DMG5802LFX MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: DMG5802LFX

Type of DMG5802LFX transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.98

Maximum drain-source voltage |Uds|, V: 24V

Maximum gate-source voltage |Ugs|, V: 12

Maximum drain current |Id|, A: 6.5

Maximum junction temperature (Tj), °C:

Rise Time of DMG5802LFX transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1066.4

Maximum drain-source on-state resistance (Rds), Ohm: 0.015

Package: WDFN50206

Equivalent transistors for DMG5802LFX

DMG5802LFX PDF documents for downloads:

1.1. dmg5802lfx.pdf Size:136K _diodes

DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low On-Resistance ID V(BR)DSS RDS(ON) • Low Input Capacitance TA = 25°C • Fast Switching Speed 15m? @ VGS = 4.5V 6.5A • Low Input/Output Leakage 24V • Lead Free By Design/RoHS Compliant (Note 1) 20m? @ VGS = 2.5V 5.6A • "Green" Device (Note 2) • ESD Protected up to 3kV • Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (RDS(on)) and yet maintain superior switching • Case: DFN5020-6 performance, making it ideal for high efficiency power management applications. • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • DC-DC Converters • Terminal Connections: See Diagram Below • Power management functions • Weight: 0.03 grams (app

See also transistors datasheet: SI4542DY , SSN1N45B , DMG1012T , DMG1012UW , DMG1024UV , DMG2302U , DMG3414U , DMG3420U , 3SK45 , DMG6898LSD , DMG6968U , DMG6968UDM , DMG6968UTS , DMG8601UFG , DMG8822UTS , DMG9926UDM , DMG9926USD .

Keywords