NTZD3152P MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: NTZD3152P

Type of NTZD3152P transistor: Dual

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 0.28

Maximum drain-source voltage |Uds|, V: 20V

Maximum gate-source voltage |Ugs|, V: 6

Maximum drain current |Id|, A: 0.43

Maximum junction temperature (Tj), °C:

Rise Time of NTZD3152P transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.5

Package: SOT5636

Equivalent transistors for NTZD3152P

NTZD3152P PDF documents for downloads:

1.1. ntzd3152p.pdf Size:98K _onsemi

NTZD3152P Small Signal MOSFET -20 V, -430 mA, Dual P-Channel with ESD Protection, SOT-563 Features http://onsemi.com • Low RDS(on) Improving System Efficiency V(BR)DSS RDS(on) Typ ID Max • Low Threshold Voltage 0.5 W @ -4.5 V • ESD Protected Gate -20 V 0.6 W @ -2.5 V -430 mA • Small Footprint 1.6 x 1.6 mm 1.0 W @ -1.8 V • These are Pb-Free Devices D1 D2 Applications • Load/Power Switches G1 G2 • Power Supply Converter Circuits • Battery Management • Cell Phones, Digital Cameras, PDAs, Pagers, etc. P-Channel S1 MOSFET S2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) MARKING DIAGRAM 6 Parameter Symbol Value Unit Drain-to-Source Voltage VDSS -20 V 1 TU M G SOT-563-6 Gate-to-Source Voltage VGS ±6.0 V G 1 CASE 463A Continuous Drain Current TA = 25°C -430 mA Steady TU = Specific Device Code ID State TA = 85°C -310 M = Date Code (Note 1) G = Pb-Free Package Power Dissipation Steady State PD 250 mW (Note: Microdot may be in either location) (

3.1. ntzd3156c-d.pdf Size:119K _onsemi

NTZD3156C Small Signal MOSFET 20 V, 540 mA / -20 V, -430 mA Complementary N- and P-Channel MOSFETs with Integrated Pull Up/Down Resistor and ESD Protection http://onsemi.com Features ID Max • Leading Trench Technology for Low RDS(on) Performance V(BR)DSS RDS(on) Max (Note 1) • High Efficiency System Performance 0.55 W @ 4.5 V • Low Threshold Voltage N-Channel 0.7 W @ 2.5 V 540 mA 20 V • Integrated G-S Resistor on Both Devices 0.9 W @ 1.8 V • ESD Protected Gate 0.9 W @ -4.5 V • Small Footprint 1.6 x 1.6 mm P-Channel 1.2 W @ -2.5 V -430 mA -20 V • These are Pb-Free Devices 2.0 W @ -1.8 V Applications PINOUT: SOT-563 • Load/Power Switching with Level Shift • Portable Electronic Products such as GPS, Cell Phones, DSC, PMP, Bluetooth Accessories S1 1 6 D1 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit G1 2 5 G2 Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGS ±6 V D2 3 4 S2 N-Channel Continu- TA = 25°C 540

3.2. ntzd3154n.pdf Size:139K _onsemi

NTZD3154N Small Signal MOSFET 20 V, 540 mA, Dual N-Channel Features • Low RDS(on) Improving System Efficiency http://onsemi.com • Low Threshold Voltage V(BR)DSS RDS(on) Typ ID Max (Note 1) • Small Footprint 1.6 x 1.6 mm • ESD Protected Gate 400 mW @ 4.5 V 20 500 mW @ 2.5 V 540 mA • These are Pb-Free Devices 700 mW @ 1.8 V Applications • Load/Power Switches D1 D2 • Power Supply Converter Circuits • Battery Management • Cell Phones, Digital Cameras, PDAs, Pagers, etc. G1 G2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) N-Channel Parameter Symbol Value Unit MOSFET S1 S2 Drain-to-Source Voltage VDSS 20 V MARKING Gate-to-Source Voltage VGS ±6.0 V DIAGRAM Continuous Drain Current TA = 25°C 540 mA Steady 6 ID (Note 1) State TA = 85°C 390 1 TV M G Power Dissipation PD 250 mW G SOT-563-6 Steady State (Note 1) CASE 463A Continuous Drain Current TA = 25°C 570 mA TV = Specific Device Code t v 5 s ID (Note 1) M = Date Code TA = 85°C 410 G = Pb-F

3.3. ntzd3155c-d.pdf Size:111K _onsemi

NTZD3155C Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. Features http://onsemi.com • Leading Trench Technology for Low RDS(on) Performance ID Max • High Efficiency System Performance V(BR)DSS RDS(on) Typ (Note 1) • Low Threshold Voltage 0.4 W @ 4.5 V • ESD Protected Gate N-Channel 0.5 W @ 2.5 V 540 mA 20 V • Small Footprint 1.6 x 1.6 mm 0.7 W @ 1.8 V • These are Pb-Free Devices 0.5 W @ -4.5 V P-Channel 0.6 W @ -2.5 V -430 mA Applications -20 V 1.0 W @ -1.8 V • DC-DC Conversion Circuits • Load/Power Switching with Level Shift PINOUT: SOT-563 • Single or Dual Cell Li-Ion Battery Operated Systems • High Speed Circuits S1 1 6 D1 • Cell Phones, MP3s, Digital Cameras, and PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) G1 2 5 G2 Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 20 V D2 3 4 S2 Gate-to-Source Voltage VGS ±6 V N-Channel TA = 25°C 540 Steady Continuous Drain State Top View

See also transistors datasheet: NTTFS4941N , NTTFS5116PL , NTTFS5811NL , NTTFS5820NL , NTTFS5826NL , NTUD3127C , NTUD3169CZ , NTUD3170NZ , 3SK45 , NTZD3154N , NTZD3155C , NTZD5110N , NTZS3151P , NUD4700 , NUS3116MT , NUS5530MN , NUS5531 .

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