DMN601TK MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: DMN601TK

Type of DMN601TK transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.15

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 0.3

Maximum junction temperature (Tj), °C:

Rise Time of DMN601TK transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 50

Maximum drain-source on-state resistance (Rds), Ohm: 3

Package: SOT523

Equivalent transistors for DMN601TK

DMN601TK PDF documents for downloads:

1.1. dmn601tk.pdf Size:136K _diodes

DMN601TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance: RDS(ON) • Case: SOT-523 • Case Material: Molded Plastic, “Green” Molding • Low Gate Threshold Voltage Compound. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020D • Fast Switching Speed • Terminals: Finish ? Matte Tin annealed over Alloy 42 • Low Input/Output Leakage leadframe. Solderable per MIL-STD-202, Method 208 • Lead Free By Design/RoHS Compliant (Note 2) • Terminal Connections: See Diagram • ESD Protected Up To 2kV • Marking Information: See Page 3 • "Green" Device (Note 4) • Ordering Information: See Page 3 • Weight: 0.002 grams (approximate) SOT-523 Drain D Gate G S Gate Protection Source TOP VIEW Diode TOP VIEW ESD Protected up to 2kV EQUIVALENT CIRCUIT Pin Out Configuration Maximum Ratings @TA

4.1. dmn601wk.pdf Size:148K _diodes

DMN601WK N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance: RDS(ON) • Case: SOT-323 • Case Material: Molded Plastic, “Green” Molding Compound. • Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020D • Fast Switching Speed • Terminals: Finish ? Matte Tin annealed over Alloy 42 • Low Input/Output Leakage leadframe. Solderable per MIL-STD-202, Method 208 • Lead Free By Design/RoHS Compliant (Note 2) • Terminal Connections: See Diagram • ESD Protected Up To 2kV • Marking Information: See Page 3 • "Green" Device (Note 4) • Ordering Information: See Page 3 • Weight: 0.006 grams (approximate) SOT-323 Drain D Gate G S Gate Protection Source Diode TOP VIEW TOP VIEW Pin Out Configuration ESD PROTECTED TO 2kV EQUIVALENT CIRCUIT Maximum Ratings @TA = 25°C unless otherwis

4.2. dmn601k.pdf Size:185K _diodes

DMN601K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance: RDS(ON) • Case: SOT-23 • Case Material: Molded Plastic, “Green” Molding • Low Gate Threshold Voltage Compound. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020C • Fast Switching Speed • Terminals: Finish ? Matte Tin annealed over Alloy 42 • Low Input/Output Leakage leadframe. Solderable per MIL-STD-202, Method 208 • Lead, Halogen and Antimony Free, RoHS Compliant • Terminal Connections: See Diagram "Green" Device (Notes 2, 4 and 6) • Marking Information: See Page 3 • ESD Protected Up To 2kV • Ordering Information: See Page 3 • Weight: 0.008 grams (approximate) Drain SOT-23 D Gate ESD protected up to 2kV G S TOP VIEW Gate Protection Source Diode TOP VIEW EQUIVALENT CIRCUIT Pin Out Configuration Maximum Ra

4.3. dmn601dwk.pdf Size:196K _diodes

DMN601DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • Dual N-Channel MOSFET • Case: SOT-363 • Low On-Resistance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Gate Threshold Voltage • Moisture Sensitivity: Level 1 per J-STD-020C • Low Input Capacitance • Terminals Connections: See Diagram • Fast Switching Speed • Low Input/Output Leakage • Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Ultra-Small Surface Mount Package • Marking Information: See Page 4 • Lead Free By Design/RoHS Compliant (Note 2) • Ordering Information: See Page 4 • ESD Protected Up To 2kV • Weight: 0.006 grams (approximate) • "Green" Device (Note 4) Drain SOT-363 D2 G1 S1 Body Diode Gate S2 G2 D1 ESD Protected up to 2kV Gate TOP VIEW Protection Sou

4.4. dmn601dmk.pdf Size:198K _diodes

DMN601DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • Dual N-Channel MOSFET • Case: SOT-26 • Low On-Resistance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Gate Threshold Voltage • Moisture Sensitivity: Level 1 per J-STD-020C • Low Input Capacitance • Terminal Connections: See Diagram • Fast Switching Speed • Low Input/Output Leakage • Terminals: Finish ? Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Ultra-Small Surface Mount Package • Marking Information: See Page 3 • Lead Free By Design/RoHS Compliant (Note 2) • Ordering Information: See Page 3 • ESD Protected Up To 2kV • Weight: 0.015 grams (approximate) • "Green" Device (Note 4) Drain SOT-26 D2 G1 S1 Body Diode Gate Gate S2 G2 D1 ESD protected up to 2kV Protection TOP VIEW Source

4.5. dmn601vk.pdf Size:286K _diodes

DMN601VK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Dual N-Channel MOSFET • Case: SOT-563 • Low On-Resistance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Gate Threshold Voltage • Moisture Sensitivity: Level 1 per J-STD-020C • Low Input Capacitance • Terminal Connections: See Diagram • Fast Switching Speed • Low Input/Output Leakage • Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Ultra-Small Surface Mount Package • Marking Information: See Page 3 • Lead Free By Design/RoHS Compliant (Note 2) • Ordering Information: See Page 3 • ESD Protected Up To 2kV • Weight: 0.006 grams (approximate) • "Green" Device (Note 4) SOT-563 D2 G1 S1 ESD Protected up to 2kV TOP VIEW S2 G2 D1 TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value

See also transistors datasheet: DMN5L06K , DMN5L06TK , DMN5L06VAK , DMN5L06VK , DMN5L06WK , DMN601DMK , DMN601DWK , DMN601K , IRF9640 , DMN601VK , DMN601WK , DMN6066SSD , DMN6066SSS , DMN6068LK3 , DMN6068SE , DMN62D1SFB , DMN66D0LDW .

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