2SK932 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK932

Type of 2SK932 transistor:

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 10V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.012

Maximum junction temperature (Tj), °C:

Rise Time of 2SK932 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0

Package:

Equivalent transistors for 2SK932

2SK932 PDF documents for downloads:

1.1. 2sk932.pdf Size:91K _sanyo

Ordering number:EN2841 N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions · AM tuner RF amplifier, low-noise amplifier. unit:mm 2050A Features [2SK932] · Adoption of FBET process. 0.4 0.16 · Large ? yfs? . 3 · Small Ciss. 0 to 0.1 · Ultralow noise figure. · Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmer. 1 0.95 2 0.95 1.9 2.9 1 : Source 2 : Drain 3 : Gate SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 15 V Gate-to-Drain Voltage VGDS –15 V Gate Current IG 10 mA Drain Current ID 50 mA Allowable Power Dissipation PD 200 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Gate-to-Drain Breakdown Voltage V(BR)GDS IG=–10µA, VDS=0V –15 V Gate

5.1. 2sk937.pdf Size:79K _sanyo

Ordering number:EN3006 N-Channel Junction Silicon FET 2SK937 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions · Adoption of FBET process. unit:mm · Large ? yfs? . 2019B · Small Ciss. [2SK937] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 : Source 2 : Gate 3 : Drain 1 2 3 JEDEC : TO-92 EIAJ : SC-43 1.3 1.3 SANYO : NP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 40 V Gate-to-Drain Voltage VGDS –40 V Gate Current IG 10 mA Drain Current ID 100 mA Allowable Power Dissipation PD 300 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Gate-to-Drain Breakdown Voltage V(BR)GDS IG=–10µA, VDS=0 –40 V Gate-to-Source Leakage Current IGSS VGS=–20V, VDS=0 –1.0 nA Zero-Gate Voltage Drain Current IDSS VDS=10V, VGS=0 40* 75* mA Cutoff Voltage VGS(o

See also transistors datasheet: 2SK4177 , 2SK4196LS , 2SK4197LS , 2SK4198LS , 2SK4209 , 2SK4210 , 2SK4221 , 2SK4222 , IRF840 , 3LN01C , 3LN01M , 3LN01S , 3LP01C , 3LP01M , 3LP01S , 5LN01C , 5LN01M .

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