NTMFS4941N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: NTMFS4941N

Type of NTMFS4941N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 25.5

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 47

Maximum junction temperature (Tj), °C:

Rise Time of NTMFS4941N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 40.728

Package: SO8FL_/_DFN5

Equivalent transistors for NTMFS4941N

NTMFS4941N PDF documents for downloads:

3.1. ntmfs4939n-d.pdf Size:121K _onsemi

NTMFS4939N Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V 30 V 53 A • CPU Power Delivery 8.0 mW @ 4.5 V • DC-DC Converters D (5,6) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V G (4) Gate-to-Source Voltage VGS ±20 V Continuous Drain TA = 25°C ID 15.7 A Current RqJA S (1,2,3) TA = 100°C 9.9 (Note 1) N-CHANNEL MOSFET Power Dissipation TA = 25°C PD 2.58 W RqJA (Note 1) MARKING Continuous Drain TA = 25°C ID 26 A DIAGRAM Current RqJA ? 10 s TA = 100°C 17 (Note 1) D Power Dissipation TA = 25°C PD 7.6 W S D RqJA ? 10 s (Note 1) 4939N Steady S 1 State AYWWG Continuous Drain TA = 25°C ID

3.2. ntmfs4926n-d.pdf Size:112K _onsemi

NTMFS4926N Power MOSFET 30 V, 44 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses http://onsemi.com • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 7.0 mW @ 10 V Applications 30 V 44 A 12.0 mW @ 4.5 V • CPU Power Delivery • DC-DC Converters D (5,6) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V G (4) Gate-to-Source Voltage VGS ±20 V Continuous Drain TA = 25°C ID 15.5 A Current RqJA S (1,2,3) TA = 100°C 9.8 (Note 1) N-CHANNEL MOSFET Power Dissipation TA = 25°C PD 2.70 W RqJA (Note 1) MARKING Continuous Drain TA = 25°C ID 23.4 A DIAGRAM Current RqJA ? 10 s TA = 100°C 14.8 (Note 1) D Power Dissipation TA = 25°C PD 6.13 W 1 S D RqJA ? 10 s (Note 1) 4926N Steady S

3.3. ntmfs4936n-d.pdf Size:113K _onsemi

NTMFS4936N Power MOSFET 30 V, 79 A, Single N-Channel, SO-8 FL Features • Low RDS(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http://onsemi.com • Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky-Like Performance • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 4.0 mW @ 10 V 30 V 79 A Applications 5.5 mW @ 4.5 V • CPU Power Delivery • DC-DC Converters D (5,6) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V G (4) Gate-to-Source Voltage VGS ±20 V Continuous Drain TA = 25°C ID 19.5 A S (1,2,3) Current RqJA TA = 100°C 12.3 (Note 1) N-CHANNEL MOSFET Power Dissipation TA = 25°C PD 2.62 W MARKING RqJA (Note 1) DIAGRAM Continuous Drain TA = 25°C ID 35 A Current RqJA ? 10 s D TA = 100°C 22 (Note 1) S D Power Dissipation TA = 25°C PD 8.4 W 4936N S 1

3.4. ntmfs4937n.pdf Size:143K _onsemi

NTMFS4937N Power MOSFET 30 V, 70 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses http://onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 4.5 mW @ 10 V • CPU Power Delivery 30 V 70 A 7.0 mW @ 4.5 V • DC-DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) D (5,6) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS ±20 V Continuous Drain TA = 25°C ID 17.1 A G (4) Current RqJA TA = 100°C 10.9 (Note 1) Power Dissipation TA = 25°C PD 2.6 W S (1,2,3) RqJA (Note 1) N-CHANNEL MOSFET Continuous Drain TA = 25°C ID 30 A Current RqJA ? 10 s TA = 100°C 19 MARKING (Note 1) DIAGRAM Power Dissipation TA = 25°C PD 8.1 W RqJA ? 10 s (Note 1) Steady D State Continuous Drain TA = 25°C ID 10.2 A S D Current RqJA

