MOSFET Datasheet


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BS107A
  BS107A
  BS107A
 
BS107A
  BS107A
  BS107A
 
BS107A
  BS107A
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB2532_F085
FDB2552 ..FDD8870
FDD8870_F085 ..FDMS86105
FDMS86200 ..FDS4501H
FDS4559 ..FK7SM-12
FK7UM-12 ..FQP11N40C
FQP11N40C ..FRE264D
FRE264H ..FSL23A4D
FSL23A4R ..H7N0311LD
H7N0311LM ..HAT2179R
HAT2183WP ..HUF76129D3S
HUF76129P3 ..IPB120N06S4-02
IPB120N06S4-03 ..IPD60R520CP
IPD60R600C6 ..IPP072N10N3G
IPP075N15N3G ..IRC130
IRC140 ..IRF3711ZCS
IRF3711ZL ..IRF6723M2D
IRF6724M ..IRF7752G
IRF7754G ..IRFB3206G
IRFB3207 ..IRFI4321
IRFI4410Z ..IRFP350LC
IRFP351 ..IRFS153
IRFS230 ..IRFSL3607
IRFSL3806 ..IRFZ34NL
IRFZ34NS ..IRLL3303
IRLM014A ..IXBH20N140
IXBH20N160 ..IXFH58N20
IXFH58N20Q ..IXFN100N50Q3
IXFN102N30P ..IXFR64N50P
IXFR64N50Q3 ..IXFX520N075T2
IXFX52N60Q2 ..IXTC280N055T
IXTC36P15P ..IXTK140N30P
IXTK150N15P ..IXTP60N20T
IXTP60N28TM-A ..IXTV22N60P
IXTV22N60PS ..KF70N06F
KF70N06P ..KP731B
KP731V ..MMBF4391
MMBF4391L ..MTD6N20E
MTDA0N10J3 ..MTN5N60J3
MTN5N65FP ..NDD05N50Z
NDF02N60Z ..NTGS3130N
NTGS3136P ..P1087
PF5102 ..PMN23UN
PMN25EN ..PSMN7R0-40LS
PSMN7R0-60YS ..RFP12N10L
RFP12P08 ..RJK2017DPE
RJK2017DPP ..RSR025N03
RSR025N05 ..SDF360JEC
SDF360JED ..SGM2310A
SGM3055 ..SMK0860P
SMK0870F ..SML6060AN
SML6060BN ..SPD50N03S2L-06G
SPD50P03LG ..SSG4841P
SSG4842N ..SSM3K309T
SSM3K310T ..SSPS7331P
SSPS7332N ..STB80NF03L-04
STB80NF03L-04T4 ..STD70NS04ZL
STD75N3LLH6 ..STH15NA50FI
STH180N10F3-2 ..STM4639
STM4639T ..STP25N06FI
STP25NM60ND ..STP7NA40
STP7NA40FI ..STT6405
STT6602 ..STW15NM60ND
STW160N75F3 ..TK16A45D
TK16A55D ..TPC8046-H
TPC8047-H ..TPCF8105
TPCF8107 ..UT70P03
UT7317 ..ZVP0540A
ZVP0545A ..ZXMS6006SG
 
BS107A All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BS107A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BS107A

Type of BS107A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.35

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 0.25

Maximum junction temperature (Tj), °C:

Rise Time of BS107A transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 4.5

Package: TO92

Equivalent transistors for BS107A

BS107A PDF doc:

1.1. bs107a_cnv_2.pdf Size:49K _philips

BS107A
BS107A
DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS107A D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, Drain-source voltage VDS max. 200 V etc. Gate-source voltage (open drain) ± VGSO max. 20 V • High-speed switching Drain current (DC) ID max. 250 mA • No second breakdown Total power dissipation up to Tcase =25 °C Ptot max. 0.6 W Drain-source ON-resistance typ. 4.5 ? DESCRIPTION ID = 250 mA; VGS = 10 V RDS(on) max. 6.4 ? N-channel enhancement mode vertical D-MOS transistor in TO-92 Transfer admittance min. 200 mS envelope and designed for use as line ID = 250 mA; VGS = 25 V ? Yfs? typ. 350 mS current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. PINNING - TO-92

1.2. bs107a.pdf Size:94K _onsemi

BS107A
BS107A
BS107A Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features http://onsemi.com • AEC Qualified 250 mAMPS, 200 VOLTS • PPAP Capable RDS(on) = 6.4 W • This is a Pb-Free Device* N-Channel D MAXIMUM RATINGS Rating Symbol Value Unit G Drain -Source Voltage VDS 200 Vdc Gate-Source Voltage - Continuous VGS ± 20 Vdc S - Non-repetitive (tp ? 50 ms) VGSM ± 30 Vpk Drain Current mAdc MARKING Continuous (Note 1) ID 250 DIAGRAM Pulsed (Note 2) IDM 500 Total Device Dissipation @ TA = 25°C PD 350 mW A Derate above 25°C BS107A YWW G Operating and Storage Junction TJ, Tstg -55 to °C TO-92 G Temperature Range 150 1 CASE 29-11 2 Stresses exceeding Maximum Ratings may damage the device. Maximum STYLE 30 3 Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location 1. The Power

