FQT1N60C MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FQT1N60C

Type of FQT1N60C transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 600V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.2

Maximum junction temperature (Tj), °C:

Rise Time of FQT1N60C transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 11.5

Package: SOT223

Equivalent transistors for FQT1N60C

FQT1N60C PDF documents for downloads:

1.1. fqt1n60c.pdf Size:816K _fairchild_semi

November 2007 ® QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5? Features Description • RDS(on) = 9.3? (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 4.8nC) stripe, DMOS technology. • Low Crss ( Typ. 3.5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching • Fast switching performance, and withstand high energy pulse in the avalanche • 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor • Improved dv/dt capability correction. • RoHS compliant D D S G G SOT-223 FQT Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FQT1N60C Units VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V -Continuous (TC = 25oC) 0.2 ID Drain Current A

See also transistors datasheet: FQPF9P25 , FQS4900 , FQS4900 , FQS4901 , FQS4901 , FQS4903 , FQT13N06 , FQT13N06L , IRF511 , FQT1N60C , FQT1N80 , FQT1N80 , FQT3P20 , FQT4N20L , FQT4N20L , FQT4N25 , FQT5P10 .

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