MOSFET Datasheet


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BS107A
  BS107A
  BS107A
 
BS107A
  BS107A
  BS107A
 
BS107A
  BS107A
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRFB3307Z
AUIRFB3607 ..BF1211R
BF1211WR ..BLF6G20-180RN
BLF6G20-230PRN ..BSC057N03MSG
BSC057N08NS3G ..BSS84PW
BSS84S6R ..BUK7225-55A
BUK7226-75A ..BUK9524-55A
BUK9528-55 ..BUZ903D
BUZ903DP ..CEE02N6G
CEF02N65A ..CEP35P10
CEP4060A ..DMG1012T
DMG1012UW ..ECG454
ECG455 ..FDB12N50U
FDB13AN06A0 ..FDD5N50NZF
FDD5N50U ..FDMC7660DC
FDMC7660S ..FDP036N10A
FDP036N10A ..FDS4141_F085
FDS4410 ..FDY101PZ
FDY102PZ ..FQD13N10
FQD13N10 ..FQPF5P20
FQPF630 ..FRS230D
FRS230H ..H2305N
H2N7000 ..HAT2038R
HAT2039R ..HUF75307P3
HUF75307T3ST ..IPA90R1K2C3
IPA90R340C3 ..IPD082N10N3G
IPD088N04LG ..IPI65R280C6
IPI65R380C6 ..IPP80N06S2L-06
IPP80N06S2L-07 ..IRF2204L
IRF2204S ..IRF640A
IRF640FI ..IRF7420
IRF7421D1 ..IRF9521
IRF9522 ..IRFF430
IRFF9024 ..IRFP054
IRFP054N ..IRFR2607Z
IRFR2905Z ..IRFS732
IRFS733 ..IRFU9222
IRFU9310 ..IRL640S
IRL641 ..IRLU3410
IRLU3636 ..IXFH15N60
IXFH15N80 ..IXFK55N50F
IXFK60N25Q ..IXFP6N120P
IXFP76N15T2 ..IXFV36N50P
IXFV36N50PS ..IXTA2R4N120P
IXTA300N04T2 ..IXTH3N100P
IXTH3N120 ..IXTP1N100P
IXTP1N120P ..IXTT110N10P
IXTT11P50 ..JANSR2N7411
JFTJ105 ..KMB6D6N30Q
KMB7D0DN40Q ..KU310N10D
KU310N10P ..MTB35N04J3
MTB35N06ZL ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD110N02R
NTD14N03R ..NTR4101
NTR4170N ..PHT11N06LT
PHT4NQ10LT ..PSMN1R1-30PL
PSMN1R2-25YL ..RF1S4N100SM
RF1S50N06LESM ..RJK03E2DNS
RJK03E3DNS ..RQJ0306FQDQS
RQJ0601DGDQS ..SDF12N100
SDF12N90 ..SFT1450
SFU2955 ..SMK0170I
SMK0260IS ..SML50W40
SML6017AFN ..SPI20N65C3
SPI21N50C3 ..SSG5509A
SSG6612N ..SSM3K43FS
SSM3K44FS ..SSRF90N06
SSRF90N06-10 ..STD120N4LF6
STD12N05 ..STE24N90
STE250N05 ..STI35N65M5
STI42N65M5 ..STP200N4F3
STP200N6F3 ..STP6N50
STP6N50FI ..STV5NA50
STV5NA80 ..TK11A45D
TK11A50D ..TPC6102
TPC6103 ..TPCA8108
TPCA8109 ..UT30P04
UT3310 ..ZDM4306N
ZDS020N60 ..ZXMP7A17G
ZXMP7A17K ..ZXMS6006SG
 
BS107A All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BS107A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BS107A

Type of BS107A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.35

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 0.25

Maximum junction temperature (Tj), °C:

Rise Time of BS107A transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 4.5

Package: TO92

Equivalent transistors for BS107A

BS107A PDF doc:

1.1. bs107a_cnv_2.pdf Size:49K _philips

BS107A
BS107A
DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS107A D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, Drain-source voltage VDS max. 200 V etc. Gate-source voltage (open drain) ± VGSO max. 20 V • High-speed switching Drain current (DC) ID max. 250 mA • No second breakdown Total power dissipation up to Tcase =25 °C Ptot max. 0.6 W Drain-source ON-resistance typ. 4.5 ? DESCRIPTION ID = 250 mA; VGS = 10 V RDS(on) max. 6.4 ? N-channel enhancement mode vertical D-MOS transistor in TO-92 Transfer admittance min. 200 mS envelope and designed for use as line ID = 250 mA; VGS = 25 V ? Yfs? typ. 350 mS current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. PINNING - TO-92

1.2. bs107a.pdf Size:94K _onsemi

BS107A
BS107A
BS107A Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features http://onsemi.com • AEC Qualified 250 mAMPS, 200 VOLTS • PPAP Capable RDS(on) = 6.4 W • This is a Pb-Free Device* N-Channel D MAXIMUM RATINGS Rating Symbol Value Unit G Drain -Source Voltage VDS 200 Vdc Gate-Source Voltage - Continuous VGS ± 20 Vdc S - Non-repetitive (tp ? 50 ms) VGSM ± 30 Vpk Drain Current mAdc MARKING Continuous (Note 1) ID 250 DIAGRAM Pulsed (Note 2) IDM 500 Total Device Dissipation @ TA = 25°C PD 350 mW A Derate above 25°C BS107A YWW G Operating and Storage Junction TJ, Tstg -55 to °C TO-92 G Temperature Range 150 1 CASE 29-11 2 Stresses exceeding Maximum Ratings may damage the device. Maximum STYLE 30 3 Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location 1. The Power

