DMN2027LK3 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: DMN2027LK3

Type of DMN2027LK3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 8.9

Maximum drain-source voltage |Uds|, V: 20V

Maximum gate-source voltage |Ugs|, V: 12

Maximum drain current |Id|, A: 17

Maximum junction temperature (Tj), °C:

Rise Time of DMN2027LK3 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 857

Maximum drain-source on-state resistance (Rds), Ohm: 0.027

Package: TO252_(DPAK)

Equivalent transistors for DMN2027LK3

DMN2027LK3 PDF documents for downloads:

1.1. dmn2027lk3.pdf Size:652K _diodes

A Product Line of Diodes Incorporated DMN2027LK3 20V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits • Low on-resistance ID V(BR)DSS RDS(on) • Fast switching speed TA = 25°C • Low gate drive 21m? @ VGS= 10V 17.0A • “Green” component and RoHS compliant (Note 1) 20V 27m? @ VGS= 4.5V 15.0A 40m? @ VGS= 2.5V 12.3A Mechanical Data • Case: TO252-3L • Case Material: Molded Plastic, “Green” Molding Compound. UL Description and Applications Flammability Classification Rating 94V-0 (Note 1) This new generation MOSFET has been designed to minimize the on- • Moisture Sensitivity: Level 1 per J-STD-020D state resistance (RDS(on)) and yet maintain superior switching • Terminals Connections: See Diagram performance, making it ideal for high efficiency power management • Terminals: Matte Tin Finish annealed over Copper leadframe. applications. Solderable per MIL-STD-202,

4.1. dmn2020lsn.pdf Size:153K _diodes

DMN2020LSN N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance • Case: SC-59 • Low Input Capacitance • Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020 • Low Input/Output Leakage • Terminals: Finish Matte Tin annealed over Copper leadframe. • ESD Protected Up To 2KV Solderable per MIL-STD-202, Method 208 • Lead Free By Design/RoHS Compliant (Note 1) • Terminal Connections: See Diagram • "Green" Device (Note 2) • Marking Information: See Page 2 • Qualified to AEC-Q101 Standards for High Reliability • Ordering Information: See Page 2 • Weight: 0.008 grams (approximate) SC-59 Drain D Gate G S Gate Protection Source TOP VIEW Diode ESD PROTECTED TO 2kV TOP VIEW Pin Out Configuration EQUIVALENT CIRCUIT Maximum Ratings @TA = 25°C u

5.1. dmn2004k.pdf Size:189K _diodes

DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits • Low On-Resistance: RDS(ON) = 550(max)m? @ VGS = 4.5V ID V(BR)DSS RDS(ON) • Low Gate Threshold Voltage TA = 25°C • Low Input Capacitance 0.55? @ VGS = 4.5V 630mA • Fast Switching Speed 20V • Low Input/Output Leakage 0.9? @ VGS = 1.8V 410mA • ESD Protected up to 2KV • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 standards for High Reliability Description and Applications This new generation MOSFET has been designed to minimize the on- state resistance (RDS(on)) and yet maintain superior switching Mechanical Data performance, making it ideal for high efficiency power management • Case: SOT-23 applications. • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • DC-DC Converters • Moisture Sensitivity: Level 1 per J-STD-020 • Power managemen

5.2. dmn2040lsd.pdf Size:153K _diodes

DMN2040LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • Dual N-Channel MOSFET • Case: SOP-8L • Low On-Resistance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • 26m? @ VGS = 4.5V • Moisture Sensitivity: Level 1 per J-STD-020D • 36m? @ VGS = 2.5V • Terminals Connections: See Diagram • Low Gate Threshold Voltage • Terminals: Finish - Matte Tin annealed over Copper lead • Low Input Capacitance frame. Solderable per MIL-STD-202, Method 208 • Fast Switching Speed • Marking Information: See Page 4 • Low Input/Output Leakage • Ordering Information: See Page 4 • Lead Free By Design/RoHS Compliant (Note 2) • Weight: 0.072 grams (approximate) • "Green" Device (Note 4) • Qualified to AEC-Q 101 Standards for High Reliability SOP-8L D1 D2 S1 D1 G1 D1 G1 G2 S2 D2 G2 D2 S1 S2 TOP VIEW TOP VIEW N-Channel MOSFE

