MOSFET Datasheet


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2SK3748
  2SK3748
  2SK3748
 
2SK3748
  2SK3748
  2SK3748
 
2SK3748
  2SK3748
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AP22N13GH-HF
AP22T03GH-HF ..AP4224LGM-HF
AP4226AGM ..AP62T03GJ
AP6618GM-HF ..AP9468GJ
AP9468GJ-HF ..AP9972GI-HF
AP9972GP-HF ..APT5019HVR
APT5020BN ..AUIRFI3205
AUIRFIZ34N ..BF256B
BF256C ..BLF6G22L-40P
BLF6G22LS-100 ..BSC084P03NS3EG
BSC084P03NS3G ..BSZ050N03LSG
BSZ050N03MSG ..BUK7507-55B
BUK7508-40B ..BUK9606-55A
BUK9606-55B ..BUZ908
BUZ908D ..CEF08N6A
CEF08N8 ..CEP6186
CEP630N ..DMG4466SSS
DMG4466SSSL ..ECH8655R
ECH8656 ..FDB3632
FDB3632 ..FDD6690A
FDD6760A ..FDMC7696
FDMC7696 ..FDP090N10
FDP090N10 ..FDS4559_F085
FDS4672A ..FDZ391P
FJN598J ..FQD20N06
FQD2N100 ..FQPF85N06
FQPF8N60C ..FRS440R
FRS9130D ..H5N2001LS
H5N2003P ..HAT2064R
HAT2065R ..HUF75329P3
HUF75329S3 ..IPB023N04NG
IPB023N06N3G ..IPD15N06S2L-64
IPD160N04LG ..IPI80N04S3-H4
IPI80N04S4-03 ..IPP90R1K2C3
IPP90R340C3 ..IRF2807ZS
IRF2903Z ..IRF6603
IRF6604 ..IRF7463
IRF7465 ..IRF9543
IRF9610 ..IRFH5025
IRFH5053 ..IRFP150
IRFP150A ..IRFR3707Z
IRFR3707ZC ..IRFS830A
IRFS831 ..IRFW630A
IRFW634A ..IRLB8743
IRLB8748 ..IRLU8259
IRLU8721 ..IXFH20N100P
IXFH20N60 ..IXFK78N50P3
IXFK80N15Q ..IXFR100N25
IXFR102N30P ..IXFX13N100
IXFX140N25T ..IXTA3N60P
IXTA42N15T ..IXTH450P2
IXTH460P2 ..IXTP220N055T
IXTP220N075T ..IXTT24P20
IXTT26N50P ..KF13N50P
KF13N60N ..KMC7D0CN20CA
KMD4D5P30XA ..MCH3374
MCH3375 ..MTB55N03J3
MTB55N03N3 ..MTN2N70FP
MTN2N70I3 ..MTS3572G6
MTW32N20E ..NTD3055L170
NTD40N03R ..NTTFS4824N
NTTFS4928N ..PHW8ND50E
PHW9N60E ..PSMN1R8-30PL
PSMN1R9-25YLC ..RFB18N10CS
RFD10P03L ..RJK0451DPB
RJK0452DPB ..RQK0603CGDQA
RQK0603CGDQS ..SDF150JAB
SDF150NA40HE ..SFW9510
SFW9520 ..SMK0825D
SMK0825D2 ..SML6040AN
SML6040BN ..SPP07N60C3
SPP07N60CFD ..SSH15N55A
SSH15N60 ..SSM5N15FE
SSM5N15FU ..SSS4N80AS
SSS4N90A ..STD12NF06
STD12NF06L ..STE40NK90ZD
STE45N50 ..STK0380D
STK0380F ..STP20NF20
STP20NK50Z ..STP6NK90Z
STP70N10F4 ..STW11NK90Z
STW11NM80 ..TK12E60U
TK12J55D ..TPC8003
TPC8004 ..TPCC8001-H
TPCC8002-H ..UT3458
UT3N01Z ..ZVN2120G
ZVN2535A ..ZXMS6006SG
00000000..ZXMS6006SG
 
2SK3748 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK3748 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK3748

Type of 2SK3748 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 3

Maximum drain-source voltage |Uds|, V: 1500

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C:

Rise Time of 2SK3748 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 5

Package:

Equivalent transistors for 2SK3748

2SK3748 PDF doc:

1.1. 2sk3748.pdf Size:52K _sanyo

2SK3748
2SK3748
Ordering number : ENN8250A 2SK3748 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3748 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID* 4 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 8 A 3.0 W Allowable Power Dissipation PD Tc=25C65 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 170 mJ Avalanche Current *2 IAV 4 A *Shows chip capability *1 VDD=99V, L=20mH, IAV=4A *2 L?20mH, single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V

