MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SK3748
  2SK3748
  2SK3748
 
2SK3748
  2SK3748
  2SK3748
 
2SK3748
  2SK3748
 
 
List
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK653R2-55C
BUK653R3-30C ..BUK9213-30A
BUK9214-30A ..BUZ50A
BUZ50A-220M ..CED20P06
CED20P10 ..CEP02N6G
CEP02N7G ..CPH3351
CPH3355 ..DMP2104V
DMP210DUDJ ..FCPF7N60NT
FCPF9N60NT ..FDD18N20LZ
FDD20AN06A0_F085 ..FDMA3023PZ
FDMA3028N ..FDMS86105
FDMS86200 ..FDPF5N60NZ
FDPF680N10T ..FDS8978
FDS8978 ..FQB25N33TM_F085
FQB27P06 ..FQP9N90C
FQP9P25 ..FRM130D
FRM130H ..GWM160-0055X1-SL
GWM160-0055X1-SMD ..HAT1047R
HAT1047RJ ..HEPF2007A
HIRF630 ..IPA057N08N3G
IPA075N15N3G ..IPB80N04S3-03
IPB80N04S3-04 ..IPI100P03P3L-04
IPI110N20N3G ..IPP60R250CP
IPP60R280C6 ..IRF1010Z
IRF1010ZL ..IRF610S
IRF611 ..IRF7328
IRF7329 ..IRF840S
IRF841 ..IRFBL12N50A
IRFD014 ..IRFL110
IRFL210 ..IRFPG30
IRFPG40 ..IRFS520
IRFS520A ..IRFU310
IRFU310A ..IRL3705ZL
IRL3705ZS ..IRLR8729
IRLR8743 ..IXFE48N50Q
IXFE48N50QD2 ..IXFK240N15T2
IXFK24N100 ..IXFN48N60P
IXFN50N50 ..IXFT70N20Q3
IXFT74N20 ..IXTA15P15T
IXTA160N04T2 ..IXTH220N075T
IXTH22N50P ..IXTN90P20P
IXTP01N100D ..IXTQ40N50Q
IXTQ42N25P ..IXTZ35N25MB
IXTZ42N20MA ..KMA2D7DP20X
KMA2D8P20X ..KTK5132S
KTK5132U ..NDB4060
NDB4060L ..NTD4855N
NTD4856N ..NTUD3127C
NTUD3169CZ ..PHX7N60E
PHX8N50E ..PSMN2R7-30PL
PSMN2R8-40PS ..RFD7N10LESM
RFD8P05 ..RJK1052DPB
RJK1053DPB ..RSD175N10
RSD200N05 ..SDF3N90
SDF40N50JAM ..SGSP321
SGSP322 ..SML1004RGN
SML1004RKN ..SMN03T80IS
SMN0470F ..SSD15N10
SSD20N06-90D ..SSM3J09FU
SSM3J108TU ..SSM6N04FU
SSM6N05FU ..STB14NM50N
STB150NF04 ..STD38NH02L
STD3LN62K3 ..STF35N65M5
STF3LN62K3 ..STL60N3LLH5
STL65DN3LLH5 ..STP38N06
STP3LN62K3 ..STP9NK70Z
STP9NK70ZFP ..STW45NM60D
STW47NM60ND ..TK3A60DA
TK3A65D ..TPC8109
TPC8110 ..TPCP8301
TPCP8302 ..WTD9435
WTD9575 ..ZXMP2120FF
ZXMP2120G4 ..ZXMS6006SG
 
2SK3748 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK3748 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK3748

Type of 2SK3748 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 3

Maximum drain-source voltage |Uds|, V: 1500

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C:

Rise Time of 2SK3748 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 5

Package:

Equivalent transistors for 2SK3748

2SK3748 PDF doc:

1.1. 2sk3748.pdf Size:52K _sanyo

2SK3748
2SK3748
Ordering number : ENN8250A 2SK3748 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3748 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID* 4 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 8 A 3.0 W Allowable Power Dissipation PD Tc=25C65 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 170 mJ Avalanche Current *2 IAV 4 A *Shows chip capability *1 VDD=99V, L=20mH, IAV=4A *2 L?20mH, single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V

4.1. 2sk3743.pdf Size:296K _toshiba

2SK3748
2SK3748
2SK3743 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3743 Unit: mm Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.29 ? (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDSS = 450 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k?) VDGR 450 V Gate-source voltage VGSS 30 V DC (Note 1) ID 13 Drain current A Pulse (Note 1) IDP 52 Drain power dissipation (Tc = 25C) PD 40 W JEDEC ? Single pulse avalanche energy EAS 350 mJ (Note 2) JEITA SC-67 Avalanche current IAR 13 A TOSHIBA 2-10R1B Repetitive avalanche energy (Note 3) EAR 4.0 mJ Weight: 1.9 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuously under heavy loads (e.g. the applicat

