FMP36-015P MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FMP36-015P

Type of FMP36-015P transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 150V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 22

Maximum junction temperature (Tj), °C:

Rise Time of FMP36-015P transistor (tr), nS: 15ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 110

Package: ISOPLUS_i4Pak

Equivalent transistors for FMP36-015P

FMP36-015P PDF documents for downloads:

1.1. fmp36-015p.pdf Size:101K _ixys

Advance Technical Information P CH. N CH. PolarTM P & N-Channel FMP36-015P Power MOSFETs VDSS - 150V 150V Common Drain Topology 3 4 ID25 - 22A 36A T1 5 5 ? ? RDS(on) 110m? 40m? ? ? ? ? ? ? 4 3 T2 trr(typ) 228ns 150ns 1 1 2 2 Symbol Test Conditions Maximum Ratings ISOPLUS i4-PakTM TJ - 55 ... +150 °C TJM 150 °C Tstg - 55 ... +150 °C TL 1.6mm (0.062 in.) from case for 10s 300 °C VISOL 50/60HZ, RMS, t=1s, leads-to-tab 2500 V~ FC Mounting force 20..120 / 4.5..27 N/lb. 1 Isolated Tab 5 Symbol Test Conditions Characteristic Values Min. Typ. Max. CP Coupling capacitance between shorted 40 pF Features pins and mounting tab in the case Silicon chip on Direct-Copper Bond dS ,dA pin - pin 1.7 mm (DCB) substrate dS ,dA pin - backside metal 5.5 mm - UL recognized package - Isolated mounting surface Weight 9 g - 2500V electrical isolation Avalanche rated Low QG P - CHANNEL Low Drain-to-Tab capacitance Low package inductance Symbol

See also transistors datasheet: FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF , FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , IRF9640 , FMP76-01T , GMM3x100-01X1-SMD , GMM3x100-01X1-SMD , GMM3x120-0075X2-SMD , GMM3x120-0075X2-SMD , GMM3x160-0055X2-SMD , GMM3x160-0055X2-SMD , GMM3x180-004X2-SMD .

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