MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
FQPF33N10
  FQPF33N10
  FQPF33N10
 
FQPF33N10
  FQPF33N10
  FQPF33N10
 
FQPF33N10
  FQPF33N10
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP03N70I-H
AP03N70I-HF ..AP2326GN-HF
AP2327GN-HF ..AP4432GM
AP4433GM-HF ..AP70L02GH
AP70L02GJ ..AP9565BGM-HF
AP9565GEH ..AP9992GP-A-HF
AP9992GP-HF ..APT60M90JN
APT8015JVFR ..AUIRFR9024N
AUIRFS3004 ..BF961
BF963 ..BLF7G22L-200
BLF7G22L-250P ..BSC900N20NS3G
BSD223P ..BUK104-50SP
BUK106-50L ..BUK7606-55B
BUK7606-75B ..BUK9675-55A
BUK9775-55 ..CEB12N5
CEB12N6 ..CEK01N6G
CEK01N7 ..CES2323
CES2324 ..DMN2114SN
DMN2170U ..F5031
F5032 ..FDB8832
FDB8832_F085 ..FDD8870_F085
FDD8874 ..FDMS2502SDC
FDMS2504SDC ..FDP42AN15A0
FDP51N25 ..FDS6690A
FDS6690AS ..FK25SM-6
FK30SM-5 ..FQI4N90
FQI50N06 ..FQU2N60C
FQU2N90TU_AM002 ..FSJ260R
FSJ264D ..H5N5016PL
H5N6001P ..HAT2167N
HAT2168H ..HUF75652G3
HUF75842P3 ..IPB100N04S2-04
IPB100N04S2L-03 ..IPD50N06S4-09
IPD50N06S4L-08 ..IPP04N03LBG
IPP052N06L3G ..IPW60R199CP
IPW60R250CP ..IRF3709Z
IRF3709ZCS ..IRF6711S
IRF6712S ..IRF7704G
IRF7705 ..IRF9Z35
IRFB11N50A ..IRFI1010N
IRFI1310N ..IRFP3306
IRFP331 ..IRFS11N50A
IRFS130 ..IRFS9641
IRFS9642 ..IRFZ22
IRFZ22FI ..IRLIZ24N
IRLIZ34A ..ITF86116SQT
ITF86130SK8T ..IXFH40N30Q
IXFH40N50Q ..IXFM40N30
IXFM42N20 ..IXFR38N80Q2
IXFR40N50Q2 ..IXFX360N15T2
IXFX38N80Q2 ..IXTC110N25T
IXTC13N50 ..IXTH90P10P
IXTH96N20P ..IXTP4N60P
IXTP4N80P ..IXTU1R4N60P
IXTU2N80P ..KF5N53DS
KF5N53F ..KP7173A
KP723A ..MKE11R600DCGFC
MKE11R600DCGFC ..MTC4506Q8
MTC5806Q8 ..MTN4N60J3
MTN4N65FP ..NDC631N
NDC632P ..NTD6416AN
NTD6416ANL ..NX3008PBK
NX3008PBKS ..PMG370XN
PMG85XP ..PSMN5R6-100XS
PSMN5R8-30LL ..RFG40N10LE
RFG45N06 ..RJK1526DPF
RJK1526DPJ ..RSJ250P10
RSJ300N10 ..SDF460JED
SDF4N100JAA ..SGSP381
SGSP382 ..SML1001R1AN
SML1001R1BN ..SML802R8KN
SML8030CFN ..SPW11N80C3
SPW12N50C3 ..SSH9N90A
SSI1N50A ..SSM6K30FE
SSM6K31FE ..STB100NF03L-03
STB100NF04 ..STD25NF10LA
STD26NF10 ..STF20NF20
STF20NK50Z ..STL150N3LLH6
STL15DN4F5 ..STP30NF20
STP30NM30N ..STP8NK80Z
STP8NK80ZFP ..STW25N95K3
STW25NM60ND ..TK19J55D
TK1P90A ..TPC8058-H
TPC8059-H ..TPCL4202
TPCL4203 ..UT9564
UT9971P ..ZVP3306F
ZVP3310A ..ZXMS6006SG
 
FQPF33N10 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

FQPF33N10 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FQPF33N10

Type of FQPF33N10 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 18.0

Maximum junction temperature (Tj), °C:

Rise Time of FQPF33N10 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.052

Package: TO220F

Equivalent transistors for FQPF33N10

FQPF33N10 PDF doc:

1.1. fqpf33n10l.pdf Size:657K _fairchild_semi

FQPF33N10
FQPF33N10
September 2000 TM QFET QFET QFET QFET FQPF33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 100V, RDS(on) = 0.052? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 70 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF33N10L Units VDSS Drain-Source Voltage 100 V ID Drain Curre

1.2. fqpf33n10.pdf Size:591K _fairchild_semi

FQPF33N10
FQPF33N10
April 2000 TM QFET QFET QFET QFET FQPF33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 100V, RDS(on) = 0.052? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar stripe, DMOS technology. • Low Crss ( typical 62 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF33N10 Units VDSS Drain-Source Voltage 100 V ID D

5.1. fqpf30n06l.pdf Size:653K _fairchild_semi

FQPF33N10
FQPF33N10
May 2001 TM QFET FQPF30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 22.5A, 60V, RDS(on) = 0.035? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 50 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF30N06L Units VDSS Drain-S

5.2. fqp3n80c_fqpf3n80c.pdf Size:810K _fairchild_semi

FQPF33N10
FQPF33N10
TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 800V, RDS(on) = 4.8? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP3N80C FQPF3N80C Units VDSS Drain-Source Voltage 8

5.3. fqp32n20c_fqpf32n20c.pdf Size:1208K _fairchild_semi

FQPF33N10
FQPF33N10
® QFET FQP32N20C/FQPF32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 28A, 200V, RDS(on) = 0.082? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 82.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 185 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D ? ? ? ? ^ ^ ? ? G ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP32N20C FQPF32N20C Unit

5.4. fqp3n50c_fqpf3n50c.pdf Size:1269K _fairchild_semi

FQPF33N10
FQPF33N10
® QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description • 3 A, 500 V, RDS(on) = 2.5 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 10 nC ) DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to mini- • Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and • 100 % avalanche tested commutation mode. These devices are well suited for high effi- • Improved dv/dt capability ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF

See also transistors datasheet: FQPF2N60C , FQPF2N60C , FQPF2N70 , FQPF2N80 , FQPF2N80 , FQPF30N06L , FQPF32N20C , FQPF32N20C , CEP83A3 , FQPF33N10 , FQPF33N10L , FQPF33N10L , FQPF3N80C , FQPF3N80C , FQPF45N15V2 , FQPF47P06 , FQPF4N90C .

Keywords

 FQPF33N10 Datasheet  FQPF33N10 Datenblatt  FQPF33N10 RoHS  FQPF33N10 Distributor
 FQPF33N10 Application Notes  FQPF33N10 Component  FQPF33N10 Circuit  FQPF33N10 Schematic
 FQPF33N10 Equivalent  FQPF33N10 Cross Reference  FQPF33N10 Data Sheet  FQPF33N10 Fiche Technique

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