All MOSFET. FQP85N06 Datasheet

 

FQP85N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP85N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 85 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm

Package: TO220

FQP85N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQP85N06 PDF doc:

1.1. fqp85n06.pdf Size:647K _fairchild_semi

FQP85N06
FQP85N06

May 2001 TM QFET FQP85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 85A, 60V, RDS(on) = 0.010? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 86 nC) planar stripe, DMOS technology. • Low Crss ( typical 165 pF) This advanced technology has been especially tailored to • Fast swit

Datasheet: FQP6N80C , FQD4P25TM_WS , FQP6N90C , FQP70N10 , FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , IRFZ44N , FQP8N80C , FCPF11N60T , FQP8N90C , FQP8P10 , FQP9N30 , FQP9N90C , FQP9P25 , FQPF10N20C .

 


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