NTP5404N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: NTP5404N

Type of NTP5404N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 254

Maximum drain-source voltage |Uds|, V: 40V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 167

Maximum junction temperature (Tj), °C:

Rise Time of NTP5404N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 40.666

Package: TO2203

Equivalent transistors for NTP5404N

NTP5404N PDF documents for downloads:

1.1. ntb5404n_ntp5404n.pdf Size:128K _onsemi

NTB5404N, NTP5404N Power MOSFET 40 V, 136 A, Single N-Channel, D2PAK & TO-220 Features • Low RDS(on) http://onsemi.com • High Current Capability ID MAX • Low Gate Charge V(BR)DSS RDS(ON) TYP (Note 1) • This is a Pb-Free Device 40 V 3.5 mW @ 10 V 136 A Applications D • Electronic Brake Systems • Electronic Power Steering N-Channel • Bridge Circuits G MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) S Parameter Symbol Value Units MARKING Drain-to-Source Voltage VDSS 40 V DIAGRAMS Gate-to-Source Voltage VGS ±20 V Continuous Drain TC = 25°C ID 136 A Steady Current - RqJC State D2PAK TC = 100°C 96 NTB5404NG CASE 418B 1 AYWW Power Dissipation - Steady PD 167 W 2 STYLE 2 TC = 25°C RqJC State 3 Continuous Drain Steady TA = 25°C ID 24.2 A Current - RqJA State TA = 100°C 17 1 (Note 1) 4 Power Dissipation - Steady TA = 25°C PD 5.3 W RqJA (Note 1) State Pulsed Drain Current tp = 10 ms IDM 258 A TO-220AB Operating Junction and Storage Temperatur

5.1. ntb5411n_ntp5411n.pdf Size:143K _onsemi

NTB5411N, NTP5411N Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220 Features http://onsemi.com • Low RDS(on) • High Current Capability ID MAX • Avalanche Energy Specified V(BR)DSS RDS(ON) MAX (Note 1) • These are Pb-Free Devices 60 V 10 mW @ 10 V 80 A Applications • LED Lighting and LED Backlight Drivers • DC-DC Converters N-Channel • DC Motor Drivers D • Power Supplies Secondary Side Synchronous Rectification MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) G Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 60 V S Gate-to-Source Voltage - Continuous VGS $20 V Gate-to-Source Voltage - Nonrepetitive VGS $30 V 4 (TP < 10 ms) 4 Continuous Drain Steady TC = 25°C ID 80 A Current RqJC State 1 2 TC = 100°C 61 (Note 1) 3 Power Dissipation Steady TC = 25°C PD 166 W RqJC (Note 1) State TO-220AB D2PAK CASE 221A CASE 418B Pulsed Drain Current tp = 10 ms IDM 185 A 1 STYLE 5 STYLE 2 2 Operating and Storage Temperature Range TJ, Tstg -55

5.2. ntb5426n_ntp5426n.pdf Size:113K _onsemi

NTB5426N, NTP5426N Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220 Features http://onsemi.com • Low RDS(on) • High Current Capability • Avalanche Energy Specified ID MAX V(BR)DSS RDS(ON) MAX (Note 1) • These are Pb-Free Devices 60 V 6.0 mW @ 10 V 120 A Applications • Power Supplies • Converters N-Channel • Power Motor Controls D • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit G Drain-to-Source Voltage VDSS 60 V S Gate-to-Source Voltage - Continuous VGS $20 V Gate-to-Source Voltage - Nonrepetitive VGS 30 V 4 (TP < 10 ms) Continuous Drain Steady TC = 25°C ID 120 A 4 Current RqJC State TC = 100°C 85 (Note 1) 1 2 Power Dissipation Steady TC = 25°C PD 215 W 3 RqJC (Note 1) State TO-220AB D2PAK Pulsed Drain Current tp = 10 ms IDM 260 A CASE 221A CASE 418B 1 2 STYLE 5 STYLE 2 Operating and Storage Temperature Range TJ, Tstg -55 to °C 3 +175 MARKING DIAGRAMS Source Current (Body Diode) I

5.3. ntb5412n_ntp5412n.pdf Size:117K _onsemi

NTB5412N, NTP5412N Power MOSFET 60 Amps, 60 Volts N-Channel D2PAK, TO-220 Features http://onsemi.com • Low RDS(on) • High Current Capability ID MAX • Avalanche Energy Specified V(BR)DSS RDS(ON) MAX (Note 1) • These are Pb-Free Devices 60 V 14 mW @ 10 V 60 A Applications • LED Lighting and LED Backlight Drivers • DC-DC Converters N-Channel • DC Motor Drivers D • Power Supplies Secondary Side Synchronous Rectification MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) G Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 60 V S Gate-to-Source Voltage - Continuous VGS $20 V Gate-to-Source Voltage - Nonrepetitive VGS $30 V 4 (TP < 10 ms) 4 Continuous Drain Steady TC = 25°C ID 60 A Current RqJC State TC = 100°C 44 (Note 1) 1 2 3 Power Dissipation Steady TC = 25°C PD 125 W RqJC (Note 1) State TO-220AB D2PAK Pulsed Drain Current tp = 10 ms IDM 155 A CASE 221A CASE 418B 1 STYLE 5 STYLE 2 2 Operating and Storage Temperature Range TJ, Tstg -55

See also transistors datasheet: NTMS4937N , NTMS4939N , NTMS5835NL , NTMS5838NL , NTMS5P02 , NTMS7N03R2 , NTNUS3171PZ , NTP2955 , BF245C , NTP5863N , NTP5864N , NTP6410AN , NTP6411AN , NTP6412AN , NTP6413AN , NTR0202PL , NTR1P02 .

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