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IXFC13N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFC13N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 139 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 12 A

Rise Time (tr): 250 nS

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: ISOPLUS220

IXFC13N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXFC13N50 PDF doc:

5.1. ixfc110n10p.pdf Size:230K _ixys

IXFC13N50
IXFC13N50

IXFC 110N10P VDSS = 100 V PolarHVTM HiPerFET ID25 = 60 A Power MOSFET ? ? RDS(on) ? 17 m? ? ? ? ? ? ? ISOPLUS220TM ? trr ? 150 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100

5.2. ixfc14n60p.pdf Size:229K _ixys

IXFC13N50
IXFC13N50

IXFC 14N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 8 A Power MOSFET ? ? RDS(on) ? 630 m? ? ? ? ? ? ? ISOPLUS220TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600

5.3. ixfc16n50p.pdf Size:223K _ixys

IXFC13N50
IXFC13N50

IXFC 16N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 10 A Power MOSFET ? ? RDS(on) ? 450 m? ? ? ? ? ? ? ISOPLUS220TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated ISOPLUS220TM (IXFC) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500

Datasheet: IXFB70N60Q2 , IXFB72N55Q2 , IXFB80N50Q2 , IXFB82N60P , IXFB82N60Q3 , IXFC10N80P , IXFC110N10P , IXFC12N80P , BUZ11 , IXFC14N60P , IXFC14N80P , IXFC15N80Q , IXFC16N50P , IXFC16N80P , IXFC20N80P , IXFC22N60P , IXFC24N50 .

 


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