FQPF6N80C MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FQPF6N80C

Type of FQPF6N80C transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 800V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5.5

Maximum junction temperature (Tj), °C:

Rise Time of FQPF6N80C transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 2.5

Package: TO220F

Equivalent transistors for FQPF6N80C

FQPF6N80C PDF documents for downloads:

1.1. fqp6n80c_fqpf6n80c.pdf Size:889K _fairchild_semi

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 800V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 21 nC) planar stripe, DMOS technology. • Low Crss ( typical 8 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP6N80C FQPF6N80C Units VDSS Drain-Source Voltage 800

2.1. fqpf6n80t.pdf Size:1001K _fairchild_semi

TM QFET FQPF6N80T 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.3A, 800V, RDS(on) = 1.95? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 14 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 100% package isolation tested (Note 6) suited for high efficiency switch mode power supply. D G TO-220F Potted G D S FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF6N80T Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 3.3 A - Continuous

4.1. fqp6n40c_fqpf6n40c.pdf Size:851K _fairchild_semi

TM QFET FQP6N40C/FQPF6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6A, 400V, RDS(on) = 1.0 ? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter

4.2. fqp6n60c_fqpf6n60c.pdf Size:931K _fairchild_semi

® QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 600V, RDS(on) = 2.0? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 7 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless

4.3. fqp6n90c_fqpf6n90c.pdf Size:860K _fairchild_semi

TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6A, 900V, RDS(on) = 2.3? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP6N90C FQPF6N90C Units VDSS Drain-Source Voltage 900

4.4. fqp6n40cf_fqpf6n40cf.pdf Size:1088K _fairchild_semi

February 2006 TM FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS(on) = 1.1 ? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 16nC) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typical 15pF) minimize on-state resistance, provide superior switching • Fast switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high • 100% avalanche tested efficiency switched mode power supplies, electronic lamp • Improved dv/dt capability ballasts based on half bridge topology. • Fast recovery body diode (typical 70ns) D G TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings Symbol Parameter FQP6N40CF FQPF6N40CF Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 2

See also transistors datasheet: FQPF4N90C , FQPF5N40 , FQPF5N40 , FQPF5N90 , FQPF5P20 , FQPF630 , FQPF630 , FQPF65N06 , IRFP240 , FQPF6N80C , FQPF6N80T , FQPF6N80T , FQPF6N90C , FQPF70N10 , FQPF70N10 , FQPF7N60 , FQPF7N60 .

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