2SK981A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK981A

Type of 2SK981A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 15

Maximum drain-source voltage |Uds|, V: 450V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 3

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SK981A transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 310

Maximum drain-source on-state resistance (Rds), Ohm: 3

Package: SPAK

Equivalent transistors for 2SK981A

2SK981A PDF documents for downloads:

5.1. 2sk982.pdf Size:142K _toshiba

2SK982 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK982 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications • Excellent switching times: ton = 14 ns (typ.) • High forward transfer admittance: |Y | = 100 mS (min) fs @I = 50 mA D • Low on resistance: RDS (ON) = 0.6 ? (typ.) @ ID = 50 mA • Enhancement-mode • Complementary to 2SJ148 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 60 V Gate-source voltage VGSS ±20 V DC ID 200 JEDEC TO-92 Drain current mA Pulse IDP 800 JEITA SC-43 Drain power dissipation TOSHIBA 2-5F1H PD 400 mW (Ta 25°C) Weight: 0.21 g (typ.) Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C 1 2003-03-26 2SK982 Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS ±10 V, VDS 0 ±100 nA Drain cut-off

See also transistors datasheet: 2SK972 , 2SK973L , 2SK973S , 2SK974L , 2SK974S , 2SK975 , 2SK979 , 2SK981 , BUZ90 , 2SK985 , 2SK987 , 2SK988 , 2SK989 , 2SK990 , 2SK991 , 2SK992 , 2SK993 .

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