5.3. dmn2004vk.pdf Size:204K _diodes

DMN2004VK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Dual N-Channel MOSFET • Case: SOT-563 • Low On-Resistance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Gate Threshold Voltage • Moisture Sensitivity: Level 1 per J-STD-020 • Low Input Capacitance • Terminal Connections: See Diagram • Fast Switching Speed • Terminals: Finish - Matte Tin annealed over Copper lead frame. • Ultra-Small Surface Mount Package Solderable per MIL-STD-202, Method 208 • Lead Free By Design/RoHS Compliant (Note 2) • Marking Information: See Page 4 • ESD Protected Gate up to 2kV • Ordering Information: See Page 4 • "Green" Device (Note 4) • Weight: 0.006 grams (approximate) • Qualified to AEC-Q101 Standards for High Reliability D2 G1 S1 SOT-563 S2 G2 D1 ESD protected up to 2kV TOP VIEW BOTTOM VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless ot

5.4. dmn2005lp4k.pdf Size:166K _diodes

DMN2005LP4K N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • Case: DFN1006H4-3 • Very Low Gate Threshold Voltage, 0.9V Max. • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020 • Low Input/Output Leakage • Terminal Connections: See Diagram • Ultra-Small Surface Mount Package • Terminals: Finish ? NiPdAu over Copper leadframe. Solderable • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) per MIL-STD-202, Method 208 • "Green" Device (Note 2) • Weight: 0.001 grams • ESD Protected Gate • Ultra Low Profile Package • Qualified to AEC-Q101 Standards for High Reliability Drain DFN1006H4-3 Body Diode Gate S D Gate Protection Source G Diode Top View Equivalent Circuit Bottom View ESD PROTECTED Pin-Out Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape widt

5.5. dmn2040lts.pdf Size:151K _diodes

DMN2040LTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • Dual N-Channel MOSFET • Case: TSSOP-8L • Low On-Resistance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Gate Threshold Voltage • Moisture Sensitivity: Level 1 per J-STD-020 • Low Input Capacitance • Terminal Connections: See Diagram Below • Fast Switching Speed • Marking Information: See Page 4 • Low Input/Output Leakage • Ordering Information: See Page 4 • Lead Free By Design/RoHS Compliant (Note 1) • Weight: 0.039 grams (approximate) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability D1 D2 G1 G2 1 8 D D S1 S2 2 7 S1 S2 3 6 G1 G2 4 5 S1 S2 Top View Internal Schematic TOP VIEW BOTTOM VIEW Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source

5.6. dmn2004dmk.pdf Size:284K _diodes

DMN2004DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Dual N-Channel MOSFET • Case: SOT-26 • Low On-Resistance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Gate Threshold Voltage • Moisture Sensitivity: Level 1 per J-STD-020C • Low Input Capacitance • Terminal Connections: See Diagram • Fast Switching Speed • Low Input/Output Leakage • Terminals: Finish ? Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Ultra-Small Surface Mount Package • Marking Information: See Page 4 • Lead Free By Design/RoHS Compliant (Note 2) • Ordering Information: See Page 4 • ESD Protected up to 2KV • Weight: 0.015 grams (approximate) • "Green" Device (Note 4) • Qualified to AEC-Q101 standards for High Reliability SOT-26 D2 G1 S1 S2 G2 D1 ESD protected up 2kV TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unle

5.7. dmn2050l.pdf Size:168K _diodes

DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance • Case: SOT-23 • 29m? @VGS = 4.5V • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • 50m? @VGS = 2.5V • Moisture Sensitivity: Level 1 per J-STD-020D • 100m? @VGS = 2.0V • Terminal Connections: See Diagram • Very Low Gate Threshold Voltage • Terminals: Finish ? Matte Tin annealed over Copper • Low Input Capacitance leadframe. Solderable per MIL-STD-202, Method 208 • Fast Switching Speed • Marking Information: See Page 4 • Lead, Halogen and Antimony Free, RoHS Compliant • Ordering Information: See Page 4 • "Green" Device (Notes 2, 3 and 6) • Weight: 0.008 grams (approximate) • Qualified to AEC-Q101 Standards for High Reliability SOT-23 Drain D Gate G S Source TOP VIEW TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25°C unless otherwis

