ZXMP2120G4 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: ZXMP2120G4

Type of ZXMP2120G4 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 2

Maximum drain-source voltage |Uds|, V: 200V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 0.2

Maximum junction temperature (Tj), °C:

Rise Time of ZXMP2120G4 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 100

Maximum drain-source on-state resistance (Rds), Ohm: 25

Package: SOT223

Equivalent transistors for ZXMP2120G4

ZXMP2120G4 PDF documents for downloads:

1.1. zxmp2120g4.pdf Size:416K _diodes

ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of telecom and general high voltage circuits. A SOT23-5 version is also available (ZXMP2120E5). SOT223 FEATURES • High voltage • Low on-resistance • Fast switching speed • Low gate drive • Low threshold • SOT223 package variant engineered to increase spacing between high voltage pins. APPLICATIONS • Active clamping of primary side MOSFETs in 48 volt DC-DC converters S ORDERING INFORMATION D N/C DEVICE REEL SIZE TAPE WIDTH (mm) QUANTITY (inches) PER REEL G ZXMP2120G4TA 7 12mm embossed 1,000 units Pinout - top view ZXMP2120G4TC 13 12mm embossed 4,000 units DEVICE

2.1. zxmp2120e5.pdf Size:386K _diodes

ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. A 4 pin SOT223 version is also available (ZXMP2120G4). SOT23-5 FEATURES • High voltage • Low on-resistance • Fast switching speed • Low gate drive • Low threshold • SOT23-5 package variant engineered to increase spacing between high voltage pins. APPLICATIONS • Active clamping of primary side MOSFETs in 48 volt DC-DC converters ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH (mm) QUANTITY N/C S (inches) PER REEL ZXMP2120E5TA 7 8mm embossed 3,000 units D N/C G DEVICE MARKING • P120 PINOUT - TOP VIEW ISSUE 2 - SEPTEM

2.2. zxmp2120ff.pdf Size:417K _diodes

ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and freedom from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of telecom and general high voltage circuits. Features D • High voltage G • Low on-resistance • Fast switching speed • Low gate drive S • Low threshold • SOT23 FLAT package Applications • Active clamping of primary side MOSFETs in 48 volt DC-DC S converters Ordering information D Device Reel size Tape width Quantity G (inches) (mm) per reel ZXMP2120FFTA 7 8 3,000 Top view Device marking 1C4 Issue 1 - January 2007 1 www.zetex.com © Zetex Semiconductors plc 2007 ZXMP2120FF Absolute maximum ratings Parameter Symbol Limit Unit Drain-sourc

See also transistors datasheet: ZXMP10A16K , ZXMP10A17E6 , ZXMP10A17G , ZXMP10A17K , ZXMP10A18G , ZXMP10A18K , ZXMP2120E5 , ZXMP2120FF , 2N7000 , DMC2004DWK , DMC2004LPK , DMC2004VK , DMC2020USD , DMG1016UDW , DMG1016V , DMC3018LSD , DMC3021LK4 .

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