NTD6415ANL MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: NTD6415ANL

Type of NTD6415ANL transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 83

Maximum drain-source voltage |Uds|, V: 100V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 23

Maximum junction temperature (Tj), °C:

Rise Time of NTD6415ANL transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.044

Package: DPAK4

Equivalent transistors for NTD6415ANL

NTD6415ANL PDF documents for downloads:

1.1. ntd6415anl-d.pdf Size:259K _onsemi

NTD6415ANL N--Channel Power MOSFET 100 V, 23 A, 56 m?, Logic Level Features ? Low RDS(on) http://onsemi.com ? 100% Avalanche Tested ? AEC--Q101 Qualified V(BR)DSS RDS(on) MAX ID MAX ? These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 56 m? @4.5 V 100 V 23 A 52 m? @10V MAXIMUM RATINGS (TJ =25?C unless otherwise noted) Parameter Symbol Value Unit D Drain--to--Source Voltage VDSS 100 V Gate--to--Source Voltage -- Continuous VGS ±20 V Continuous Drain Steady TC =25?C ID 23 A G Current State TC = 100?C 16 Power Dissipation Steady TC =25?C PD 83 W S State Pulsed Drain Current tp =10ms IDM 80 A 4 Operating and Storage Temperature Range TJ, Tstg --55 to ?C +175 2 1 Source Current (Body Diode) IS 23 A 3 Single Pulse Drain--to--Source Avalanche EAS 79 mJ DPAK Energy (VDD =50Vdc, VGS =10Vdc, IL(pk) = CASE 369AA 23 A, L = 0.3 mH, RG =25?) STYLE 2 Lead Temperature for Soldering TL 260 ?C Purposes, 1/8? from Case for 10 Seconds MARKING

1.2. ntd6415an.pdf Size:138K _onsemi

NTD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features • Low RDS(on) • High Current Capability http://onsemi.com • 100% Avalanche Tested • These Devices are Pb-Free and are RoHS Compliant ID MAX V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit 100 V 55 mW @ 10 V 23 A Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage - Continuous VGS $20 V N-Channel Continuous Drain Steady TC = 25°C ID 23 A D Current RqJC State TC = 100°C 16 Power Dissipation Steady TC = 25°C PD 83 W RqJC State G Pulsed Drain Current tp = 10 ms IDM 89 A Operating and Storage Temperature Range TJ, Tstg -55 to °C +175 S Source Current (Body Diode) IS 23 A 4 Single Pulse Drain-to-Source Avalanche EAS 79 mJ Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 23 A, L = 0.3 mH, RG = 25 W) 4 Lead Temperature for Soldering TL 260 °C 1 Purposes, 1/8? from Case for 10 Seconds 2 1 2 3 3 THERMAL RESISTANCE RATINGS DPAK IPAK

4.1. ntd6414an.pdf Size:137K _onsemi

NTD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features • Low RDS(on) • High Current Capability http://onsemi.com • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS ID MAX Compliant V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 100 V 37 mW @ 10 V 32 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel Gate-to-Source Voltage - Continuous VGS $20 V D Continuous Drain Steady TC = 25°C ID 32 A Current RqJC State TC = 100°C 22 Power Dissipation Steady TC = 25°C PD 100 W RqJC State G Pulsed Drain Current tp = 10 ms IDM 117 A Operating and Storage Temperature Range TJ, Tstg -55 to °C S +175 Source Current (Body Diode) IS 32 A 4 Single Pulse Drain-to-Source Avalanche EAS 154 mJ 4 Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 32 A, L = 0.3 mH, RG = 25 W) 1 2 1 Lead Temperature for Soldering TL 260 °C 2 3 Purposes, 1/8? from Case for 10 Seconds 3 DPAK IPAK C

4.2. ntd6416an.pdf Size:141K _onsemi

NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features • Low RDS(on) • High Current Capability http://onsemi.com • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS ID MAX Compliant V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 100 V 81 mW @ 10 V 17 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel Gate-to-Source Voltage - Continuous VGS $20 V D Continuous Drain Steady TC = 25°C ID 17 A Current State TC = 100°C 11 Power Dissipation Steady TC = 25°C PD 71 W State G Pulsed Drain Current tp = 10 ms IDM 62 A S Operating and Storage Temperature Range TJ, Tstg -55 to °C +175 Source Current (Body Diode) IS 17 A 4 Single Pulse Drain-to-Source Avalanche EAS 43 mJ 4 Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 17 A, L = 0.3 mH, RG = 25 W) 1 2 1 Lead Temperature for Soldering TL 260 °C 2 3 Purposes, 1/8? from Case for 10 Seconds 3 DPAK IPAK THERMAL RESI

4.3. ntd6416anl.pdf Size:149K _onsemi

NTD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features • Low RDS(on) http://onsemi.com • High Current Capability • 100% Avalanche Tested • These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 100 V 74 mW @ 10 V 19 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V D Gate-to-Source Voltage - Continuous VGS $20 V Continuous Drain Steady TC = 25°C ID 19 A Current State TC = 100°C 13 G Power Dissipation Steady TC = 25°C PD 71 W State S Pulsed Drain Current tp = 10 ms IDM 70 A Operating and Storage Temperature Range TJ, Tstg -55 to °C 4 +175 4 Source Current (Body Diode) IS 19 A Single Pulse Drain-to-Source Avalanche EAS 50 mJ 2 1 1 Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 3 2 18.2 A, L = 0.3 mH, RG = 25 W) 3 DPAK IPAK Lead Temperature for Soldering TL 260 °C CASE 369AA CASE 369D Purposes, 1/8? from Case for 10 Seconds STYLE 2 STYLE 2 THERMAL RESISTANCE RATINGS Parameter

See also transistors datasheet: NTD5806N , NTD5807N , NTD5862N , NTD5865N , NTD5865NL , NTD5867NL , NTD6414AN , NTD6415AN , IRF511 , NTD6416AN , NTD6416ANL , NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 .

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