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MCH6321 MOSFET (IC) Datasheet. Cross Reference Search. MCH6321 Equivalent

Type Designator: MCH6321

Type of MCH6321 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 1.5

Maximum drain-source voltage |Uds|, V: 20

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C:

Rise Time of MCH6321 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.063

Package: MCPH6

MCH6321 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MCH6321 PDF doc:

1.1. mch6321.pdf Size:269K _sanyo

MCH6321
MCH6321

Ordering number : ENA0963 MCH6321 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6321 Applications Features 1.8V drive Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID --4 A Drain Current (Pulse) IDP PW

4.1. mch6320.pdf Size:265K _sanyo

MCH6321
MCH6321

Ordering number : ENA0815 MCH6320 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6320 Applications Features Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID --3.5

5.1. mch6302.pdf Size:30K _sanyo

MCH6321
MCH6321

Ordering number : ENN7132 MCH6302 P-Channel Silicon MOSFET MCH6302 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2193A 4V drive. [MCH6302] 0.3 0.15 4 5 6 3 2 1 1 : Drain 0.65 2 : Drain 6 5 4 2.0 3 : Gate (Bottom view) 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 1 2 3 (Top view)

5.2. mch6331.pdf Size:268K _sanyo

MCH6321
MCH6321

Ordering number : ENA1017 MCH6331 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6331 Applications Features Low ON-resistance. 4V drive Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --3.5 A Drain

5.3. mch6342.pdf Size:485K _sanyo

MCH6321
MCH6321

MCH6342 Ordering number : ENA1553 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6342 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-

5.4. mch6341.pdf Size:64K _sanyo

MCH6321
MCH6321

Ordering number : ENA1272 MCH6341 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6341 Applications Features Low ON-resistance. 4V drive Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --5 A Drain Cu

5.5. mch6303.pdf Size:27K _sanyo

MCH6321
MCH6321

Ordering number : ENN6778 MCH6303 P-Channel Silicon MOSFET MCH6303 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2193 2.5V drive. [MCH6303] 0.3 0.15 6 5 4 1 2 3 0.65 1 : Drain 2.0 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Specifications SANYO : MCPH6 Absolute Maximum Ratings at Ta=25C

5.6. mch6344.pdf Size:342K _sanyo

MCH6321
MCH6321

MCH6344 Ordering number : EN8934 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6344 Applications Features ON-resistance RDS(on)1=115m (typ.) ? 4V drive Halogen free compliance Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage

5.7. mch6336.pdf Size:66K _sanyo

MCH6321
MCH6321

Ordering number : ENA0958 MCH6336 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6336 Applications Features Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID --5 A

5.8. mch6307.pdf Size:29K _sanyo

MCH6321
MCH6321

Ordering number : ENN7080 MCH6307 P-Channel Silicon MOSFET MCH6307 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2193A 1.8V drive. [MCH6307] 0.3 0.15 4 5 6 3 2 1 0.65 1 : Drain 2 : Drain 2.0 6 5 4 3 : Gate 4 : Source 5 : Drain 6 : Drain 1 2 3 SANYO : MCPH6 Specifications Absolute

5.9. mch6305.pdf Size:28K _sanyo

MCH6321
MCH6321

Ordering number : ENN6943 MCH6305 P-Channel Silicon MOSFET MCH6305 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2193 2.5V drive. [MCH6305] 0.3 0.15 6 5 4 1 2 3 0.65 1 : Drain 2.0 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Specifications SANYO : MCPH6 Absolute Maximum Ratings at Ta=25C

5.10. mch6337.pdf Size:66K _sanyo

MCH6321
MCH6321

Ordering number : ENA0959 MCH6337 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6337 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS 10 V Drain

See also transistors datasheet: J310 , MCH3374 , MCH3377 , MCH3383 , MCH3475 , MCH3477 , MCH3484 , MCH6320 , 2SK3569 , MCH6331 , MCH6336 , MCH6337 , MCH6341 , MCH6342 , MCH6344 , MCH6421 , MCH6431 .

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