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FQP9P25 MOSFET (IC) Datasheet. Cross Reference Search. FQP9P25 Equivalent

Type Designator: FQP9P25

Type of FQP9P25 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 120

Maximum drain-source voltage |Uds|, V: 250

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 9.4

Maximum junction temperature (Tj), °C: 150

Rise Time of FQP9P25 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.62

Package: TO220

FQP9P25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQP9P25 PDF doc:

1.1. fqp9p25.pdf Size:563K _fairchild_semi

FQP9P25
FQP9P25

December 2000 TM QFET QFET QFET QFET FQP9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -9.4A, -250V, RDS(on) = 0.62? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 29 nC) planar stripe, DMOS technology. • Low Crss ( typical 27 pF) This advanced technology is especially tail

See also transistors datasheet: FQP7P06 , FQP85N06 , FQP8N80C , FCPF11N60T , FQP8N90C , FQP8P10 , FQP9N30 , FQP9N90C , IRF540N , FQPF10N20C , FDP39N20 , FQPF10N50CF , FQPF11N40C , FDU6N50 , FQPF11N50CF , FQPF11P06 , FQPF13N06L .

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 FQP9P25 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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