5.8. dmn2075u.pdf Size:159K _diodes

DMN2075U N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance • Case: SOT-23 • Low Input Capacitance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020 • Low Input/Output Leakage • Terminals: Finish ? Matte Tin annealed over Copper leadframe. • Lead Free By Design/RoHS Compliant (Note 1) Solderable per MIL-STD-202, Method 208 • "Green" Device (Note 2) • Terminals Connections: See Diagram Below • Qualified to AEC-Q101 Standards for High Reliability • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.008 grams (approximate) Drain D Gate G S Source Internal Schematic TOP VIEW TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Sou

5.9. dmn2004tk.pdf Size:184K _diodes

DMN2004TK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • Case: SOT-523 • Low Gate Threshold Voltage • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020 • Fast Switching Speed • Terminals: Finish ? Matte Tin annealed over Alloy 42 • Low Input/Output Leakage leadframe. Solderable per MIL-STD-202, Method 208 • ESD Protected up to 2kV • Terminal Connections: See Diagram • Lead Free By Design/RoHS Compliant (Note 1) • Weight: 0.002 grams (approximate) • "Green" Device (Note 2) • Qualified to AEC-Q101 standards for High Reliability Drain D SOT-523 Gate Gate G S Protection Source Diode Top View ESD PROTECTED TO 2kV Top View Equivalent Circuit Ordering Information (Note 3) Part Number Case Packaging DMN2004TK-7 SOT-523 3000/Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes

5.10. dmn2041l.pdf Size:157K _diodes

DMN2041L N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance • Case: SOT-23 • Low Gate Threshold Voltage • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020 • Fast Switching Speed • Terminals: Finish ? Matte Tin annealed over Copper leadframe. • Low Input/Output Leakage Solderable per MIL-STD-202, Method 208 • Lead Free By Design/RoHS Compliant (Note 1) • Terminals Connections: See Diagram Below • "Green" Device (Note 2) • Marking Information: See Page 4 • Qualified to AEC-Q101 Standards for High Reliability • Ordering Information: See Page 4 • Weight: 0.008 grams (approximate) Drain D Gate G S Source Internal Schematic TOP VIEW TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Sou

5.11. dmn2005k.pdf Size:239K _diodes

DMN2005K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Low On-Resistance • Case: SOT-23 • Very Low Gate Threshold Voltage, 0.9V Max. • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating94V-0 • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020C • Low Input/Output Leakage • Terminal Connections: See Diagram • Ultra-Small Surface Mount Package • Terminals: Finish ? Matte Tin annealed over Copper • Lead Free By Design/RoHS Compliant (Note 2) leadframe. Solderable per MIL-STD-202, Method 208 • "Green" Device (Note 4) • Marking Information: See Page 3 • ESD Protected Gate • Ordering & Date Code Information: See Page 3 • Weight: 0.008 grams (approximate) Drain SOT-23 D Body Diode Gate ESD protected G S Gate TOP VIEW Protection Source Diode TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value

5.12. dmn2009lss.pdf Size:145K _diodes

DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • Case: SO-8 • 8m? @ VGS = 10V • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • 9m? @ VGS = 4.5V • Moisture Sensitivity: Level 1 per J-STD-020 • 12m? @ VGS = 2.5V • Terminals Connections: See Diagram • Low Gate Threshold Voltage • Terminals: Finish - Matte Tin annealed over Copper lead frame. • Low Input Capacitance Solderable per MIL-STD-202, Method 208 • Fast Switching Speed • Marking Information: See Page 4 • Low Input/Output Leakage • Ordering Information: See Page 4 • Lead Free By Design/RoHS Compliant (Note 2) • Weight: 0.072 grams (approximate) • "Green" Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability SO-8 S D S D S D G D TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-

5.13. dmn2041lsd.pdf Size:182K _diodes

DMN2041LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance • Case: SO-8 • Low Gate Threshold Voltage • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020 • Fast Switching Speed • Terminals Connections: See Diagram • Low Input/Output Leakage • Terminals: Finish - Matte Tin annealed over Copper lead frame. • Lead Free By Design/RoHS Compliant (Note 1) Solderable per MIL-STD-202, Method 208 • "Green" Device (Note 2) • Marking Information: See Page 4 • Qualified to AEC-Q101 Standards for High Reliability • Ordering Information: See Page 4 • Weight: 0.072 grams (approximate) SO-8 D1 D2 S1 D1 G1 D1 G1 G2 S2 D2 G2 D2 S1 S2 TOP VIEW TOP VIEW Internal Schematic N-Channel MOSFET N-Channel MOSFET Maximum Ratings @TA = 25°C unless othe

