MOSFET Datasheet


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2SK3748
  2SK3748
  2SK3748
 
2SK3748
  2SK3748
  2SK3748
 
2SK3748
  2SK3748
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP02N60J
AP02N60J-H ..AP2310AGN-HF
AP2310CGN-HF ..AP4416GH
AP4417GH ..AP6903GH-HF
AP6904GH-HF ..AP9560GS-HF
AP9561AGH-HF ..AP9977GM
AP9978AGP-HF ..APT6015JVR
APT6015LVR ..AUIRFR2307Z
AUIRFR2405 ..BF900
BF901 ..BLF6G38-50
BLF6G38LS-100 ..BSC152N10NSFG
BSC159N10LSFG ..BSZ180P03NS3EG
BSZ180P03NS3G ..BUK7528-55A
BUK752R3-40C ..BUK9620-55
BUK9620-55A ..CEB02N7G
CEB02N9 ..CEF85N75
CEFF634 ..CEPF640
CES2301 ..DMN2004K
DMN2004TK ..EMH2408
EMH2409 ..FDB7030L
FDB7045L ..FDD8451
FDD8453LZ ..FDMC86520L
FDMC8878 ..FDP22N50N
FDP24N40 ..FDS6614A
FDS6630A ..FK16SM-5
FK16SM-6 ..FQD6N50C
FQD7N10L ..FQT4N25
FQT5P10 ..FS3KM-10
FSF055D ..H5N2522LS
H5N2801P ..HAT2129H
HAT2131R ..HUF75345G3
HUF75345P3 ..IPB054N06N3G
IPB054N08N3G ..IPD30N08S2L-21
IPD30N10S3L-34 ..IPP015N04NG
IPP023N04NG ..IPW50R199CP
IPW50R250CP ..IRF350
IRF3515L ..IRF6637
IRF6638 ..IRF750A
IRF7521D1 ..IRF9Z10
IRF9Z12 ..IRFH7932
IRFH7934 ..IRFP245
IRFP250 ..IRFR9012
IRFR9014 ..IRFS9521
IRFS9522 ..IRFY340C
IRFY430 ..IRLI3803
IRLI510A ..IRLZ24NS
IRLZ30 ..IXFH28N50F
IXFH28N50Q ..IXFL60N60
IXFL60N80P ..IXFR24N50Q
IXFR24N80P ..IXFX24N90Q
IXFX250N10P ..IXTA76N25T
IXTA76P10T ..IXTH6N120
IXTH6N150 ..IXTP32N20T
IXTP32P05T ..IXTT72N20
IXTT74N20P ..KF3N80F
KF3N80I ..KP504D
KP504E ..MCH6444
MCH6445 ..MTBA6C12J4
MTBB0P10J3 ..MTN3820F3
MTN3820J3 ..NDB6050
NDB6050L ..NTD4965N
NTD4969N ..NVD5863NL
NVD5865NL ..PMBFJ110
PMBFJ111 ..PSMN3R7-25YLC
PSMN3R7-30YLC ..RFD3055LE
RFD3055LESM ..RJK1008DPN
RJK1008DPP ..RSD050N06
RSD050N10 ..SDF320JDA
SDF340JAA ..SGSP222
SGSP230 ..SMK1430DI
SMK1430F ..SML60S18
SML60T38 ..SPP24N60C3
SPP24N60CFD ..SSH60N06
SSH60N06A ..SSM6J412TU
SSM6J501NU ..SSU2N60A
SSU3055A ..STD17N06L
STD17N06L-1 ..STF12NK65Z
STF12NM50ND ..STK4N30
STK4N30L ..STP25N06
STP25N06FI ..STP80N20M5
STP80N70F4 ..STW17N62K3
STW18NM60N ..TK15A60U
TK15D60U ..TPC8036-H
TPC8037-H ..TPCF8001
TPCF8002 ..UT60N03
UT60T03 ..ZVN4525Z
ZVNL110A ..ZXMS6006SG
 
2SK3748 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK3748 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK3748

Type of 2SK3748 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 3

Maximum drain-source voltage |Uds|, V: 1500

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C:

Rise Time of 2SK3748 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 5

Package:

Equivalent transistors for 2SK3748

2SK3748 PDF doc:

1.1. 2sk3748.pdf Size:52K _sanyo

2SK3748
2SK3748
Ordering number : ENN8250A 2SK3748 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3748 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID* 4 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 8 A 3.0 W Allowable Power Dissipation PD Tc=25C65 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 170 mJ Avalanche Current *2 IAV 4 A *Shows chip capability *1 VDD=99V, L=20mH, IAV=4A *2 L?20mH, single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V

4.1. 2sk3743.pdf Size:296K _toshiba

2SK3748
2SK3748
2SK3743 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3743 Unit: mm Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.29 ? (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDSS = 450 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k?) VDGR 450 V Gate-source voltage VGSS 30 V DC (Note 1) ID 13 Drain current A Pulse (Note 1) IDP 52 Drain power dissipation (Tc = 25C) PD 40 W JEDEC ? Single pulse avalanche energy EAS 350 mJ (Note 2) JEITA SC-67 Avalanche current IAR 13 A TOSHIBA 2-10R1B Repetitive avalanche energy (Note 3) EAR 4.0 mJ Weight: 1.9 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuously under heavy loads (e.g. the applicat

