MOSFET Datasheet


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BS107A
  BS107A
  BS107A
 
BS107A
  BS107A
  BS107A
 
BS107A
  BS107A
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AP02N70EJ
AP02N90H-HF ..AP2311GK-HF
AP2311GN-HF ..AP4419GH
AP4419GJ ..AP6921GMT-HF
AP6922GMT-HF ..AP9561GH-HF
AP9561GI-HF ..AP9980GH
AP9980GJ ..APT6027HVR
APT6030BN ..AUIRFR3504
AUIRFR3504Z ..BF904AR
BF904AWR ..BLF7G10LS-250
BLF7G15LS-200 ..BSC190N15NS3G
BSC196N10NSG ..BSZ42DN25NS3G
BSZ440N10NS3G ..BUK7535-55A
BUK753R1-40B ..BUK9628-100A
BUK9628-55 ..CEB04N7G
CEB05N65 ..CEG8208
CEH2288 ..CES2306
CES2307 ..DMN2005K
DMN2005LP4K ..EMH2801
F5001H ..FDB8160_F085
FDB8160_F085 ..FDD86102
FDD86102 ..FDMC8884
FDMC8884 ..FDP2572
FDP2614 ..FDS6673BZ
FDS6673BZ_F085 ..FK16VS-6
FK18SM-10 ..FQD7N30
FQD7P06 ..FQT7N10L
FQU10N20C ..FSF250D
FSF250R ..H5N3004P
H5N3005LD ..HAT2139H
HAT2140H ..HUF75545S3S
HUF75623P3 ..IPB065N06LG
IPB065N15N3G ..IPD35N10S3L-26
IPD400N06NG ..IPP030N10N3G
IPP032N06N3G ..IPW60R041C6
IPW60R045CP ..IRF3703
IRF3704Z ..IRF6645
IRF6646 ..IRF7530
IRF7555 ..IRF9Z20
IRF9Z22 ..IRFH8325
IRFH8330 ..IRFP251
IRFP252 ..IRFR9024N
IRFR9024NC ..IRFS9532
IRFS9533 ..IRFY9120
IRFY9120C ..IRLI530N
IRLI540A ..IRLZ34NL
IRLZ34NS ..IXFH30N50P
IXFH30N50Q3 ..IXFM10N100
IXFM10N90 ..IXFR26N120P
IXFR26N50 ..IXFX26N60Q
IXFX26N90 ..IXTA80N12T2
IXTA86N20T ..IXTH6N90
IXTH6N90A ..IXTP3N100D2
IXTP3N100P ..IXTT80N20L
IXTT82N25P ..KF4N65F
KF4N65P ..KP505B
KP505G ..MCH6603
MCH6604 ..MTBC7N10N3
MTC1016S6R ..MTN3N60J3
MTN3N65FP ..NDB6060L
NDB608A ..NTD5413N
NTD5414N ..NVMFS4841N
NVTFS4823N ..PMBFJ211
PMBFJ212 ..PSMN4R0-40YS
PSMN4R1-30YLC ..RFD4N06L
RFD4N06LSM ..RJK1028DPA
RJK1028DSP ..RSD140P06
RSD150N06 ..SDF360JEB
SDF360JEC ..SGSP316
SGSP317 ..SMK1820D
SMK1820D2 ..SML801R2AN
SML801R2BN ..SPS03N60C3
SPS04N60C3 ..SSH6N60
SSH6N70 ..SSM6J51TU
SSM6J53FE ..SSW1N60A
SSW2N60A ..STD17NF25
STD18N55M5 ..STF14NM50N
STF15NM60ND ..STK7002
STK7006P ..STP28NM50N
STP2N60 ..STP80NF12
STP80NF55-06 ..STW20NA50
STW20NK50Z ..TK15J60T
TK15J60U ..TPC8041
TPC8042 ..TPCF8102
TPCF8103 ..UT65N03
UT6898 ..ZVNL535A
ZVP0120A ..ZXMS6006SG
 
BS107A All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BS107A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BS107A

Type of BS107A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.35

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 0.25

Maximum junction temperature (Tj), °C:

Rise Time of BS107A transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 4.5

Package: TO92

Equivalent transistors for BS107A

BS107A PDF doc:

1.1. bs107a_cnv_2.pdf Size:49K _philips

BS107A
BS107A
DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS107A D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, Drain-source voltage VDS max. 200 V etc. Gate-source voltage (open drain) ± VGSO max. 20 V • High-speed switching Drain current (DC) ID max. 250 mA • No second breakdown Total power dissipation up to Tcase =25 °C Ptot max. 0.6 W Drain-source ON-resistance typ. 4.5 ? DESCRIPTION ID = 250 mA; VGS = 10 V RDS(on) max. 6.4 ? N-channel enhancement mode vertical D-MOS transistor in TO-92 Transfer admittance min. 200 mS envelope and designed for use as line ID = 250 mA; VGS = 25 V ? Yfs? typ. 350 mS current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. PINNING - TO-92

