MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
FQPF33N10
  FQPF33N10
  FQPF33N10
 
FQPF33N10
  FQPF33N10
  FQPF33N10
 
FQPF33N10
  FQPF33N10
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB110N15A
FDB120N10 ..FDD8445
FDD8445_F085 ..FDMS7670AS
FDMS7672 ..FDS2670
FDS2672 ..FK14VS-9
FK16KM-5 ..FQP10N20C
FQP10N50CF ..FRE260R
FRE264D ..FSL234R
FSL23A4D ..H7N0310LS
H7N0311LD ..HAT2175N
HAT2179R ..HUF76129D3
HUF76129D3S ..IPB120N04S3-02
IPB120N04S4-01 ..IPD60R385CP
IPD60R3K3C6 ..IPP06CN10NG
IPP070N06LG ..IPW90R340C3
IPW90R500C3 ..IRF3710ZG
IRF3710ZL ..IRF6717M
IRF6718L2 ..IRF7739
IRF7749L2 ..IRFB3006
IRFB3006G ..IRFI4020H-117P
IRFI4024H-117P ..IRFP342
IRFP343 ..IRFS142
IRFS143 ..IRFSL3006
IRFSL3107 ..IRFZ24NL
IRFZ24NS ..IRLIZ44G
IRLIZ44N ..ITF87008DQT
ITF87012SVT ..IXFH42N60P3
IXFH44N50P ..IXFM6N90
IXFM75N10 ..IXFR44N60
IXFR44N80P ..IXFX44N50Q
IXFX44N60 ..IXTC200N075T
IXTC200N085T ..IXTK100N25P
IXTK102N30P ..IXTP50N25T
IXTP50N28T ..IXTV03N400S
IXTV102N20T ..KF5N60FZ
KF5N60I ..KP723V
KP726A ..MMBF170
MMBF170L ..MTC8958Q8
MTD06N04Q8 ..MTN4N65J3
MTN4N70I3 ..NDC652P
NDC7001C ..NTD6416ANL
NTD70N03R ..NX3008PBKS
NX3008PBKT ..PMG85XP
PMGD280UN ..PSMN5R8-30LL
PSMN5R8-40YS ..RFG45N06
RFG45N06LE ..RJK1526DPJ
RJK1529DPK ..RSJ300N10
RSJ400N06 ..SDF250JAA
SDF250JAB ..SFW9620
SFW9624 ..SMK0460IS
SMK0460P ..SML601R3KN
SML601R6AN ..SPD07N20G
SPD07N60C3 ..SSG4503
SSG4505 ..SSM3K15F
SSM3K15FS ..SSP7438N
SSP7440N ..STB6NK60Z-1
STB6NK90Z ..STD628S
STD65N3LLH5 ..STG8211
STG8810 ..STM4437A
STM4439A ..STP21N06LFI
STP21N65M5 ..STP70N10F4
STP70NF03L ..STT3599C
STT3810N ..STW12NK60Z
STW12NK80Z ..TK14A45DA
TK14A55D ..TPC8029
TPC8030 ..TPCC8093
TPCC8102 ..UT4800
UT4812 ..ZVN4310A
ZVN4310G ..ZXMS6006SG
 
FQPF33N10 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

FQPF33N10 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FQPF33N10

Type of FQPF33N10 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 18

Maximum junction temperature (Tj), °C:

Rise Time of FQPF33N10 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.052

Package: TO220F

Equivalent transistors for FQPF33N10

FQPF33N10 PDF doc:

1.1. fqpf33n10l.pdf Size:657K _fairchild_semi

FQPF33N10
FQPF33N10
September 2000 TM QFET QFET QFET QFET FQPF33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 100V, RDS(on) = 0.052? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 70 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF33N10L Units VDSS Drain-Source Voltage 100 V ID Drain Curre

1.2. fqpf33n10.pdf Size:591K _fairchild_semi

FQPF33N10
FQPF33N10
April 2000 TM QFET QFET QFET QFET FQPF33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 100V, RDS(on) = 0.052? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar stripe, DMOS technology. • Low Crss ( typical 62 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF33N10 Units VDSS Drain-Source Voltage 100 V ID D

5.1. fqpf3n25.pdf Size:724K _fairchild_semi

FQPF33N10
FQPF33N10
November 2013 FQPF3N25 N-Channel QFET® MOSFET 250 V, 2.3 A, 2.2 Ω Description Features These N-Channel enhancement mode power field effect 2.3 A, 250 V, RDS(on) = 2.2 Ω (Max.) @ VGS = 10 V, • transistors are produced using Fairchild’s proprietary, ID = 1.15 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 4.0 nC) technology has been especially tailored to minimize on- • Low Crss (Typ. 4.7 pF) state resistance, provide superior switching performance, • 100% Avalanche Tested and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply. D G G DS TO-220F S o Absolute Maximum Ratings TC = 25 C unless otherwise noted. Symbol Parameter FQPF3N25 Unit VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 2.3 A - Continuous (TC = 100°C) 1.45 A IDM (Note 1) 9.2 A Drain Current - Pulsed

5.2. fqpf30n06l.pdf Size:653K _fairchild_semi

FQPF33N10
FQPF33N10
May 2001 TM QFET FQPF30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 22.5A, 60V, RDS(on) = 0.035? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 50 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF30N06L Units VDSS Drain-S

5.3. fqp3n80c_fqpf3n80c.pdf Size:810K _fairchild_semi

FQPF33N10
FQPF33N10
TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 800V, RDS(on) = 4.8? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP3N80C FQPF3N80C Units VDSS Drain-Source Voltage 8

5.4. fqp32n20c_fqpf32n20c.pdf Size:1208K _fairchild_semi

FQPF33N10
FQPF33N10
® QFET FQP32N20C/FQPF32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 28A, 200V, RDS(on) = 0.082? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 82.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 185 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D ? ? ? ? ^ ^ ? ? G ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP32N20C FQPF32N20C Unit

5.5. fqp3n50c_fqpf3n50c.pdf Size:1269K _fairchild_semi

FQPF33N10
FQPF33N10
® QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description • 3 A, 500 V, RDS(on) = 2.5 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 10 nC ) DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to mini- • Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and • 100 % avalanche tested commutation mode. These devices are well suited for high effi- • Improved dv/dt capability ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF

See also transistors datasheet: FQPF2N60C , FQPF2N60C , FQPF2N70 , FQPF2N80 , FQPF2N80 , FQPF30N06L , FQPF32N20C , FQPF32N20C , CEP83A3 , FQPF33N10 , FQPF33N10L , FQPF33N10L , FQPF3N80C , FQPF3N80C , FQPF45N15V2 , FQPF47P06 , FQPF4N90C .

Keywords

 FQPF33N10 Datasheet  FQPF33N10 Datenblatt  FQPF33N10 RoHS  FQPF33N10 Distributor
 FQPF33N10 Application Notes  FQPF33N10 Component  FQPF33N10 Circuit  FQPF33N10 Schematic
 FQPF33N10 Equivalent  FQPF33N10 Cross Reference  FQPF33N10 Data Sheet  FQPF33N10 Fiche Technique

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