MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
FQPF33N10
  FQPF33N10
  FQPF33N10
 
FQPF33N10
  FQPF33N10
  FQPF33N10
 
FQPF33N10
  FQPF33N10
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF36N60N
FCPF380N60 ..FDD1600N10ALZ
FDD1600N10ALZD ..FDMA8051L
FDMA86265P ..FDMS8460
FDMS8558S ..FDPF18N20FT_G
FDPF18N50 ..FDT86102LZ
FDT86106LZ ..FQD13N06L
FQD13N10 ..FQT4N25
FQT5P10 ..FSF250R
FSF254D ..H5N6001P
H6968CTS ..HAT2168H
HAT2168N ..HUF75852G3
HUF75852G3_F085 ..IPB083N10N3G
IPB08CNE8NG ..IPD50N04S4-08
IPD50N04S4-10 ..IPP041N12N3G
IPP042N03LG ..IPW60R125C6
IPW60R125CP ..IRF3705
IRF3707Z ..IRF6648
IRF6655 ..IRF7601
IRF7603 ..IRF9Z24N
IRF9Z24NL ..IRFH8334
IRFH8337 ..IRFP254A
IRFP255 ..IRFR9120
IRFR9120N ..IRFS9541
IRFS9542 ..IRFY9120C
IRFY9130 ..IRLI540A
IRLI540N ..IRLZ34NS
IRLZ40 ..IXFH30N50Q3
IXFH30N60P ..IXFM10N90
IXFM11N80 ..IXFR26N50
IXFR26N50Q ..IXFX26N90
IXFX27N80Q ..IXTA86N20T
IXTA88N085T ..IXTH6N90A
IXTH72N20 ..IXTP3N100P
IXTP3N110 ..IXTT82N25P
IXTT88N15 ..KF4N65P
KF4N80F ..KP505G
KP505V ..MCH6604
MCH6613 ..MTC2590V8
MTC2804Q8 ..MTN3N65FP
MTN40N03I3 ..NDB608A
NDB610A ..NTD5804N
NTD5805N ..NVTFS5820NL
NVTFS5826NL ..PMDPB65UP
PMF170XP ..PSMN4R4-80PS
PSMN4R5-30YLC ..RFD8P05SM
RFD8P06E ..RJK1054DPB
RJK1055DPB ..RSD200N10
RSE002N06 ..SDF20N60JEA
SDF20N60JEB ..SFU9214
SFU9220 ..SMK0170
SMK0170I ..SML50T47
SML50W40 ..SPD04N60C3
SPD04N60S5 ..SSG4480N
SSG4490N ..SSM3K131TU
SSM3K14T ..SSP7411P
SSP7421P ..STB5NK50Z
STB60N55F3 ..STD60N3LH5
STD60N55F3 ..STFW3N150
STFW4N150 ..STM122N
STM201N ..STP20NM60FD
STP20NM60FP ..STP6NA60FI
STP6NA80 ..STT3458N
STT3463P ..STW11NK100Z
STW11NK90Z ..TK13A65D
TK13A65U ..TPC8021-H
TPC8022-H ..TPCC8066-H
TPCC8067-H ..UT4411
UT4413 ..ZVN4206GV
ZVN4210A ..ZXMS6006SG
 
FQPF33N10 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

FQPF33N10 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FQPF33N10

Type of FQPF33N10 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 18

Maximum junction temperature (Tj), °C:

Rise Time of FQPF33N10 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.052

Package: TO220F

Equivalent transistors for FQPF33N10

FQPF33N10 PDF doc:

1.1. fqpf33n10l.pdf Size:657K _fairchild_semi

FQPF33N10
FQPF33N10
September 2000 TM QFET QFET QFET QFET FQPF33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 100V, RDS(on) = 0.052? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 70 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF33N10L Units VDSS Drain-Source Voltage 100 V ID Drain Curre

1.2. fqpf33n10.pdf Size:591K _fairchild_semi

FQPF33N10
FQPF33N10
April 2000 TM QFET QFET QFET QFET FQPF33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 100V, RDS(on) = 0.052? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar stripe, DMOS technology. • Low Crss ( typical 62 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF33N10 Units VDSS Drain-Source Voltage 100 V ID D

5.1. fqpf3n25.pdf Size:724K _fairchild_semi

FQPF33N10
FQPF33N10
November 2013 FQPF3N25 N-Channel QFET® MOSFET 250 V, 2.3 A, 2.2 Ω Description Features These N-Channel enhancement mode power field effect 2.3 A, 250 V, RDS(on) = 2.2 Ω (Max.) @ VGS = 10 V, • transistors are produced using Fairchild’s proprietary, ID = 1.15 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 4.0 nC) technology has been especially tailored to minimize on- • Low Crss (Typ. 4.7 pF) state resistance, provide superior switching performance, • 100% Avalanche Tested and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply. D G G DS TO-220F S o Absolute Maximum Ratings TC = 25 C unless otherwise noted. Symbol Parameter FQPF3N25 Unit VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 2.3 A - Continuous (TC = 100°C) 1.45 A IDM (Note 1) 9.2 A Drain Current - Pulsed

5.2. fqpf30n06l.pdf Size:653K _fairchild_semi

FQPF33N10
FQPF33N10
May 2001 TM QFET FQPF30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 22.5A, 60V, RDS(on) = 0.035? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 50 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF30N06L Units VDSS Drain-S

5.3. fqp3n80c_fqpf3n80c.pdf Size:810K _fairchild_semi

FQPF33N10
FQPF33N10
TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 800V, RDS(on) = 4.8? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP3N80C FQPF3N80C Units VDSS Drain-Source Voltage 8

5.4. fqp32n20c_fqpf32n20c.pdf Size:1208K _fairchild_semi

FQPF33N10
FQPF33N10
® QFET FQP32N20C/FQPF32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 28A, 200V, RDS(on) = 0.082? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 82.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 185 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D ? ? ? ? ^ ^ ? ? G ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP32N20C FQPF32N20C Unit

5.5. fqp3n50c_fqpf3n50c.pdf Size:1269K _fairchild_semi

FQPF33N10
FQPF33N10
® QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description • 3 A, 500 V, RDS(on) = 2.5 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 10 nC ) DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to mini- • Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and • 100 % avalanche tested commutation mode. These devices are well suited for high effi- • Improved dv/dt capability ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF

See also transistors datasheet: FQPF2N60C , FCA20N60_F109 , FQPF2N70 , FQPF2N80 , FCPF16N60 , FQPF30N06L , FQPF32N20C , FDMC8854 , CEP83A3 , FDMS9600S , FQPF33N10L , FDP8442_F085 , FQPF3N80C , FDMS8680 , FQPF45N15V2 , FQPF47P06 , FQPF4N90C .

Keywords

 FQPF33N10 Datasheet  FQPF33N10 Datenblatt  FQPF33N10 RoHS  FQPF33N10 Distributor
 FQPF33N10 Application Notes  FQPF33N10 Component  FQPF33N10 Circuit  FQPF33N10 Schematic
 FQPF33N10 Equivalent  FQPF33N10 Cross Reference  FQPF33N10 Data Sheet  FQPF33N10 Fiche Technique

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