DMG9926UDM MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: DMG9926UDM

Type of DMG9926UDM transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.98

Maximum drain-source voltage |Uds|, V: 20V

Maximum gate-source voltage |Ugs|, V: 8

Maximum drain current |Id|, A: 4.2

Maximum junction temperature (Tj), °C:

Rise Time of DMG9926UDM transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 856

Maximum drain-source on-state resistance (Rds), Ohm: 0.028

Package: SOT26

Equivalent transistors for DMG9926UDM

DMG9926UDM PDF documents for downloads:

1.1. dmg9926udm.pdf Size:135K _diodes

DMG9926UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • Low Gate Charge • Case: SOT-26 • Low RDS(ON): • Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • 28m? @VGS = 4.5V • Moisture Sensitivity: Level 1 per J-STD-020D • 32m? @VGS = 2.5V • Terminals: Finish – Matte Tin annealed over Copper • 40m? @VGS = 1.8V leadframe. Solderable per MIL-STD-202, Method 208 • Low Input/Output Leakage • Terminal Connections: See Diagram • Lead Free By Design/RoHS Compliant (Note 3) • Marking Information: See Page 4 • Qualified to AEC-Q101 Standards for High Reliability • Ordering Information: See Page 4 • "Green" Device (Note 4) • Weight: 0.008 grams (approximate) SOT-26 D1 D2 S G 1 1 D/D D/D 1 2 1 2 G1 G2 G S 2 2 S1 S2 TOP VIEW TOP VIEW Equivalent Circuit Pin Configuration Maximum Ratings @TA = 25°C unless otherwi

2.1. dmg9926usd.pdf Size:161K _diodes

DMG9926USD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Dual N-Channel MOSFET • Case: SOP-8L • Low On-Resistance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • 24m? @ VGS = 4.5V • Moisture Sensitivity: Level 1 per J-STD-020D • 29m? @ VGS = 2.5V • Terminals Connections: See Diagram • 37m? @ VGS = 1.8V • Terminals: Finish - Matte Tin annealed over Copper lead • Low Gate Threshold Voltage frame. Solderable per MIL-STD-202, Method 208 • Low Input Capacitance • Marking Information: See Page 4 • Fast Switching Speed • Ordering Information: See Page 4 • Low Input/Output Leakage • Weight: 0.072g (approximate) • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability D1 D2 SOP-8L S1 D1 G1 D1 G1 G2 S2 D2 G2 D2 S1 S2 TOP VIEW TOP VIEW Internal Schematic N-Channel MOSFET N-Channel

5.1. dmg9933usd.pdf Size:157K _diodes

DMG9933USD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • Case: SO-8 • Low Input Capacitance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020 • Low Input/Output Leakage • Terminal Connections: See Diagram Below • Lead Free By Design/RoHS Compliant (Note 1) • Marking Information: See Page 4 • "Green" Device (Note 2) • Ordering Information: See Page 4 • Qualified to AEC-Q101 Standards for High Reliability • Weight: 0.072 grams (approximate) SO-8 D1 D2 S1 D1 G1 D1 G1 G2 S2 D2 G2 D2 S1 S2 Top View Top View Internal Schematic P-Channel MOSFET P-Channel MOSFET Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS -20 V ±12 Gate-Source Voltage VGSS V Steady TA = 25°C -4.6 Continuous Drain Current (Note 3) VGS = -4.5V ID A S

See also transistors datasheet: DMG3420U , DMG5802LFX , DMG6898LSD , DMG6968U , DMG6968UDM , DMG6968UTS , DMG8601UFG , DMG8822UTS , IRF9540N , DMG9926USD , DMN2004DMK , DMN2004DWK , DMN2004K , DMN2004TK , DMN2004VK , DMN2004WK , DMN2005DLP4K .

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