MOSFET Datasheet



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2SK3748
  2SK3748
  2SK3748
  2SK3748
 
2SK3748
  2SK3748
  2SK3748
  2SK3748
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..JFTJ105
K1109 ..KMB7D0DN40Q
KMB7D0DN40QA ..KU310N10P
KU390N10P ..MTB3D0N03ATH8
MTB40N06E3 ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF08N50
SDF08N60 ..SFP9Z34
SFR2955 ..SMG2306NE
SMG2310A ..SML40J93
SML40L57 ..SPA08N80C3
SPA11N60C3 ..SSDF9504
SSE110N03-03P ..SSM3J16TE
SSM3J304T ..SSM6P05FU
SSM6P09FU ..STB19NF20
STB200N4F3 ..STD3N25-1
STD3N25T4 ..STF26NM60N
STF28NM50N ..STK830P
STK900 ..STP14NK50Z
STP14NK60Z ..STP5N30LFI
STP5N50 ..STS4DNFS30L
STS4DPF20L ..STU616S
STU618S ..TF252TH
TF256 ..TK80S04K3L
TK80S06K3L ..TPCA8046-H
TPCA8047-H ..UP672
UP9971 ..WTC2305
WTC2305DS ..ZXMP10A16K
ZXMP10A17E6 ..ZXMS6006SG
 
2SK3748 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK3748 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK3748

Type of 2SK3748 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 65

Maximum drain-source voltage |Uds|, V: 1500

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SK3748 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 5

Package: TO3PML

Equivalent transistors for 2SK3748 - Cross-Reference Search

2SK3748 PDF doc:

1.1. 2sk3748.pdf Size:52K _sanyo

2SK3748
2SK3748
Ordering number : ENN8250A 2SK3748 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3748 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID* 4 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 8 A 3.0 W Allowable Power Dissipation PD Tc=25C65 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 170 mJ Avalanche Current *2 IAV 4 A *Shows chip capability *1 VDD=99V, L=20mH, IAV=4A *2 L?20mH, single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V

4.1. 2sk3743.pdf Size:296K _toshiba

2SK3748
2SK3748
2SK3743 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3743 Unit: mm Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.29 ? (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDSS = 450 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k?) VDGR 450 V Gate-source voltage VGSS 30 V DC (Note 1) ID 13 Drain current A Pulse (Note 1) IDP 52 Drain power dissipation (Tc = 25C) PD 40 W JEDEC ? Single pulse avalanche energy EAS 350 mJ (Note 2) JEITA SC-67 Avalanche current IAR 13 A TOSHIBA 2-10R1B Repetitive avalanche energy (Note 3) EAR 4.0 mJ Weight: 1.9 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuously under heavy loads (e.g. the applicat

4.2. 2sk3742.pdf Size:219K _toshiba

2SK3748
2SK3748
2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSIV) 2SK3742 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 ? (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement model: Vth = 4.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 5 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 15 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 45 W Single pulse avalanche energy EAS 595 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight: 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continuou

4.3. 2sk3745ls.pdf Size:51K _sanyo

2SK3748
2SK3748
Ordering number : EN8635 2SK3745LS N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3745LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Micaless package facilitating mounting. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID* 2 A Drain Current (Pulse) IDP 4 A 2.0 W Allowable Power Dissipation PD Tc=25C35 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Enargy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A *Shows chip capability *1 VDD=99V, L=20mH, IAV=2A *2 L?20mH, single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 1500 V Zero

4.4. 2sk3746.pdf Size:51K _sanyo

2SK3748
2SK3748
Ordering number : ENN8283 2SK3746 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3746 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 2 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 4 A 2.5 W Allowable Power Dissipation PD Tc=25C110 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A *1 VDD=99V, L=20mH, IAV=2A *2 L?20mH, Single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 1500 V Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS

4.5. 2sk3747.pdf Size:52K _sanyo

2SK3748
2SK3748
Ordering number : ENN7767A 2SK3747 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3747 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 2 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 4 A 3.0 W Allowable Power Dissipation PD Tc=25C50 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A *1 VDD=99V, L=20mH, IAV=2A *2 L?20mH, single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 150

4.6. 2sk3740.pdf Size:169K _nec

2SK3748
2SK3748
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3740 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3740 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching characteristics, designed for high voltage 2SK3740-ZK TO-263 (MP-25ZK) applications such as lamp drive, DC/DC converter, and actuator driver. (TO-263) FEATURES Gate voltage rating: 30 V Low on-state resistance RDS(on) = 160 m? MAX. (VGS = 10 V, ID = 10 A) Low gate charge QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A) Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 250 V Gate to Source Voltage (VDS = 0 V) VGSS 30 V Drain Current (DC) (TC = 25C) ID(DC) 20 A Drain Current (pulse) Note1 ID(pulse) 60 A Total Power Dissipation PT1 1.5 W Total Power Dissipation (TC = 25C) PT2 100 W Channel Temperature Tch 150 C Storage Temperatu

4.7. 2sk3749.pdf Size:103K _nec

2SK3748
2SK3748
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3749 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because 2.1 0.1 1.25 0.1 it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an 2 actuator for low-current portable systems such as headphone stereos and video cameras. 1 3 FEATURES Marking Gate can be driven by 2.5 V Because of its high input impedance, theres no need to consider drive current ORDERING INFORMATION 1 : Source PART NUMBER PACKAGE 2 : Gate 3 : Drain 2SK3749 SC-70 (SSP) Marking: G27 EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 50 V Drain Gate to Source Voltage (VDS = 0 V) VGSS 7.0 V Drain Current (DC) ID(DC) 100 mA Body Drain Current (pulse) Note ID(pulse) 200 mA Gate Diode Total Power Dissipation PT 150 mW Channel Tem

4.8. 2sk374.pdf Size:31K _panasonic

2SK3748
2SK3748
Silicon Junction FETs (Small Signal) 2SK374 2SK374 Silicon N-Channel Junction Unit : mm For low-frequency amplification +0.2 2.8 0.3 For switching +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low noise-figure (NF) High gate-drain voltage VGDO 3 Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available. Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 0.1 to 0.3 Drain-Source voltage VDSX 55 V 0.4 0.2 Gate-Drain voltage VGDO 55 V Gate-Source voltage VGSO 55 V 1 : Source JEDEC : TO-236 Drain current ID 30 mA 2 : Drain EIAJ : SC-59 3 : Gate Mini Type Package (3-pin) Gate current IG 10 mA Allowable power dissipation PD 200 mW Channel temperature Tch 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS * VDS=10V, VGS= 0 1 20 mA Gate-Source leakage current IGSS VGS=

See also transistors datasheet: 2SK3557 , 2SK3666 , 2SK3703 , 2SK3704 , 2SK3708 , 2SK3745LS , 2SK3746 , 2SK3747 , 2SK163 , 2SK3796 , 2SK3816 , 2SK3817 , 2SK3820 , 2SK4043LS , 2SK4065 , 2SK4066 , 2SK4085LS .

Keywords

 2SK3748 Datasheet  2SK3748 Datenblatt  2SK3748 RoHS  2SK3748 Distributor
 2SK3748 Application Notes  2SK3748 Component  2SK3748 Circuit  2SK3748 Schematic
 2SK3748 Equivalent  2SK3748 Cross Reference  2SK3748 Data Sheet  2SK3748 Fiche Technique

 

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