5.1. bs107rev1.pdf Size:76K _motorola

BS107A
BS107A
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS107/D TMOS Switching BS107 N–Channel — Enhancement 1 DRAIN BS107A 2 GATE ? 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 200 Vdc 1 2 3 Gate–Source Voltage — Continuous VGS ±20 Vdc CASE 29–04, STYLE 30 — Non–repetitive (tp ? 50 µs) VGSM ±30 Vpk TO–92 (TO–226AA) Drain Current mAdc Continuous(1) ID 250 Pulsed(2) IDM 500 Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to 150 °C Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0) IDSS — — 30 nAdc Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc) V(BR)DSX 200 — — Vdc Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IGSS — 0.01 10 nAdc ON CHARACTERISTICS(2) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) VGS(T

5.2. bs107_cnv_2.pdf Size:65K _philips

BS107A
BS107A
DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS107 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage (DC) 200 V • High-speed switching VGSth gate-source threshold voltage 2.4 V • No secondary breakdown. ID drain current (DC) 150 mA RDSon drain-source on-state resistance 28 ? DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Intended for use as d handbook, halfpage a line current interruptor in telephone 1 sets and for applications in relay, 2 high-speed and line transformer 3 drivers. g PINNING - TO-92 variant s MAM146 PIN DESCRIPTION 1 source 2 gate Fig.1 Simplified outline and symbol. 3 drain April 1995 2 Phi

5.3. tn2404k_tn2404kl_bs107kl_2.pdf Size:89K _vishay

BS107A
BS107A

5.4. tn2404k_tn2404kl_bs107kl.pdf Size:70K _vishay

BS107A
BS107A

5.5. bs107p.pdf Size:25K _diodes

BS107A
BS107A
N-CHANNEL ENHANCEMENT BS107P MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23? D G S REFER TO BS107PT FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25°C ID 0.12 A Pulsed Drain Current IDM 2A Gate-Source Voltage VGS ±20 V Power Dissipation at Tamb =25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source BVDSS 200 230 V ID=100µA, VGS=0V Breakdown Voltage Gate Body Leakage IGSS 10 nA VGS=15V, VDS=0V Drain Cut-Off Current IDSS 30 nA VGS=0V, VDS=130V Drain Cut-Off Current IDSX 1 µA VGS=0.2V, VDS=70V Static Drain-Source RDS(on) 15 23 ? VGS=2.6V, ID=25mA* on-State Resistance 30 ? VGS=5V, ID=100mA* * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ? 2% 3-23

5.6. bs107pt.pdf Size:47K _diodes

BS107A
BS107A
N-CHANNEL ENHANCEMENT PT BS107PT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS VGS= * RDS(on)=28? 10V 6V D 4V G S E-Line TO92 Compatible 3V ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT 8 10 Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25°C ID 0.12 A Pulsed Drain Current IDM 2A Gate-Source Voltage VGS ±20 V Power Dissipation at Tamb =25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ID= 500mA ELECTRICAL CHARACTERISTICS (at T = 25°C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 250mA Drain-Source BVDSS 200 230 V ID=100µA, VGS=0V Breakdown Voltage I00mA 10 Gate Body Leakage IGSS 10 nA VGS=15V, VDS=0V Drain Cut-Off Current IDSS 30 nA VGS=0V, VDS=130V cs Drain Cut-Off Current IDSX 1 µA VGS=0.2V, VDS=70V Ciss Static Drain-Source RDS(on) 15 28 ? VGS=2.6V, ID=20mA* on-State Resistance 30 ? VGS=2.7V, ID=100mA* * Measured under pulsed conditions. Pulse width=300µs.

5.7. bs107.pdf Size:86K _infineon

BS107A
BS107A
BS 107 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 S G D Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 ? TO-92 BS 107 Type Ordering Code Tape and Reel Information BS 107 Q67000-S078 E6288 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 200 V V Drain-gate voltage DGR RGS = 20 k? 200 Gate source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Continuous drain current ID A TA = 31 ?C 0.13 DC drain current, pulsed IDpuls TA = 25 ?C 0.52 Power dissipation Ptot W TA = 25 ?C 1 Data Sheet 1 05.99 BS 107 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 ?C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ? 125 K/W DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Electrical Characteristics, at Tj = 25?C, unless other

See also transistors datasheet: BBS3002 , BFL4001 , BFL4004 , BFL4007 , BFL4026 , BFL4036 , BFL4037 , BMS4007 , IRF1010E , BSS123L , BSS138L , BSS84L , CPH3348 , CPH3351 , CPH3355 , CPH3448 , CPH3455 .

Keywords

 BS107A Datasheet  BS107A Datenblatt  BS107A RoHS  BS107A Distributor
 BS107A Application Notes  BS107A Component  BS107A Circuit  BS107A Schematic
 BS107A Equivalent  BS107A Cross Reference  BS107A Data Sheet  BS107A Fiche Technique

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