4.2. 2sk3742.pdf Size:219K _toshiba

2SK3748
2SK3748
2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSIV) 2SK3742 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 ? (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement model: Vth = 4.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 5 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 15 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 45 W Single pulse avalanche energy EAS 595 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight: 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continuou

4.3. 2sk3746.pdf Size:51K _sanyo

2SK3748
2SK3748
Ordering number : ENN8283 2SK3746 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3746 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 2 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 4 A 2.5 W Allowable Power Dissipation PD Tc=25C110 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A *1 VDD=99V, L=20mH, IAV=2A *2 L?20mH, Single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 1500 V Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS

4.4. 2sk3745ls.pdf Size:51K _sanyo

2SK3748
2SK3748
Ordering number : EN8635 2SK3745LS N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3745LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Micaless package facilitating mounting. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID* 2 A Drain Current (Pulse) IDP 4 A 2.0 W Allowable Power Dissipation PD Tc=25C35 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Enargy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A *Shows chip capability *1 VDD=99V, L=20mH, IAV=2A *2 L?20mH, single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 1500 V Zero

4.5. 2sk3747.pdf Size:52K _sanyo

2SK3748
2SK3748
Ordering number : ENN7767A 2SK3747 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3747 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 2 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 4 A 3.0 W Allowable Power Dissipation PD Tc=25C50 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A *1 VDD=99V, L=20mH, IAV=2A *2 L?20mH, single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 150

4.6. 2sk3740.pdf Size:169K _nec

2SK3748
2SK3748
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3740 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3740 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching characteristics, designed for high voltage 2SK3740-ZK TO-263 (MP-25ZK) applications such as lamp drive, DC/DC converter, and actuator driver. (TO-263) FEATURES Gate voltage rating: 30 V Low on-state resistance RDS(on) = 160 m? MAX. (VGS = 10 V, ID = 10 A) Low gate charge QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A) Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 250 V Gate to Source Voltage (VDS = 0 V) VGSS 30 V Drain Current (DC) (TC = 25C) ID(DC) 20 A Drain Current (pulse) Note1 ID(pulse) 60 A Total Power Dissipation PT1 1.5 W Total Power Dissipation (TC = 25C) PT2 100 W Channel Temperature Tch 150 C Storage Temperatu

4.7. 2sk3749.pdf Size:103K _nec

2SK3748
2SK3748
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3749 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because 2.1 0.1 1.25 0.1 it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an 2 actuator for low-current portable systems such as headphone stereos and video cameras. 1 3 FEATURES Marking Gate can be driven by 2.5 V Because of its high input impedance, theres no need to consider drive current ORDERING INFORMATION 1 : Source PART NUMBER PACKAGE 2 : Gate 3 : Drain 2SK3749 SC-70 (SSP) Marking: G27 EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 50 V Drain Gate to Source Voltage (VDS = 0 V) VGSS 7.0 V Drain Current (DC) ID(DC) 100 mA Body Drain Current (pulse) Note ID(pulse) 200 mA Gate Diode Total Power Dissipation PT 150 mW Channel Tem

4.8. 2sk374.pdf Size:31K _panasonic

2SK3748
2SK3748
Silicon Junction FETs (Small Signal) 2SK374 2SK374 Silicon N-Channel Junction Unit : mm For low-frequency amplification +0.2 2.8 0.3 For switching +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low noise-figure (NF) High gate-drain voltage VGDO 3 Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available. Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 0.1 to 0.3 Drain-Source voltage VDSX 55 V 0.4 0.2 Gate-Drain voltage VGDO 55 V Gate-Source voltage VGSO 55 V 1 : Source JEDEC : TO-236 Drain current ID 30 mA 2 : Drain EIAJ : SC-59 3 : Gate Mini Type Package (3-pin) Gate current IG 10 mA Allowable power dissipation PD 200 mW Channel temperature Tch 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS * VDS=10V, VGS= 0 1 20 mA Gate-Source leakage current IGSS VGS=

See also transistors datasheet: 2SK3557 , 2SK3666 , 2SK3703 , 2SK3704 , 2SK3708 , 2SK3745LS , 2SK3746 , 2SK3747 , 2SK163 , 2SK3796 , 2SK3816 , 2SK3817 , 2SK3820 , 2SK4043LS , 2SK4065 , 2SK4066 , 2SK4085LS .

Keywords

 2SK3748 Datasheet  2SK3748 Datenblatt  2SK3748 RoHS  2SK3748 Distributor
 2SK3748 Application Notes  2SK3748 Component  2SK3748 Circuit  2SK3748 Schematic
 2SK3748 Equivalent  2SK3748 Cross Reference  2SK3748 Data Sheet  2SK3748 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages