MOSFET Datasheet


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2SK3748
  2SK3748
  2SK3748
 
2SK3748
  2SK3748
  2SK3748
 
2SK3748
  2SK3748
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..MTP20N15E
MTP2301N3 ..NTB5405N
NTB5426N ..NTP6411AN
NTP6412AN ..PHP6ND50E
PHP79NQ08LT ..PSMN085-150K
PSMN0R9-25YLC ..RF1S25N06SM
RF1S30N06LESM ..RJK03B8DPA
RJK03B9DPA ..RQJ0301HGDQS
RQJ0302NGDQA ..SDF120JAB-D
SDF120JAB-S ..SFT1345
SFT1350 ..SMG5403
SMG5406 ..SML50J77
SML50L37 ..SPI11N65C3
SPI12N50C3 ..SSG4934N
SSG4935P ..SSM3K35FS
SSM3K35MFV ..SSR1N60A
SSR2N60A ..STD10NM50N
STD10NM60N ..STE100N20
STE140NF20D ..STI23NM60ND
STI24NM60N ..STP18NM80
STP190N55LF3 ..STP60NF06L
STP60NF10 ..STV40N10
STV4N100 ..TK100F04K3
TK100F04K3L ..TPC6006-H
TPC6007-H ..TPCA8088
TPCA8101 ..UT2327
UT2955 ..WTN9575
WTN9973 ..ZXMP6A16K
ZXMP6A17DN8 ..ZXMS6006SG
 
2SK3748 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK3748 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK3748

Type of 2SK3748 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 3

Maximum drain-source voltage |Uds|, V: 1500

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C:

Rise Time of 2SK3748 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 5

Package:

Equivalent transistors for 2SK3748

2SK3748 PDF doc:

1.1. 2sk3748.pdf Size:52K _sanyo

2SK3748
2SK3748
Ordering number : ENN8250A 2SK3748 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3748 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID* 4 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 8 A 3.0 W Allowable Power Dissipation PD Tc=25C65 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 170 mJ Avalanche Current *2 IAV 4 A *Shows chip capability *1 VDD=99V, L=20mH, IAV=4A *2 L?20mH, single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V

4.1. 2sk3743.pdf Size:296K _toshiba

2SK3748
2SK3748
2SK3743 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3743 Unit: mm Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.29 ? (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDSS = 450 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k?) VDGR 450 V Gate-source voltage VGSS 30 V DC (Note 1) ID 13 Drain current A Pulse (Note 1) IDP 52 Drain power dissipation (Tc = 25C) PD 40 W JEDEC ? Single pulse avalanche energy EAS 350 mJ (Note 2) JEITA SC-67 Avalanche current IAR 13 A TOSHIBA 2-10R1B Repetitive avalanche energy (Note 3) EAR 4.0 mJ Weight: 1.9 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuously under heavy loads (e.g. the applicat

4.2. 2sk3742.pdf Size:219K _toshiba

2SK3748
2SK3748
2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSIV) 2SK3742 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 ? (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement model: Vth = 4.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 5 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 15 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 45 W Single pulse avalanche energy EAS 595 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight: 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continuou

4.3. 2sk3745ls.pdf Size:51K _sanyo

2SK3748
2SK3748
Ordering number : EN8635 2SK3745LS N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3745LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Micaless package facilitating mounting. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID* 2 A Drain Current (Pulse) IDP 4 A 2.0 W Allowable Power Dissipation PD Tc=25C35 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Enargy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A *Shows chip capability *1 VDD=99V, L=20mH, IAV=2A *2 L?20mH, single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 1500 V Zero

4.4. 2sk3746.pdf Size:51K _sanyo

2SK3748
2SK3748
Ordering number : ENN8283 2SK3746 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3746 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 2 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 4 A 2.5 W Allowable Power Dissipation PD Tc=25C110 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A *1 VDD=99V, L=20mH, IAV=2A *2 L?20mH, Single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 1500 V Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS

4.5. 2sk3747.pdf Size:52K _sanyo

2SK3748
2SK3748
Ordering number : ENN7767A 2SK3747 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3747 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 2 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 4 A 3.0 W Allowable Power Dissipation PD Tc=25C50 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A *1 VDD=99V, L=20mH, IAV=2A *2 L?20mH, single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 150

4.6. 2sk3740.pdf Size:169K _nec

2SK3748
2SK3748
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3740 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3740 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching characteristics, designed for high voltage 2SK3740-ZK TO-263 (MP-25ZK) applications such as lamp drive, DC/DC converter, and actuator driver. (TO-263) FEATURES Gate voltage rating: 30 V Low on-state resistance RDS(on) = 160 m? MAX. (VGS = 10 V, ID = 10 A) Low gate charge QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A) Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 250 V Gate to Source Voltage (VDS = 0 V) VGSS 30 V Drain Current (DC) (TC = 25C) ID(DC) 20 A Drain Current (pulse) Note1 ID(pulse) 60 A Total Power Dissipation PT1 1.5 W Total Power Dissipation (TC = 25C) PT2 100 W Channel Temperature Tch 150 C Storage Temperatu

4.7. 2sk3749.pdf Size:103K _nec

2SK3748
2SK3748
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3749 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because 2.1 0.1 1.25 0.1 it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an 2 actuator for low-current portable systems such as headphone stereos and video cameras. 1 3 FEATURES Marking Gate can be driven by 2.5 V Because of its high input impedance, theres no need to consider drive current ORDERING INFORMATION 1 : Source PART NUMBER PACKAGE 2 : Gate 3 : Drain 2SK3749 SC-70 (SSP) Marking: G27 EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 50 V Drain Gate to Source Voltage (VDS = 0 V) VGSS 7.0 V Drain Current (DC) ID(DC) 100 mA Body Drain Current (pulse) Note ID(pulse) 200 mA Gate Diode Total Power Dissipation PT 150 mW Channel Tem

4.8. 2sk374.pdf Size:31K _panasonic

2SK3748
2SK3748
Silicon Junction FETs (Small Signal) 2SK374 2SK374 Silicon N-Channel Junction Unit : mm For low-frequency amplification +0.2 2.8 0.3 For switching +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low noise-figure (NF) High gate-drain voltage VGDO 3 Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available. Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 0.1 to 0.3 Drain-Source voltage VDSX 55 V 0.4 0.2 Gate-Drain voltage VGDO 55 V Gate-Source voltage VGSO 55 V 1 : Source JEDEC : TO-236 Drain current ID 30 mA 2 : Drain EIAJ : SC-59 3 : Gate Mini Type Package (3-pin) Gate current IG 10 mA Allowable power dissipation PD 200 mW Channel temperature Tch 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS * VDS=10V, VGS= 0 1 20 mA Gate-Source leakage current IGSS VGS=

See also transistors datasheet: 2SK3557 , 2SK3666 , 2SK3703 , 2SK3704 , 2SK3708 , 2SK3745LS , 2SK3746 , 2SK3747 , 2SK163 , 2SK3796 , 2SK3816 , 2SK3817 , 2SK3820 , 2SK4043LS , 2SK4065 , 2SK4066 , 2SK4085LS .

Keywords

 2SK3748 Datasheet  2SK3748 Datenblatt  2SK3748 RoHS  2SK3748 Distributor
 2SK3748 Application Notes  2SK3748 Component  2SK3748 Circuit  2SK3748 Schematic
 2SK3748 Equivalent  2SK3748 Cross Reference  2SK3748 Data Sheet  2SK3748 Fiche Technique

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