NTP5863N
MOSFET transistor datasheet. Parameters and characteristics. Type Designator: NTP5863N
Type of NTP5863N
transistor: MOSFET
Type of control channel: N
-Channel Maximum power dissipation (Pd), W: 115
Maximum drain-source voltage |Uds|, V: 60V
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 97
Maximum junction temperature (Tj), °C:
Rise Time of NTP5863N
transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 0.006
Package: TO2203
Equivalent transistors for NTP5863N
NTP5863N
PDF documents for downloads: PDF unavailable! See also transistors datasheet: NTMS4939N
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. Keywords| NTP5863N
Datasheet | NTP5863N
Datenblatt | NTP5863N
RoHS | NTP5863N
Distributor | | NTP5863N
Application Notes | NTP5863N
Component | NTP5863N
Circuit | NTP5863N
Schematic | | NTP5863N
Equivalent | NTP5863N
Cross Reference | NTP5863N
Data Sheet | NTP5863N
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