5.14. dmn2005dlp4k.pdf Size:178K _diodes

DMN2005DLP4K DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance • Case: DFN1310H4-6 • Very Low Gate Threshold Voltage, 0.9V Max. • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020 • Low Input/Output Leakage • Terminal Connections: See Diagram • Ultra-Small Surface Mount Package • Terminals: Finish ? NiPdAu annealed over Copper leadframe. • Lead Free By Design/RoHS Compliant (Note 2) Solderable per MIL-STD-202, Method 208 • "Green" Device (Note 4) • Marking Information: See Page 3 • ESD Protected Gate • Ordering Information: See Page 3 • Ultra Low Profile Package D1 S2 DFN1310H4-6 G2 S1 G1 D2 ESD protected TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Val

5.15. dmn2004wk.pdf Size:172K _diodes

DMN2004WK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance: RDS(ON) • Case: SOT-323 • Case Material: Molded Plastic, “Green” Molding Compound. • Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020D • Fast Switching Speed • Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. • Low Input/Output Leakage Solderable per MIL-STD-202, Method 208 • Lead Free By Design/RoHS Compliant (Note 2) • Terminal Connections: See Diagram • ESD Protected up to 2KV • Marking Information: See Page 4 • "Green" Device (Note 4) • Ordering Information: See Page 4 • Qualified to AEC-Q101 standards for High Reliability • Weight: 0.006 grams (approximate) Drain SOT-323 D Gate Gate Protection G S Source Diode TOP VIEW ESD protected up to 2kV EQUIVALENT CIRCUIT TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Characte

5.16. dmn2005lpk.pdf Size:162K _diodes

DMN2005LPK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • Case: DFN1006-3 • Low Gate Threshold Voltage • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020 • Low Input/Output Leakage • Terminal Connections: See Diagram • Ultra-Small Surface Mount Package • Terminals: Finish – NiPdAu over Copper leadframe. Solderable • Lead Free By Design/RoHS Compliant (Note 1) per MIL-STD-202, Method 208 • "Green" Device (Note 2) • Weight: 0.001 grams (approximate) • ESD Protected Gate • Qualified to AEC-Q101 Standards for High Reliability Drain Body DFN1006-3 Diode Gate S D Gate Protection Source G Diode Top View Equivalent Circuit Bottom View ESD PROTECTED Internal Schematic Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel DMN2005LPK-7

5.17. dmn2004dwk.pdf Size:278K _diodes

DMN2004DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Dual N-Channel MOSFET • Case: SOT-363 • Low On-Resistance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Gate Threshold Voltage • Moisture Sensitivity: Level 1 per J-STD-020C • Low Input Capacitance • Terminal Connections: See Diagram • Fast Switching Speed • Low Input/Output Leakage • Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Ultra-Small Surface Mount Package • Marking Information: See Page 4 • Lead Free By Design/RoHS Compliant (Note 2) • Ordering Information: See Page 4 • ESD Protected up to 2KV • Weight: 0.006 grams (approximate) • "Green" Device (Note 4) • Qualified to AEC-Q101 standards for High Reliability CASE D2 G1 S1 ESD protected up to 2kV S2 G2 D1 TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C

5.18. dmn2016uts.pdf Size:168K _diodes

DMN2016UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance • Case: TSSOP-8L • Low Input Capacitance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020 • Low Input/Output Leakage • Terminal Connections: See Diagram Below • Lead Free By Design/RoHS Compliant (Note 1) • Marking Information: See Page 4 • ESD Protected Up To 2KV • Ordering Information: See Page 4 • "Green" Device (Note 2) • Weight: 0.039 grams (approximate) • Qualified to AEC-Q101 Standards for High Reliability D1 D2 TSSOP-8L G1 G2 1 8 D D S1 S2 2 7 S1 S2 3 6 G1 G2 4 5 S1 S2 BOTTOM VIEW Top View TOP VIEW ESD PROTECTED TO 2kV Internal Schematic Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-S

See also transistors datasheet: DMN2004WK , DMN2005DLP4K , DMN2005K , DMN2005LP4K , DMN2005LPK , DMN2009LSS , DMN2016UTS , DMN2020LSN , BUZ900 , DMN2027USS , DMN2028USS , DMN2040LTS , DMN2041LSD , DMN2050L , DMN2075U , DMN2100UDM , DMN2112SN .

Keywords