4.2. 2sk3742.pdf Size:219K _toshiba

2SK3748
2SK3748
2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSIV) 2SK3742 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 ? (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement model: Vth = 4.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 5 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 15 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 45 W Single pulse avalanche energy EAS 595 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight: 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continuou

4.3. 2sk3745ls.pdf Size:51K _sanyo

2SK3748
2SK3748
Ordering number : EN8635 2SK3745LS N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3745LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Micaless package facilitating mounting. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID* 2 A Drain Current (Pulse) IDP 4 A 2.0 W Allowable Power Dissipation PD Tc=25C35 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Enargy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A *Shows chip capability *1 VDD=99V, L=20mH, IAV=2A *2 L?20mH, single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 1500 V Zero

4.4. 2sk3746.pdf Size:51K _sanyo

2SK3748
2SK3748
Ordering number : ENN8283 2SK3746 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3746 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 2 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 4 A 2.5 W Allowable Power Dissipation PD Tc=25C110 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A *1 VDD=99V, L=20mH, IAV=2A *2 L?20mH, Single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 1500 V Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS

4.5. 2sk3747.pdf Size:52K _sanyo

2SK3748
2SK3748
Ordering number : ENN7767A 2SK3747 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3747 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 2 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 4 A 3.0 W Allowable Power Dissipation PD Tc=25C50 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A *1 VDD=99V, L=20mH, IAV=2A *2 L?20mH, single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 150

4.6. 2sk3740.pdf Size:169K _nec

2SK3748
2SK3748
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3740 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3740 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching characteristics, designed for high voltage 2SK3740-ZK TO-263 (MP-25ZK) applications such as lamp drive, DC/DC converter, and actuator driver. (TO-263) FEATURES Gate voltage rating: 30 V Low on-state resistance RDS(on) = 160 m? MAX. (VGS = 10 V, ID = 10 A) Low gate charge QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A) Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 250 V Gate to Source Voltage (VDS = 0 V) VGSS 30 V Drain Current (DC) (TC = 25C) ID(DC) 20 A Drain Current (pulse) Note1 ID(pulse) 60 A Total Power Dissipation PT1 1.5 W Total Power Dissipation (TC = 25C) PT2 100 W Channel Temperature Tch 150 C Storage Temperatu

4.7. 2sk3749.pdf Size:103K _nec

2SK3748
2SK3748
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3749 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because 2.1 0.1 1.25 0.1 it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an 2 actuator for low-current portable systems such as headphone stereos and video cameras. 1 3 FEATURES Marking Gate can be driven by 2.5 V Because of its high input impedance, theres no need to consider drive current ORDERING INFORMATION 1 : Source PART NUMBER PACKAGE 2 : Gate 3 : Drain 2SK3749 SC-70 (SSP) Marking: G27 EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 50 V Drain Gate to Source Voltage (VDS = 0 V) VGSS 7.0 V Drain Current (DC) ID(DC) 100 mA Body Drain Current (pulse) Note ID(pulse) 200 mA Gate Diode Total Power Dissipation PT 150 mW Channel Tem

4.8. 2sk374.pdf Size:31K _panasonic

2SK3748
2SK3748
Silicon Junction FETs (Small Signal) 2SK374 2SK374 Silicon N-Channel Junction Unit : mm For low-frequency amplification +0.2 2.8 0.3 For switching +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low noise-figure (NF) High gate-drain voltage VGDO 3 Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available. Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 0.1 to 0.3 Drain-Source voltage VDSX 55 V 0.4 0.2 Gate-Drain voltage VGDO 55 V Gate-Source voltage VGSO 55 V 1 : Source JEDEC : TO-236 Drain current ID 30 mA 2 : Drain EIAJ : SC-59 3 : Gate Mini Type Package (3-pin) Gate current IG 10 mA Allowable power dissipation PD 200 mW Channel temperature Tch 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS * VDS=10V, VGS= 0 1 20 mA Gate-Source leakage current IGSS VGS=

See also transistors datasheet: 2SK3557 , 2SK3666 , 2SK3703 , 2SK3704 , 2SK3708 , 2SK3745LS , 2SK3746 , 2SK3747 , 2SK163 , 2SK3796 , 2SK3816 , 2SK3817 , 2SK3820 , 2SK4043LS , 2SK4065 , 2SK4066 , 2SK4085LS .

Keywords

 2SK3748 Datasheet  2SK3748 Datenblatt  2SK3748 RoHS  2SK3748 Distributor
 2SK3748 Application Notes  2SK3748 Component  2SK3748 Circuit  2SK3748 Schematic
 2SK3748 Equivalent  2SK3748 Cross Reference  2SK3748 Data Sheet  2SK3748 Fiche Technique

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