MOSFET Datasheet


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BS107A
  BS107A
  BS107A
 
BS107A
  BS107A
  BS107A
 
BS107A
  BS107A
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP04N70BI-H-HF
AP04N70BP-A ..AP2451GY-HF
AP2530AGY-HF ..AP4439GM-HF
AP4439GMT-HF ..AP73T02GJ-HF
AP73T03AGH-HF ..AP9575GH-HF
AP9575GI-HF ..AP9T15GH
AP9T15GJ ..APT8067HVR
APT8075BN ..AUIRFS4321
AUIRFS4410Z ..BF994
BF994S ..BLF7G27LS-150P
BLF7G27LS-200PB ..BSL215P
BSL307SP ..BUK203-50Y
BUK204-50Y ..BUK761R8-30C
BUK7620-100A ..BUK9E08-55B
BUK9E3R2-40B ..CEB21A2
CEB3060 ..CEM3060
CEM3083 ..CEU02N65A
CEU02N65G ..DMN3024LSS
DMN3030LSS ..FCA47N60
FCA47N60F ..FDC2612
FDC3512 ..FDG313N
FDG314P ..FDMS3672
FDMS3672 ..FDP6670AL
FDP7030BL ..FDS6930A
FDS6930B ..FMD15-06KC5
FMD15-06KC5 ..FQP12P20
FQP13N06L ..FRE460D
FRE460H ..FSL23AOR
FSL430D ..H7N0312AB
H7N0312LD ..HAT2185WP
HAT2187WP ..HUF76131SK8
HUF76132P3 ..IPB123N10N3G
IPB12CNE8NG ..IPD60R600E6
IPD60R750E6 ..IPP080N03LG
IPP080N06NG ..IRC220
IRC224 ..IRF3808
IRF3808S ..IRF6785
IRF6794M ..IRF7805
IRF7805A ..IRFB3307
IRFB3307Z ..IRFI5210
IRFI530A ..IRFP360LC
IRFP3703 ..IRFS23N20D
IRFS240 ..IRFSL41N15D
IRFSL4227 ..IRFZ44
IRFZ44A ..IRLML0030
IRLML0040 ..IXBJ40N140
IXBJ40N160 ..IXFH60N50P3
IXFH66N20Q ..IXFN130N30
IXFN132N50P3 ..IXFR80N15Q
IXFR80N20Q ..IXFX64N50P
IXFX64N50Q3 ..IXTE250N10
IXTF03N400 ..IXTK180N15
IXTK180N15P ..IXTP6N50P
IXTP70N075T2 ..IXTV26N50P
IXTV26N50PS ..KF7N60F
KF7N60P ..KP739A
KP739B ..MMBF4416
MMBF4416A ..MTDK1S6R
MTDK3S6R ..MTN6515J3
MTN6680Q8 ..NDF05N50Z
NDF06N60Z ..NTGS3455
NTGS4111P ..PHB110NQ08T
PHB11N50E ..PMN34LN
PMN34UN ..PSMN8R0-40PS
PSMN8R2-80YS ..RFP14N06L
RFP15N05L ..RJK2511DPK
RJK2555DPA ..RT1A050ZP
RT1A060AP ..SDF9130JAB
SDF9140 ..SI2300
SI2301 ..SML1004R2KN
SML1004RAN ..SMN01L20Q
SMN01Z30Q ..SSD02N65
SSD04N65 ..SSM3J01T
SSM3J02F ..SSM6L36FE
SSM6L36TU ..STB140NF75
STB141NF55 ..STD35N3LH5
STD35NF06 ..STF30NM50N
STF32N65M5 ..STL50N3LLH5
STL52N25M5 ..STP36N06L
STP36N06LFI ..STP9NK50Z
STP9NK60Z ..STW43NM60ND
STW45NM50 ..TK2A65D
TK2P60D ..TPC8086
TPC8087 ..TPCP8105
TPCP8106 ..UTN3055
UTP45N02 ..ZXM64P02X
ZXM64P035L3 ..ZXMS6006SG
 
BS107A All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BS107A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BS107A

Type of BS107A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.35

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 0.25

Maximum junction temperature (Tj), °C:

Rise Time of BS107A transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 4.5

Package: TO92

Equivalent transistors for BS107A

BS107A PDF doc:

1.1. bs107a_cnv_2.pdf Size:49K _philips

BS107A
BS107A
DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS107A D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, Drain-source voltage VDS max. 200 V etc. Gate-source voltage (open drain) ± VGSO max. 20 V • High-speed switching Drain current (DC) ID max. 250 mA • No second breakdown Total power dissipation up to Tcase =25 °C Ptot max. 0.6 W Drain-source ON-resistance typ. 4.5 ? DESCRIPTION ID = 250 mA; VGS = 10 V RDS(on) max. 6.4 ? N-channel enhancement mode vertical D-MOS transistor in TO-92 Transfer admittance min. 200 mS envelope and designed for use as line ID = 250 mA; VGS = 25 V ? Yfs? typ. 350 mS current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. PINNING - TO-92

