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FQP85N06 MOSFET (IC) Datasheet. Cross Reference Search. FQP85N06 Equivalent

Type Designator: FQP85N06

Type of FQP85N06 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 160

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 25

Maximum drain current |Id|, A: 85

Maximum junction temperature (Tj), °C: 175

Rise Time of FQP85N06 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.01

Package: TO220

FQP85N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP85N06 PDF doc:

1.1. fqp85n06.pdf Size:647K _fairchild_semi

FQP85N06
FQP85N06

May 2001 TM QFET FQP85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 85A, 60V, RDS(on) = 0.010? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 86 nC) planar stripe, DMOS technology. • Low Crss ( typical 165 pF) This advanced technology has been especially tailored to • Fast swit

See also transistors datasheet: FQP6N80C , FQD4P25TM_WS , FQP6N90C , FQP70N10 , FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , IRFZ44N , FQP8N80C , FCPF11N60T , FQP8N90C , FQP8P10 , FQP9N30 , FQP9N90C , FQP9P25 , FQPF10N20C .

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