DMG3420U MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: DMG3420U

Type of DMG3420U transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.74

Maximum drain-source voltage |Uds|, V: 20V

Maximum gate-source voltage |Ugs|, V: 12

Maximum drain current |Id|, A: 5.47

Maximum junction temperature (Tj), °C:

Rise Time of DMG3420U transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 434.7

Maximum drain-source on-state resistance (Rds), Ohm: 0.035

Package: SOT23

Equivalent transistors for DMG3420U

DMG3420U PDF documents for downloads:

1.1. dmg3420u.pdf Size:156K _diodes

DMG3420U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • Case: SOT-23 • Low Input Capacitance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020 • Low Input/Output Leakage • Terminals: Finish ? Matte Tin annealed over Copper leadframe. • Lead Free By Design/RoHS Compliant (Note 1) Solderable per MIL-STD-202, Method 208 • "Green" Device (Note 2) • Terminals Connections: See Diagram Below • Qualified to AEC-Q101 Standards for High Reliability • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.008 grams (approximate) Drain D Gate G S Source Internal Schematic TOP VIEW TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Steady TA = 25°C 5.47 Continuous Dra

5.1. dmg3415ufy4.pdf Size:143K _diodes

DMG3415UFY4 P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance • Case: DFN2015H4-3 • 39m? @ VGS = -4.5V • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • 52m? @ VGS = -2.5V • Moisture Sensitivity: Level 1 per J-STD-020 • 65m? @ VGS = -1.8V • Terminals: Finish ? Matte Tin over Copper leadframe. • Low Input Capacitance Solderable per MIL-STD-202, Method 208 • Fast Switching Speed • Terminals Connections: See Diagram Below • Low Input/Output Leakage • Marking Information: See Page 4 • Lead Free By Design/RoHS Compliant (Note 1) • Ordering Information: See Page 4 • ESD Protected Up To 3kV • Weight: 0.008 grams (approximate) • "Green" Device, Halogen and Antimony Free (Note 2) • Qualified to AEC-Q101 Standards for High Reliability S D G ESD PROTECTED TO 3kV TOP VIEW BOTTOM VIEW Internal Schematic Maxi

5.2. dmg3414u.pdf Size:141K _diodes

DMG3414U N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance • Case: SOT-23 • 25m? @ VGS = 4.5V • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • 29m? @ VGS = 2.5V • Moisture Sensitivity: Level 1 per J-STD-020D • 37m? @ VGS = 1.8V • Terminals: Finish ? Matte Tin annealed over Copper leadframe. • Low Input Capacitance Solderable per MIL-STD-202, Method 208 • Fast Switching Speed • Terminals Connections: See Diagram Below • Low Input/Output Leakage • Marking Information: See Page 4 • Lead Free By Design/RoHS Compliant (Note 1) • Ordering Information: See Page 4 • "Green" Device (Note 2) • Weight: 0.008 grams (approximate) • Qualified to AEC-Q101 Standards for High Reliability Drain D Gate G S Source Internal Schematic TOP VIEW TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Charact

5.3. dmg3415u.pdf Size:128K _diodes

DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance • Case: SOT-23 • 42.5m? @ VGS = -4.5V • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • 53m? @ VGS = -2.5V • Moisture Sensitivity: Level 1 per J-STD-020D • 71m? @ VGS = -1.8V • Terminals: Finish ? Matte Tin annealed over Copper leadframe. • Low Input Capacitance Solderable per MIL-STD-202, Method 208 • Fast Switching Speed • Terminals Connections: See Diagram Below • Low Input/Output Leakage • Marking Information: See Page 2 • Lead Free By Design/RoHS Compliant (Note 1) • Ordering Information: See Page 2 • ESD Protected Up To 3kV • Weight: 0.008 grams (approximate) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Drain D Gate Gate Protection Source G S Diode Internal Schematic TOP VIEW ESD PROTEC

See also transistors datasheet: SI4542DY , SI4542DY , SSN1N45B , DMG1012T , DMG1012UW , DMG1024UV , DMG2302U , DMG3414U , 2N7001 , DMG5802LFX , DMG6898LSD , DMG6968U , DMG6968UDM , DMG6968UTS , DMG8601UFG , DMG8822UTS , DMG9926UDM .

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