5.1. bs107rev1.pdf Size:76K _motorola

BS107A
BS107A
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS107/D TMOS Switching BS107 N–Channel — Enhancement 1 DRAIN BS107A 2 GATE ? 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 200 Vdc 1 2 3 Gate–Source Voltage — Continuous VGS ±20 Vdc CASE 29–04, STYLE 30 — Non–repetitive (tp ? 50 µs) VGSM ±30 Vpk TO–92 (TO–226AA) Drain Current mAdc Continuous(1) ID 250 Pulsed(2) IDM 500 Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to 150 °C Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0) IDSS — — 30 nAdc Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc) V(BR)DSX 200 — — Vdc Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IGSS — 0.01 10 nAdc ON CHARACTERISTICS(2) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) VGS(T

5.2. bs107_cnv_2.pdf Size:65K _philips

BS107A
BS107A
DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS107 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage (DC) 200 V • High-speed switching VGSth gate-source threshold voltage 2.4 V • No secondary breakdown. ID drain current (DC) 150 mA RDSon drain-source on-state resistance 28 ? DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Intended for use as d handbook, halfpage a line current interruptor in telephone 1 sets and for applications in relay, 2 high-speed and line transformer 3 drivers. g PINNING - TO-92 variant s MAM146 PIN DESCRIPTION 1 source 2 gate Fig.1 Simplified outline and symbol. 3 drain April 1995 2 Phi

5.3. tn2404k_tn2404kl_bs107kl_2.pdf Size:89K _vishay

BS107A
BS107A

5.4. tn2404k_tn2404kl_bs107kl.pdf Size:70K _vishay

BS107A
BS107A

5.5. bs107p.pdf Size:25K _diodes

BS107A
BS107A
N-CHANNEL ENHANCEMENT BS107P MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23? D G S REFER TO BS107PT FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25°C ID 0.12 A Pulsed Drain Current IDM 2A Gate-Source Voltage VGS ±20 V Power Dissipation at Tamb =25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source BVDSS 200 230 V ID=100µA, VGS=0V Breakdown Voltage Gate Body Leakage IGSS 10 nA VGS=15V, VDS=0V Drain Cut-Off Current IDSS 30 nA VGS=0V, VDS=130V Drain Cut-Off Current IDSX 1 µA VGS=0.2V, VDS=70V Static Drain-Source RDS(on) 15 23 ? VGS=2.6V, ID=25mA* on-State Resistance 30 ? VGS=5V, ID=100mA* * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ? 2% 3-23

5.6. bs107pt.pdf Size:47K _diodes

BS107A
BS107A
N-CHANNEL ENHANCEMENT PT BS107PT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS VGS= * RDS(on)=28? 10V 6V D 4V G S E-Line TO92 Compatible 3V ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT 8 10 Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25°C ID 0.12 A Pulsed Drain Current IDM 2A Gate-Source Voltage VGS ±20 V Power Dissipation at Tamb =25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ID= 500mA ELECTRICAL CHARACTERISTICS (at T = 25°C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 250mA Drain-Source BVDSS 200 230 V ID=100µA, VGS=0V Breakdown Voltage I00mA 10 Gate Body Leakage IGSS 10 nA VGS=15V, VDS=0V Drain Cut-Off Current IDSS 30 nA VGS=0V, VDS=130V cs Drain Cut-Off Current IDSX 1 µA VGS=0.2V, VDS=70V Ciss Static Drain-Source RDS(on) 15 28 ? VGS=2.6V, ID=20mA* on-State Resistance 30 ? VGS=2.7V, ID=100mA* * Measured under pulsed conditions. Pulse width=300µs.

5.7. bs107.pdf Size:86K _infineon

BS107A
BS107A
BS 107 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 S G D Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 ? TO-92 BS 107 Type Ordering Code Tape and Reel Information BS 107 Q67000-S078 E6288 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 200 V V Drain-gate voltage DGR RGS = 20 k? 200 Gate source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Continuous drain current ID A TA = 31 ?C 0.13 DC drain current, pulsed IDpuls TA = 25 ?C 0.52 Power dissipation Ptot W TA = 25 ?C 1 Data Sheet 1 05.99 BS 107 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 ?C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ? 125 K/W DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Electrical Characteristics, at Tj = 25?C, unless other

See also transistors datasheet: BBS3002 , BFL4001 , BFL4004 , BFL4007 , BFL4026 , BFL4036 , BFL4037 , BMS4007 , IRF1010E , BSS123L , BSS138L , BSS84L , CPH3348 , CPH3351 , CPH3355 , CPH3448 , CPH3455 .

Keywords

 BS107A Datasheet  BS107A Datenblatt  BS107A RoHS  BS107A Distributor
 BS107A Application Notes  BS107A Component  BS107A Circuit  BS107A Schematic
 BS107A Equivalent  BS107A Cross Reference  BS107A Data Sheet  BS107A Fiche Technique

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