ZXMN6A08E6 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: ZXMN6A08E6

Type of ZXMN6A08E6 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1.7

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 3.5

Maximum junction temperature (Tj), °C:

Rise Time of ZXMN6A08E6 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 459

Maximum drain-source on-state resistance (Rds), Ohm: 0.15

Package: SOT26

Equivalent transistors for ZXMN6A08E6

ZXMN6A08E6 PDF documents for downloads:

1.1. zxmn6a08e6.pdf Size:652K _diodes

A Product Line of Diodes Incorporated ZXMN6A08E6 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low on-resistance ID V(BR)DSS RDS(on) • Fast switching speed TA = 25°C • Low gate drive 80m? @ VGS=10V 3.5A • Low threshold 100V • “Green” component and RoHS compliant (Note 1) 150m? @ VGS=4.5V 2.5A • Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance • Case: SOT23-6 and yet maintain superior switching performance, making it ideal for • Case Material: Molded Plastic, UL Flammability Classification high efficiency power management applications. Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • DC-DC Converters • Terminals: Finish - Matte Tin annealed over Copper lead frame. • Power management functions Solderable per MIL-STD-202, Method 208 • Disconnect switches • Weight: 0.018 grams (ap

2.1. zxmn6a08g.pdf Size:446K _diodes

ZXMN6A08G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.080 @ VGS = 10V 5.3 60 0.150 @ VGS = 4.5V 2.8 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D • Low on-resistance • Fast switching speed G • Low threshold • Low gate drive S • SOT223 package Applications • DC-DC converters S • Power management functions • Disconnect switches D D • Motor control G Ordering information Pinout - top view Device Reel size Tape width Quantity per (inches) (mm) reel ZXMN6A08GTA 7 12 1,000 ZXMN6A08GTC 13 12 4,000 Device marking ZXMN 6A08 Issue 1 - May 2006 1 www.zetex.com © Zetex Semiconductors plc 2006 ZXMN6A08G Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS 60 V Gate-source voltage VGS ± 20 V 5.3 A Continuous

2.2. zxmn6a08k.pdf Size:660K _diodes

A Product Line of Diodes Incorporated ZXMN6A08K 60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits • Low on-resistance ID V(BR)DSS RDS(on) • Fast switching speed TA = 25°C • “Green” component and RoHS compliant (Note 1) 80m? @ VGS= 10V 7.90A 60V 150m? @ VGS= 4.5V 5.75A Mechanical Data • Case: TO-252 • Case Material: Molded Plastic, “Green” Molding Compound. UL Description and Applications Flammability Classification Rating 94V-0 (Note 1) This new generation MOSFET has been designed to minimize the on- • Moisture Sensitivity: Level 1 per J-STD-020D state resistance (RDS(on)) and yet maintain superior switching • Terminals Connections: See Diagram performance, making it ideal for high efficiency power management applications. • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Backlighting • Weight: 0.33

See also transistors datasheet: DMN66D0LDW , DMN66D0LT , DMN66D0LW , ZXM64N035L3 , ZXMN4A06G , ZXMN4A06K , ZXMN6A07F , ZXMN6A07Z , BF982 , ZXMN6A08G , ZXMN6A08K , ZXMN6A09DN8 , ZXMN6A09G , ZXMN6A09K , ZXMN6A11DN8 , ZXMN6A11G , ZXMN6A11Z .

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