2SK3796 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK3796

Type of 2SK3796 transistor:

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.003

Maximum junction temperature (Tj), °C:

Rise Time of 2SK3796 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0

Package:

Equivalent transistors for 2SK3796

2SK3796 PDF documents for downloads:

4.1. 2sk3798.pdf Size:222K _toshiba

2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3798 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.5? (typ.) • High forward transfer admittance: |Yfs| = 2.8 S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 720 V) • Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 4 Drain current A Pulse (t = 1 ms) IDP 12 (Note 1) 1: Gate 2: Drain Drain power dissipation (Tc = 25°C) PD 40 W 3: Source Single pulse avalanche energy EAS 345 mJ (Note 2) Avalanche current IAR 4 A JEDEC ? Repetitive avalanche energy (Note 3) EAR 4.0 mJ JEITA SC-67 Channel temperature Tch 150 °C TOSHIBA 2-10U1B Storage temperature range Tstg -55~150 °C Weight : 1.7 g (typ.) Thermal Characteristics 2

4.2. 2sk3797.pdf Size:184K _toshiba

2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3797 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.32 ? (typ.) • High forward transfer admittance: |Yfs| = 7.5 S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS ±30 V 1: Gate DC (Note 1) ID 13 2: Drain Drain current A 3: Source Pulse (t = 1 ms) IDP 52 (Note 1) Drain power dissipation (Tc = 25°C) JEDEC ? PD 50 W Single pulse avalanche energy JEITA SC-67 EAS 1033 mJ (Note 2) TOSHIBA 2-10U1B Avalanche current IAR 13 A Weight: 1.7 g (typ.) Repetitive avalanche energy (Note 3) EAR 5.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using c

4.3. 2sk3799.pdf Size:221K _toshiba

2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSIV) 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.0 ? (typ.) High forward transfer admittance : |Y | = 6.0 S (typ.) fs Low leakage current : I = 100?A (max) (V = 720 V) DSS DS Enhancement model : V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 8 A Drain current Pulse (Note 1) IDP 24 A 1. Gate Drain power dissipation PD 50 W 2. Drain 3. Source Single pulse avalanche energy EAS 1080 mJ (Note 2) JEDEC — Avalanche current IAR 8 A Repetitive avalanche energy (Note 3) EAR 5 mJ JEITA SC-67 Channel temperature Tch 150 °C TOSHIBA 2-10U1B Storage temperature range Tstg -55~150 °C Weight: 1.7 g (typ.) 2 Thermal Characteristics Characteris

4.4. 2sk3794.pdf Size:151K _nec

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3794 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3794 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. TO-251 (MP-3) 2SK3794 TO-252 (MP-3Z) 2SK3794-Z FEATURES • Low On-state resistance (TO-251) RDS(on)1 = 44 m? MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 m? MAX. (VGS = 4.0 V, ID = 10 A) • Low C iss: C iss = 760 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±20 A Drain Current (pulse) Note1 ID(pulse) ±50 A Total Power Dissipation (TC = 25°C) PT1 30 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to +150 °C Single Avalanche Current Note2 IAS 15 A S

4.5. 2sk3793.pdf Size:175K _nec

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3793 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3793 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3793 Isolated TO-220 FEATURES • Super low on-state resistance (Isolated TO-220) RDS(on)1 = 125 m? MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 148 m? MAX. (VGS = 4.5 V, ID = 6 A) • Low C iss: C iss = 900 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 100 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±12 A Drain Current (pulse) Note1 ID(pulse) ±22 A Total Power Dissipation (TC = 25°C) PT1 20 W Total Power Dissipation (TA = 25°C) PT2 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to +150 °C Single Avalanche Current Note2 IAS 10 A Single Avalanche Energy Note2 EAS 10 mJ Notes 1. PW ?

See also transistors datasheet: 2SK3666 , 2SK3703 , 2SK3704 , 2SK3708 , 2SK3745LS , 2SK3746 , 2SK3747 , 2SK3748 , 2SK30ATM , 2SK3816 , 2SK3817 , 2SK3820 , 2SK4043LS , 2SK4065 , 2SK4066 , 2SK4085LS , 2SK4087LS .

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