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FQP9P25 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP9P25

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 9.4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.62 Ohm

Package: TO220

FQP9P25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQP9P25 PDF doc:

1.1. fqp9p25.pdf Size:563K _fairchild_semi

FQP9P25
FQP9P25

December 2000 TM QFET QFET QFET QFET FQP9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -9.4A, -250V, RDS(on) = 0.62? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 29 nC) planar stripe, DMOS technology. • Low Crss ( typical 27 pF) This advanced technology is especially tail

Datasheet: FQP7P06 , FQP85N06 , FQP8N80C , FCPF11N60T , FQP8N90C , FQP8P10 , FQP9N30 , FQP9N90C , IRF540N , FQPF10N20C , FDP39N20 , FQPF10N50CF , FQPF11N40C , FDU6N50 , FQPF11N50CF , FQPF11P06 , FQPF13N06L .

 


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