MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
FQPF33N10
  FQPF33N10
  FQPF33N10
 
FQPF33N10
  FQPF33N10
  FQPF33N10
 
FQPF33N10
  FQPF33N10
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3141
2SK3141-01 ..2SK3668
2SK3669 ..2SK523
2SK525 ..3N60K
3N60Z ..5N80
5N90 ..AP10N70W
AP10P10GH-HF ..AP2R803GH-HF
AP2R803GMT-HF ..AP4543GEH-HF
AP4543GEM-HF ..AP92T12GP-HF
AP92U03GH-HF ..AP98T07GP-HF
AP9918GJ ..APT10M11JVR
APT10M11LVR ..AUIRF3007
AUIRF3205 ..AUIRLR2908
AUIRLR3105 ..BLD6G22LS-50
BLF1043 ..BS170F
BS170P ..BSP75G
BSP75N ..BUK6510-75C
BUK652R0-30C ..BUK9107-55ATE
BUK9120-48TC ..BUZ41A
BUZ42 ..CED12N10L
CED12P10 ..CEP01N65
CEP01N6G ..CEUF640
CEV2306 ..DMP2066LSD
DMP2066LSN ..FCPF22N60NT
FCPF22N60NT ..FDD13AN06A0_F085
FDD14AN06LA0_F085 ..FDMA1032CZ
FDMA1032CZ ..FDMS86103L
FDMS86103L ..FDPF5N50NZF
FDPF5N50NZU ..FDS8958A_F085
FDS8958A_F085 ..FQB19N20L
FQB19N20L ..FQP8N80C
FQP8N80C ..FRL9130H
FRL9130R ..GWM120-0075X1-SL
GWM120-0075X1-SL ..HAT1040T
HAT1041T ..HAT3038R
HAT3040R ..IPA030N10N3G
IPA032N06N3G ..IPB80N03S4L-02
IPB80N03S4L-03 ..IPI100N04S3-03
IPI100N04S4-H2 ..IPP60R160C6
IPP60R165CP ..IRF1010EZL
IRF1010EZS ..IRF5806
IRF5810 ..IRF7321D2
IRF7322D1 ..IRF840A
IRF840A ..IRFBF20S
IRFBF30 ..IRFL014
IRFL014N ..IRFPE40
IRFPE50 ..IRFS453
IRFS4610 ..IRFU2405
IRFU2407 ..IRL3502S
IRL3705N ..IRLR8113
IRLR8256 ..IXFE39N90
IXFE44N50Q ..IXFK21N100F
IXFK21N100Q ..IXFN48N50
IXFN48N50Q ..IXFT68N20
IXFT69N30P ..IXTA140N055T2
IXTA140P05T ..IXTH20N60
IXTH20N60MA ..IXTN600N04T2
IXTN60N50L2 ..IXTQ32P20T
IXTQ36N30P ..IXTZ24N50MA
IXTZ24N50MB ..KHB9D0N90P1
KHB9D5N20D ..KTJ6131E
KTJ6131V ..NCV8402D
NCV8403 ..NTD4805N
NTD4806N ..NTTFS4932N
NTTFS4937N ..PHX3N40E
PHX3N50E ..PSMN2R0-60ES
PSMN2R0-60PS ..RFD12N06RLESM
RFD14N05 ..RJK0455DPB
RJK0456DPB ..RQK0606KGDQA
RQK0607AQDQS ..SDF1NA60JAA
SDF1NA60JAB ..SFW9610
SFW9614 ..SMK0825FZ
SMK0850F ..SML6045BN
SML6045HN ..SPP08N50C3
SPP08N80C3 ..SSH20N45
SSH20N45A ..SSM5P05FU
SSM5P15FU ..SSS5N90A
SSS6N55 ..STD13NM60N
STD14NM50N ..STE50N40
STE53NA50 ..STK12N05L
STK12N06L ..STP20NM60
STP20NM60FD ..STP75N3LLH6
STP75NF20 ..STW12N60
STW12NA50 ..TK12X60U
TK130F06K3 ..TPC8010-H
TPC8012-H ..TPCC8006-H
TPCC8007 ..UT3P06
UT40N03 ..ZVN3310A
ZVN3310F ..ZXMS6006SG
 
FQPF33N10 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

FQPF33N10 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FQPF33N10

Type of FQPF33N10 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 18.0

Maximum junction temperature (Tj), °C:

Rise Time of FQPF33N10 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.052

Package: TO220F

Equivalent transistors for FQPF33N10

FQPF33N10 PDF doc:

1.1. fqpf33n10l.pdf Size:657K _fairchild_semi

FQPF33N10
FQPF33N10
September 2000 TM QFET QFET QFET QFET FQPF33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 100V, RDS(on) = 0.052? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 70 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF33N10L Units VDSS Drain-Source Voltage 100 V ID Drain Curre

1.2. fqpf33n10.pdf Size:591K _fairchild_semi

FQPF33N10
FQPF33N10
April 2000 TM QFET QFET QFET QFET FQPF33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 100V, RDS(on) = 0.052? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar stripe, DMOS technology. • Low Crss ( typical 62 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF33N10 Units VDSS Drain-Source Voltage 100 V ID D

5.1. fqp3n80c_fqpf3n80c.pdf Size:810K _fairchild_semi

FQPF33N10
FQPF33N10
TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 800V, RDS(on) = 4.8? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP3N80C FQPF3N80C Units VDSS Drain-Source Voltage 8

5.2. fqpf30n06l.pdf Size:653K _fairchild_semi

FQPF33N10
FQPF33N10
May 2001 TM QFET FQPF30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 22.5A, 60V, RDS(on) = 0.035? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 50 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF30N06L Units VDSS Drain-S

5.3. fqp32n20c_fqpf32n20c.pdf Size:1208K _fairchild_semi

FQPF33N10
FQPF33N10
® QFET FQP32N20C/FQPF32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 28A, 200V, RDS(on) = 0.082? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 82.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 185 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D ? ? ? ? ^ ^ ? ? G ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP32N20C FQPF32N20C Unit

5.4. fqp3n50c_fqpf3n50c.pdf Size:1269K _fairchild_semi

FQPF33N10
FQPF33N10
® QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description • 3 A, 500 V, RDS(on) = 2.5 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 10 nC ) DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to mini- • Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and • 100 % avalanche tested commutation mode. These devices are well suited for high effi- • Improved dv/dt capability ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF

See also transistors datasheet: FQPF2N60C , FQPF2N60C , FQPF2N70 , FQPF2N80 , FQPF2N80 , FQPF30N06L , FQPF32N20C , FQPF32N20C , CEP83A3 , FQPF33N10 , FQPF33N10L , FQPF33N10L , FQPF3N80C , FQPF3N80C , FQPF45N15V2 , FQPF47P06 , FQPF4N90C .

Keywords

 FQPF33N10 Datasheet  FQPF33N10 Datenblatt  FQPF33N10 RoHS  FQPF33N10 Distributor
 FQPF33N10 Application Notes  FQPF33N10 Component  FQPF33N10 Circuit  FQPF33N10 Schematic
 FQPF33N10 Equivalent  FQPF33N10 Cross Reference  FQPF33N10 Data Sheet  FQPF33N10 Fiche Technique

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