MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
FQPF33N10
  FQPF33N10
  FQPF33N10
 
FQPF33N10
  FQPF33N10
  FQPF33N10
 
FQPF33N10
  FQPF33N10
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AP0503GMT-HF
AP0504GH-HF ..AP2533GY-HF
AP2535GEY-HF ..AP4453GYT-HF
AP4455GEH-HF ..AP73T03GJ-HF
AP73T03GMT-HF ..AP9575GS-HF
AP9576GH ..AP9T18GEH
AP9T18GEJ ..ATP103
ATP104 ..AUIRFSL3004
AUIRFSL3107 ..BF996S
BF996SR ..BLF871
BLF871S ..BSN20
BSN254 ..BUK426-1000B
BUK436W-1000B ..BUK7624-55
BUK7624-55A ..BUK9MHH-65PNN
BUK9MJJ-55PSS ..CEB3205
CEB35P10 ..CEM3138
CEM3172 ..CEU02N7G-1
CEU02N9 ..DMN3033LSN
DMN3051L ..FCA76N60N
FCA76N60N ..FDC3612
FDC3612 ..FDG327NZ
FDG328P ..FDMS6673BZ
FDMS6681Z ..FDP7N50
FDP7N60NZ ..FDS6982
FDS6982AS ..FMD47-06KC5
FMD47-06KC5 ..FQP13N10L
FQP13N50 ..FRE9160R
FRE9260D ..FSL9130D
FSL9130R ..H7N0401LM
H7N0401LS ..HAT2192WP
HAT2193WP ..HUF76137S3S
HUF76139P3 ..IPB160N04S2-03
IPB160N04S2L-03 ..IPD65R380C6
IPD65R380E6 ..IPP08CN10LG
IPP08CN10NG ..IRC244
IRC250 ..IRF430
IRF440 ..IRF6810S
IRF6811S ..IRF7807
IRF7807A ..IRFB3607
IRFB3607G ..IRFI550A
IRFI610A ..IRFP4227
IRFP4229 ..IRFS243
IRFS244A ..IRFSL4410
IRFSL4410Z ..IRFZ44N
IRFZ44NL ..IRLML2060
IRLML2244 ..IXFA10N80P
IXFA110N15T2 ..IXFH6N100
IXFH6N100F ..IXFN150N15
IXFN160N30T ..IXFR90N30
IXFT10N100 ..IXFX66N50Q2
IXFX73N30Q ..IXTF230N085T
IXTF250N075T ..IXTK21N100
IXTK22N100L ..IXTP76N25T
IXTP76P10T ..IXTV270N055T2S
IXTV280N055T ..KF7N80F
KF80N08F ..KP740V
KP741A ..MMBF5458
MMBF5459 ..MTDN3018S6R
MTDN3154C6 ..MTN7000ZA3
MTN7000ZHA3 ..NDF08N60Z
NDF10N60Z ..NTHD3100C
NTHD3101F ..PHB191NQ06LT
PHB20N06T ..PMN40LN
PMN45EN ..PSMN9R0-25YLC
PSMN9R0-30LL ..RFP15P05SM
RFP15P06 ..RJK4006DPD
RJK4006DPP-M0 ..RT1E060XN
RTF015N03 ..SDF9240
SDF9N100GAF-D ..SI2305
SI2312 ..SML1004RKN
SML100A9 ..SMN0470F
SMN04L20D ..SSD20N06-90D
SSD20N10-130D ..SSM3J108TU
SSM3J109TU ..SSM6N05FU
SSM6N09FU ..STB150NF04
STB150NF55 ..STD3LN62K3
STD3N25-1 ..STF3LN62K3
STF3N62K3 ..STL65DN3LLH5
STL65N3LLH5 ..STP3LN62K3
STP3N100 ..STP9NK70ZFP
STP9NK90Z ..STW47NM60ND
STW48NM60N ..TK30J25D
TK30S06K3L ..TPC8105-H
TPC8107 ..TPCP8204
TPCP8205-H ..UTT100N08
UTT100P03 ..ZXMC10A816N8
ZXMC3A16DN8 ..ZXMS6006SG
 
FQPF33N10 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

FQPF33N10 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FQPF33N10

Type of FQPF33N10 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 18.0

Maximum junction temperature (Tj), °C:

Rise Time of FQPF33N10 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.052

Package: TO220F

Equivalent transistors for FQPF33N10

FQPF33N10 PDF doc:

1.1. fqpf33n10l.pdf Size:657K _fairchild_semi

FQPF33N10
FQPF33N10
September 2000 TM QFET QFET QFET QFET FQPF33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 100V, RDS(on) = 0.052? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 70 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF33N10L Units VDSS Drain-Source Voltage 100 V ID Drain Curre

1.2. fqpf33n10.pdf Size:591K _fairchild_semi

FQPF33N10
FQPF33N10
April 2000 TM QFET QFET QFET QFET FQPF33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 100V, RDS(on) = 0.052? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar stripe, DMOS technology. • Low Crss ( typical 62 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF33N10 Units VDSS Drain-Source Voltage 100 V ID D

5.1. fqpf30n06l.pdf Size:653K _fairchild_semi

FQPF33N10
FQPF33N10
May 2001 TM QFET FQPF30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 22.5A, 60V, RDS(on) = 0.035? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 50 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF30N06L Units VDSS Drain-S

5.2. fqp3n80c_fqpf3n80c.pdf Size:810K _fairchild_semi

FQPF33N10
FQPF33N10
TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 800V, RDS(on) = 4.8? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP3N80C FQPF3N80C Units VDSS Drain-Source Voltage 8

5.3. fqp32n20c_fqpf32n20c.pdf Size:1208K _fairchild_semi

FQPF33N10
FQPF33N10
® QFET FQP32N20C/FQPF32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 28A, 200V, RDS(on) = 0.082? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 82.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 185 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D ? ? ? ? ^ ^ ? ? G ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP32N20C FQPF32N20C Unit

5.4. fqp3n50c_fqpf3n50c.pdf Size:1269K _fairchild_semi

FQPF33N10
FQPF33N10
® QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description • 3 A, 500 V, RDS(on) = 2.5 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 10 nC ) DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to mini- • Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and • 100 % avalanche tested commutation mode. These devices are well suited for high effi- • Improved dv/dt capability ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF

See also transistors datasheet: FQPF2N60C , FQPF2N60C , FQPF2N70 , FQPF2N80 , FQPF2N80 , FQPF30N06L , FQPF32N20C , FQPF32N20C , CEP83A3 , FQPF33N10 , FQPF33N10L , FQPF33N10L , FQPF3N80C , FQPF3N80C , FQPF45N15V2 , FQPF47P06 , FQPF4N90C .

Keywords

 FQPF33N10 Datasheet  FQPF33N10 Datenblatt  FQPF33N10 RoHS  FQPF33N10 Distributor
 FQPF33N10 Application Notes  FQPF33N10 Component  FQPF33N10 Circuit  FQPF33N10 Schematic
 FQPF33N10 Equivalent  FQPF33N10 Cross Reference  FQPF33N10 Data Sheet  FQPF33N10 Fiche Technique

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