ATP208 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: ATP208

Type of ATP208 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 60

Maximum drain-source voltage |Uds|, V: 40V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 90

Maximum junction temperature (Tj), °C:

Rise Time of ATP208 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 40.698

Package:

Equivalent transistors for ATP208

ATP208 PDF documents for downloads:

5.1. atp204.pdf Size:268K _sanyo

ATP204 Ordering number : ENA1551 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP204 Applications Features • Low ON-resistance. • 4.5V drive. • Large current. • Slim package. • Halogen free compliance. Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 100 A Drain Current (PW?10?s) IDP PW?10?s, duty cycle?1% 300 A Allowable Power Dissipation PD Tc=25°C60 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 235 mJ Avalanche Current *2 IAV 50 A Note : *1 VDD=15V, L=100 H, IAV=50A ? *2 L 100 H, Single pulse ? ? at Ta=25°C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 ?

5.2. atp203.pdf Size:267K _sanyo

ATP203 Ordering number : ENA1318 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP203 Applications Features • Low ON-resistance. • Large current. • Slim package. • 4.5V drive. • Halogen free compliance. Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 75 A Drain Current (PW?10?s) IDP PW?10?s, duty cycle?1% 225 A Allowable Power Dissipation PD Tc=25°C50 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 52 mJ Avalanche Current *2 IAV 38 A Note : *1 VDD=10V, L=50 H, IAV=38A ? *2 L 50 H, Single pulse ? ? at Ta=25°C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 ?A G

5.3. atp202.pdf Size:267K _sanyo

ATP202 Ordering number : ENA1317 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP202 Applications Features • Low ON-resistance. • Large current. • Slim package. • 4.5V drive. • Halogen free compliance. Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 50 A Drain Current (PW?10?s) IDP PW?10?s, duty cycle?1% 150 A Allowable Power Dissipation PD Tc=25°C40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 45 mJ Avalanche Current *2 IAV 25 A Note : *1 VDD=10V, L=100 H, IAV=25A ? *2 L 100 H, Single pulse ? ? at Ta=25°C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 ?A

5.4. atp201.pdf Size:268K _sanyo

ATP201 Ordering number : ENA1547 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP201 Applications Features • Low ON-resistance. • 4.5V drive. • Slim package. • Halogen free compliance. Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 35 A Drain Current (PW?10?s) IDP PW?10?s, duty cycle?1% 105 A Allowable Power Dissipation PD Tc=25°C30 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 10 mJ Avalanche Current *2 IAV 18 A Note : *1 VDD=10V, L=50 H, IAV=18A ? *2 L 50 H, Single pulse ? ? at Ta=25°C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 ?A Gate-to-Source Leak

See also transistors datasheet: ATP113 , ATP114 , ATP201 , ATP202 , ATP203 , ATP204 , ATP206 , ATP207 , BF961 , ATP212 , ATP213 , ATP214 , ATP216 , ATP218 , ATP301 , ATP302 , ATP404 .

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