3.5. ntmfs4935n.pdf Size:115K _onsemi

NTMFS4935N Power MOSFET 30 V, 93 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses http://onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.2 mW @ 10 V • CPU Power Delivery, DC-DC Converters 30 V 93 A 4.2 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V D (5,6) Gate-to-Source Voltage VGS ±20 V Continuous Drain TA = 25°C ID 21.8 A Current RqJA TA = 100°C 13.8 (Note 1) G (4) Power Dissipation TA = 25°C PD 2.63 W RqJA (Note 1) Continuous Drain TA = 25°C ID 40 A S (1,2,3) Current RqJA ? N-CHANNEL MOSFET TA = 100°C 25 10 s (Note 1) Power Dissipation TA = 25°C PD 8.7 W RqJA ? 10 s MARKING Steady (Note 1) DIAGRAM State Continuous Drain TA = 25°C ID 13 A D Current RqJA TA =

3.6. ntmfs4921n.pdf Size:117K _onsemi

NTMFS4921N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses http://onsemi.com • Thermally Enhanced SO-8 Package • These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V • CPU Power Delivery 30 V 58.5 A 10.8 mW @ 4.5 V • DC-DC Converters • High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) D (5,6) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS ±20 V G (4) Continuous Drain TA = 25°C ID 13.8 A Current RqJA TA = 85°C 10 (Note 1) S (1,2,3) Power Dissipation TA = 25°C PD 2.14 W RqJA (Note 1) N-CHANNEL MOSFET Continuous Drain TA = 25°C ID 22.4 A Current RqJA v TA = 85°C 16.1 MARKING 10 sec DIAGRAM Power Dissipation TA = 25°C PD 5.61 W RqJA, t v 10 sec D Steady State Continuous Drain TA = 25°C ID 8.8 A S D 1 4

3.7. ntmfs4927-d.pdf Size:112K _onsemi

NTMFS4927N Power MOSFET 30 V, 38 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses http://onsemi.com • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9.0 mW @ 10 V Applications 30 V 38 A 13.5 mW @ 4.5 V • CPU Power Delivery • DC-DC Converters D (5,6) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V G (4) Gate-to-Source Voltage VGS ±20 V Continuous Drain TA = 25°C ID 13.6 A Current RqJA S (1,2,3) TA = 100°C 8.6 (Note 1) N-CHANNEL MOSFET Power Dissipation TA = 25°C PD 2.70 W RqJA (Note 1) MARKING Continuous Drain TA = 25°C ID 20.4 A DIAGRAM Current RqJA ? 10 s TA = 100°C 12.9 (Note 1) D Power Dissipation TA = 25°C PD 6.04 W S D 1 RqJA ? 10 s (Note 1) 4927N Steady S

3.8. ntmfs4925n-d.pdf Size:112K _onsemi

NTMFS4925N Power MOSFET 30 V, 48 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses http://onsemi.com • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 6.0 mW @ 10 V Applications 30 V 48 A 10 mW @ 4.5 V • CPU Power Delivery • DC-DC Converters D (5,6) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V G (4) Gate-to-Source Voltage VGS ±20 V Continuous Drain TA = 25°C ID 16.7 A Current RqJA S (1,2,3) TA = 100°C 10.5 (Note 1) N-CHANNEL MOSFET Power Dissipation TA = 25°C PD 2.70 W RqJA (Note 1) MARKING Continuous Drain TA = 25°C ID 25.2 A DIAGRAM Current RqJA ? 10 s TA = 100°C 15.9 (Note 1) D Power Dissipation TA = 25°C PD 6.16 W 1 S D RqJA ? 10 s (Note 1) 4925N Steady S

See also transistors datasheet: NTMFS4926N , NTMFS4927N , NTMFS4933N , NTMFS4934N , NTMFS4935N , NTMFS4936N , NTMFS4937N , NTMFS4939N , IRF3205 , NTMFS4943N , NTMFS5830NL , NTMFS5832NL , NTMFS5834NL , NTMFS5844NL , NTMS10P02 , NTMS4176P , NTMS4177P .

Keywords