1.2. bs107a.pdf Size:94K _onsemi

BS107A
BS107A
BS107A Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features http://onsemi.com • AEC Qualified 250 mAMPS, 200 VOLTS • PPAP Capable RDS(on) = 6.4 W • This is a Pb-Free Device* N-Channel D MAXIMUM RATINGS Rating Symbol Value Unit G Drain -Source Voltage VDS 200 Vdc Gate-Source Voltage - Continuous VGS ± 20 Vdc S - Non-repetitive (tp ? 50 ms) VGSM ± 30 Vpk Drain Current mAdc MARKING Continuous (Note 1) ID 250 DIAGRAM Pulsed (Note 2) IDM 500 Total Device Dissipation @ TA = 25°C PD 350 mW A Derate above 25°C BS107A YWW G Operating and Storage Junction TJ, Tstg -55 to °C TO-92 G Temperature Range 150 1 CASE 29-11 2 Stresses exceeding Maximum Ratings may damage the device. Maximum STYLE 30 3 Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location 1. The Power

5.1. bs107rev1.pdf Size:76K _motorola

BS107A
BS107A
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS107/D TMOS Switching BS107 N–Channel — Enhancement 1 DRAIN BS107A 2 GATE ? 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 200 Vdc 1 2 3 Gate–Source Voltage — Continuous VGS ±20 Vdc CASE 29–04, STYLE 30 — Non–repetitive (tp ? 50 µs) VGSM ±30 Vpk TO–92 (TO–226AA) Drain Current mAdc Continuous(1) ID 250 Pulsed(2) IDM 500 Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to 150 °C Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0) IDSS — — 30 nAdc Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc) V(BR)DSX 200 — — Vdc Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IGSS — 0.01 10 nAdc ON CHARACTERISTICS(2) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) VGS(T

5.2. bs107_cnv_2.pdf Size:65K _philips

BS107A
BS107A
DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS107 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage (DC) 200 V • High-speed switching VGSth gate-source threshold voltage 2.4 V • No secondary breakdown. ID drain current (DC) 150 mA RDSon drain-source on-state resistance 28 ? DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Intended for use as d handbook, halfpage a line current interruptor in telephone 1 sets and for applications in relay, 2 high-speed and line transformer 3 drivers. g PINNING - TO-92 variant s MAM146 PIN DESCRIPTION 1 source 2 gate Fig.1 Simplified outline and symbol. 3 drain April 1995 2 Phi

5.3. tn2404k_tn2404kl_bs107kl_2.pdf Size:89K _vishay

BS107A
BS107A

5.4. tn2404k_tn2404kl_bs107kl.pdf Size:70K _vishay

BS107A
BS107A

5.5. bs107p.pdf Size:25K _diodes

BS107A
BS107A
N-CHANNEL ENHANCEMENT BS107P MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23? D G S REFER TO BS107PT FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25°C ID 0.12 A Pulsed Drain Current IDM 2A Gate-Source Voltage VGS ±20 V Power Dissipation at Tamb =25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source BVDSS 200 230 V ID=100µA, VGS=0V Breakdown Voltage Gate Body Leakage IGSS 10 nA VGS=15V, VDS=0V Drain Cut-Off Current IDSS 30 nA VGS=0V, VDS=130V Drain Cut-Off Current IDSX 1 µA VGS=0.2V, VDS=70V Static Drain-Source RDS(on) 15 23 ? VGS=2.6V, ID=25mA* on-State Resistance 30 ? VGS=5V, ID=100mA* * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ? 2% 3-23

5.6. bs107pt.pdf Size:47K _diodes

BS107A
BS107A
N-CHANNEL ENHANCEMENT PT BS107PT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS VGS= * RDS(on)=28? 10V 6V D 4V G S E-Line TO92 Compatible 3V ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT 8 10 Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25°C ID 0.12 A Pulsed Drain Current IDM 2A Gate-Source Voltage VGS ±20 V Power Dissipation at Tamb =25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ID= 500mA ELECTRICAL CHARACTERISTICS (at T = 25°C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 250mA Drain-Source BVDSS 200 230 V ID=100µA, VGS=0V Breakdown Voltage I00mA 10 Gate Body Leakage IGSS 10 nA VGS=15V, VDS=0V Drain Cut-Off Current IDSS 30 nA VGS=0V, VDS=130V cs Drain Cut-Off Current IDSX 1 µA VGS=0.2V, VDS=70V Ciss Static Drain-Source RDS(on) 15 28 ? VGS=2.6V, ID=20mA* on-State Resistance 30 ? VGS=2.7V, ID=100mA* * Measured under pulsed conditions. Pulse width=300µs.

5.7. bs107.pdf Size:86K _infineon

BS107A
BS107A
BS 107 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 S G D Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 ? TO-92 BS 107 Type Ordering Code Tape and Reel Information BS 107 Q67000-S078 E6288 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 200 V V Drain-gate voltage DGR RGS = 20 k? 200 Gate source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Continuous drain current ID A TA = 31 ?C 0.13 DC drain current, pulsed IDpuls TA = 25 ?C 0.52 Power dissipation Ptot W TA = 25 ?C 1 Data Sheet 1 05.99 BS 107 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 ?C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ? 125 K/W DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Electrical Characteristics, at Tj = 25?C, unless other

See also transistors datasheet: BBS3002 , BFL4001 , BFL4004 , BFL4007 , BFL4026 , BFL4036 , BFL4037 , BMS4007 , IRF1010E , BSS123L , BSS138L , BSS84L , CPH3348 , CPH3351 , CPH3355 , CPH3448 , CPH3455 .

Keywords

 BS107A Datasheet  BS107A Datenblatt  BS107A RoHS  BS107A Distributor
 BS107A Application Notes  BS107A Component  BS107A Circuit  BS107A Schematic
 BS107A Equivalent  BS107A Cross Reference  BS107A Data Sheet  BS107A Fiche Technique

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