1.2. bs107a.pdf Size:94K _onsemi

BS107A
BS107A
BS107A Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features http://onsemi.com • AEC Qualified 250 mAMPS, 200 VOLTS • PPAP Capable RDS(on) = 6.4 W • This is a Pb-Free Device* N-Channel D MAXIMUM RATINGS Rating Symbol Value Unit G Drain -Source Voltage VDS 200 Vdc Gate-Source Voltage - Continuous VGS ± 20 Vdc S - Non-repetitive (tp ? 50 ms) VGSM ± 30 Vpk Drain Current mAdc MARKING Continuous (Note 1) ID 250 DIAGRAM Pulsed (Note 2) IDM 500 Total Device Dissipation @ TA = 25°C PD 350 mW A Derate above 25°C BS107A YWW G Operating and Storage Junction TJ, Tstg -55 to °C TO-92 G Temperature Range 150 1 CASE 29-11 2 Stresses exceeding Maximum Ratings may damage the device. Maximum STYLE 30 3 Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location 1. The Power

5.1. bs107rev1.pdf Size:76K _motorola

BS107A
BS107A
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS107/D TMOS Switching BS107 N–Channel — Enhancement 1 DRAIN BS107A 2 GATE ? 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 200 Vdc 1 2 3 Gate–Source Voltage — Continuous VGS ±20 Vdc CASE 29–04, STYLE 30 — Non–repetitive (tp ? 50 µs) VGSM ±30 Vpk TO–92 (TO–226AA) Drain Current mAdc Continuous(1) ID 250 Pulsed(2) IDM 500 Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to 150 °C Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0) IDSS — — 30 nAdc Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc) V(BR)DSX 200 — — Vdc Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IGSS — 0.01 10 nAdc ON CHARACTERISTICS(2) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) VGS(T

5.2. bs107_cnv_2.pdf Size:65K _philips

BS107A
BS107A
DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS107 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage (DC) 200 V • High-speed switching VGSth gate-source threshold voltage 2.4 V • No secondary breakdown. ID drain current (DC) 150 mA RDSon drain-source on-state resistance 28 ? DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Intended for use as d handbook, halfpage a line current interruptor in telephone 1 sets and for applications in relay, 2 high-speed and line transformer 3 drivers. g PINNING - TO-92 variant s MAM146 PIN DESCRIPTION 1 source 2 gate Fig.1 Simplified outline and symbol. 3 drain April 1995 2 Phi

5.3. tn2404k_tn2404kl_bs107kl_2.pdf Size:89K _vishay

BS107A
BS107A

5.4. tn2404k_tn2404kl_bs107kl.pdf Size:70K _vishay

BS107A
BS107A

5.5. bs107p.pdf Size:25K _diodes

BS107A
BS107A
N-CHANNEL ENHANCEMENT BS107P MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23? D G S REFER TO BS107PT FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25°C ID 0.12 A Pulsed Drain Current IDM 2A Gate-Source Voltage VGS ±20 V Power Dissipation at Tamb =25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source BVDSS 200 230 V ID=100µA, VGS=0V Breakdown Voltage Gate Body Leakage IGSS 10 nA VGS=15V, VDS=0V Drain Cut-Off Current IDSS 30 nA VGS=0V, VDS=130V Drain Cut-Off Current IDSX 1 µA VGS=0.2V, VDS=70V Static Drain-Source RDS(on) 15 23 ? VGS=2.6V, ID=25mA* on-State Resistance 30 ? VGS=5V, ID=100mA* * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ? 2% 3-23

5.6. bs107pt.pdf Size:47K _diodes

BS107A
BS107A
N-CHANNEL ENHANCEMENT PT BS107PT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS VGS= * RDS(on)=28? 10V 6V D 4V G S E-Line TO92 Compatible 3V ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT 8 10 Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25°C ID 0.12 A Pulsed Drain Current IDM 2A Gate-Source Voltage VGS ±20 V Power Dissipation at Tamb =25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ID= 500mA ELECTRICAL CHARACTERISTICS (at T = 25°C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 250mA Drain-Source BVDSS 200 230 V ID=100µA, VGS=0V Breakdown Voltage I00mA 10 Gate Body Leakage IGSS 10 nA VGS=15V, VDS=0V Drain Cut-Off Current IDSS 30 nA VGS=0V, VDS=130V cs Drain Cut-Off Current IDSX 1 µA VGS=0.2V, VDS=70V Ciss Static Drain-Source RDS(on) 15 28 ? VGS=2.6V, ID=20mA* on-State Resistance 30 ? VGS=2.7V, ID=100mA* * Measured under pulsed conditions. Pulse width=300µs.

5.7. bs107.pdf Size:86K _infineon

BS107A
BS107A
BS 107 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 S G D Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 ? TO-92 BS 107 Type Ordering Code Tape and Reel Information BS 107 Q67000-S078 E6288 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 200 V V Drain-gate voltage DGR RGS = 20 k? 200 Gate source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Continuous drain current ID A TA = 31 ?C 0.13 DC drain current, pulsed IDpuls TA = 25 ?C 0.52 Power dissipation Ptot W TA = 25 ?C 1 Data Sheet 1 05.99 BS 107 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 ?C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ? 125 K/W DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Electrical Characteristics, at Tj = 25?C, unless other

See also transistors datasheet: BBS3002 , BFL4001 , BFL4004 , BFL4007 , BFL4026 , BFL4036 , BFL4037 , BMS4007 , IRF1010E , BSS123L , BSS138L , BSS84L , CPH3348 , CPH3351 , CPH3355 , CPH3448 , CPH3455 .

Keywords

 BS107A Datasheet  BS107A Datenblatt  BS107A RoHS  BS107A Distributor
 BS107A Application Notes  BS107A Component  BS107A Circuit  BS107A Schematic
 BS107A Equivalent  BS107A Cross Reference  BS107A Data Sheet  BS107A Fiche Technique

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