4.1. 2sk3743.pdf Size:296K _toshiba

2SK3748
2SK3748
2SK3743 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3743 Unit: mm Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.29 ? (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDSS = 450 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k?) VDGR 450 V Gate-source voltage VGSS 30 V DC (Note 1) ID 13 Drain current A Pulse (Note 1) IDP 52 Drain power dissipation (Tc = 25C) PD 40 W JEDEC ? Single pulse avalanche energy EAS 350 mJ (Note 2) JEITA SC-67 Avalanche current IAR 13 A TOSHIBA 2-10R1B Repetitive avalanche energy (Note 3) EAR 4.0 mJ Weight: 1.9 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuously under heavy loads (e.g. the applicat

4.2. 2sk3742.pdf Size:219K _toshiba

2SK3748
2SK3748
2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSIV) 2SK3742 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 ? (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement model: Vth = 4.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 5 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 15 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 45 W Single pulse avalanche energy EAS 595 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight: 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continuou

4.3. 2sk3745ls.pdf Size:51K _sanyo

2SK3748
2SK3748
Ordering number : EN8635 2SK3745LS N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3745LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Micaless package facilitating mounting. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID* 2 A Drain Current (Pulse) IDP 4 A 2.0 W Allowable Power Dissipation PD Tc=25C35 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Enargy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A *Shows chip capability *1 VDD=99V, L=20mH, IAV=2A *2 L?20mH, single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 1500 V Zero

4.4. 2sk3746.pdf Size:51K _sanyo

2SK3748
2SK3748
Ordering number : ENN8283 2SK3746 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3746 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 2 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 4 A 2.5 W Allowable Power Dissipation PD Tc=25C110 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A *1 VDD=99V, L=20mH, IAV=2A *2 L?20mH, Single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 1500 V Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS

4.5. 2sk3747.pdf Size:52K _sanyo

2SK3748
2SK3748
Ordering number : ENN7767A 2SK3747 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3747 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 2 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 4 A 3.0 W Allowable Power Dissipation PD Tc=25C50 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A *1 VDD=99V, L=20mH, IAV=2A *2 L?20mH, single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 150

4.6. 2sk3740.pdf Size:169K _nec

2SK3748
2SK3748
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3740 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3740 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching characteristics, designed for high voltage 2SK3740-ZK TO-263 (MP-25ZK) applications such as lamp drive, DC/DC converter, and actuator driver. (TO-263) FEATURES Gate voltage rating: 30 V Low on-state resistance RDS(on) = 160 m? MAX. (VGS = 10 V, ID = 10 A) Low gate charge QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A) Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 250 V Gate to Source Voltage (VDS = 0 V) VGSS 30 V Drain Current (DC) (TC = 25C) ID(DC) 20 A Drain Current (pulse) Note1 ID(pulse) 60 A Total Power Dissipation PT1 1.5 W Total Power Dissipation (TC = 25C) PT2 100 W Channel Temperature Tch 150 C Storage Temperatu

4.7. 2sk3749.pdf Size:103K _nec

2SK3748
2SK3748
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3749 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because 2.1 0.1 1.25 0.1 it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an 2 actuator for low-current portable systems such as headphone stereos and video cameras. 1 3 FEATURES Marking Gate can be driven by 2.5 V Because of its high input impedance, theres no need to consider drive current ORDERING INFORMATION 1 : Source PART NUMBER PACKAGE 2 : Gate 3 : Drain 2SK3749 SC-70 (SSP) Marking: G27 EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 50 V Drain Gate to Source Voltage (VDS = 0 V) VGSS 7.0 V Drain Current (DC) ID(DC) 100 mA Body Drain Current (pulse) Note ID(pulse) 200 mA Gate Diode Total Power Dissipation PT 150 mW Channel Tem

4.8. 2sk374.pdf Size:31K _panasonic

2SK3748
2SK3748
Silicon Junction FETs (Small Signal) 2SK374 2SK374 Silicon N-Channel Junction Unit : mm For low-frequency amplification +0.2 2.8 0.3 For switching +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low noise-figure (NF) High gate-drain voltage VGDO 3 Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available. Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 0.1 to 0.3 Drain-Source voltage VDSX 55 V 0.4 0.2 Gate-Drain voltage VGDO 55 V Gate-Source voltage VGSO 55 V 1 : Source JEDEC : TO-236 Drain current ID 30 mA 2 : Drain EIAJ : SC-59 3 : Gate Mini Type Package (3-pin) Gate current IG 10 mA Allowable power dissipation PD 200 mW Channel temperature Tch 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS * VDS=10V, VGS= 0 1 20 mA Gate-Source leakage current IGSS VGS=

See also transistors datasheet: 2SK3557 , 2SK3666 , 2SK3703 , 2SK3704 , 2SK3708 , 2SK3745LS , 2SK3746 , 2SK3747 , 2SK163 , 2SK3796 , 2SK3816 , 2SK3817 , 2SK3820 , 2SK4043LS , 2SK4065 , 2SK4066 , 2SK4085LS .

Keywords

 2SK3748 Datasheet  2SK3748 Datenblatt  2SK3748 RoHS  2SK3748 Distributor
 2SK3748 Application Notes  2SK3748 Component  2SK3748 Circuit  2SK3748 Schematic
 2SK3748 Equivalent  2SK3748 Cross Reference  2SK3748 Data Sheet  2SK3748 Fiche Technique

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