FQPF5P20 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FQPF5P20

Type of FQPF5P20 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 200V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 3.4

Maximum junction temperature (Tj), °C:

Rise Time of FQPF5P20 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.4

Package: TO220F

Equivalent transistors for FQPF5P20

FQPF5P20 PDF documents for downloads:

1.1. fqpf5p20.pdf Size:610K _fairchild_semi

May 2000 TM QFET QFET QFET QFET FQPF5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • -3.4A, -200V, RDS(on) = 1.4? @VGS = -10 V This advanced technology has been especially tailored to • Low gate charge ( typical 10 nC) minimize on-state resistance, provide superior switching • Low Crss ( typical 12 pF) performance, and withstand high energy pulse in the • Fast switching avalanche and commutation mode. These devices are well • 100% avalanche tested suited for high efficiency switching DC/DC converters. S ? ? ? ? ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G D S TO-220F D FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF5P20 Units VDSS Drain-Source Voltage -200 V ID Drain Current - Continuous (TC =

5.1. fqp5n60c_fqpf5n60c.pdf Size:858K _fairchild_semi

TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unl

5.2. fqpf5n50cf.pdf Size:657K _fairchild_semi

TM FRFET FQPF5N50CF 500V N-Channel MOSFET Features Description • 5A, 500V, RDS(on) = 1.55 ? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 18nC) DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- • Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and • 100% avalanche tested commutation mode. These devices are well suited for high effi- • Improved dv/dt capability ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220F G D S FQPF Series S Absolute Maximum Ratings Symbol Parameter FQPF5N50CF Units VDSS Drain-

5.3. fqpf5n40.pdf Size:728K _fairchild_semi

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 400V, RDS(on) = 1.6? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.0 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. D G G D S TO-220F S AbsoIute Maximum Ratings TC = 25°C unless otherwise noted SymboI Parameter FQPF5N40 Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25°C) 3.0 A - Continuous (TC = 100°C)

5.4. fqpf5n90.pdf Size:665K _fairchild_semi

September 2000 TM QFET QFET QFET QFET FQPF5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 900V, RDS(on) = 2.3 ? @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF5N90 Units VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 3.0 A - Continuous (TC = 100°C) 1.9 A IDM (Note 1) 12 A Drain Current - Pulsed

5.5. fqp5n50c_fqpf5n50c.pdf Size:879K _fairchild_semi

TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless

5.6. fqpf50n06.pdf Size:630K _fairchild_semi

May 2001 TM QFET FQPF50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 31A, 60V, RDS(on) = 0.022? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 65 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF50N06 Units VDSS Drain-Source Volt

See also transistors datasheet: FQPF3N80C , FQPF3N80C , FQPF45N15V2 , FQPF47P06 , FQPF4N90C , FQPF5N40 , FQPF5N40 , FQPF5N90 , BF980 , FQPF630 , FQPF630 , FQPF65N06 , FQPF6N80C , FQPF6N80C , FQPF6N80T , FQPF6N80T , FQPF6N90C .

Keywords