqu5p10.pdf Size:705K _fairchild_semi

FQD5P20
FQD5P20

October 2008 QFET® FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -3.6A, -100V, RDS(on) = 1.05? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especially tailored

See also transistors datasheet: FQP11P06 , FQD4N25 , FQD4P25 , FQD5N20L , FQP12P10 , FQD5N60C , FDS4675 , FQD5P10 , 2N5485 , FQD6N25 , FQD6N40C , HUFA76419D_F085 , FQD6N50C , FQD7N10L , HUFA75645S3S , FQD7N20L , IRFS450B .

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