IXFH20N80P MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXFH20N80P

Type of IXFH20N80P transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 500

Maximum drain-source voltage |Uds|, V: 800V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 20

Maximum junction temperature (Tj), °C:

Rise Time of IXFH20N80P transistor (tr), nS: 250ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.52

Package: TO247

Equivalent transistors for IXFH20N80P

IXFH20N80P PDF documents for downloads:

1.1. ixfh20n80q_ixfk20n80q_ixft20n80q.pdf Size:149K _ixys

IXFH20N80Q VDSS = 800 V HiPerFETTM IXFK20N80Q ID25 = 20 A Power MOSFETs ? ? IXFT20N80Q RDS(on) = 0.42 ? ? ? Q-Class N-Channel Enhancement Mode ? ? trr ? 250 ns ? ? Avalanche Rated, Low Qg, High dv/dt Preliminary Data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 800 V (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C20 A TO-268 (D3) ( IXFT) IDM TC = 25°C, pulse width limited by TJM 80 A IAR TC = 25°C20 A G EAR TC = 25°C45 mJ S EAS TC = 25°C 1.5 J dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 5 V/ns TJ ? 150°C, RG = 2 ? TO-264 AA (IXFK) PD TC = 25°C 360 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C G D S D (TAB) TL 1.6 mm (0.063 in) from case for 10 s 300 °C G = Gate Md Mounting torque TO-247 1.13/10 Nm/lb.in. S = Source TAB = Drain TO-264 0.9/6 Nm/lb.in. Weight TO-247 6 g TO-268 4 g TO-264 10 g Features IXYS advanced low Qg process

1.2. ixfh20n80p_ixft20n80p_ixfv20n80p.pdf Size:326K _ixys

IXFH 20N80P VDSS = 800 V PolarHVTM HiPerFET IXFT 20N80P ID25 = 20 A Power MOSFET IXFV 20N80P ? ? RDS(on) ? 520 m ? ? ? ? ? ? ? N-Channel Enhancement Mode IXFV 20N80PS ? trr ? 250 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 M? 800 V (TAB) VGSS Continuous ± 30 V VGSM Transient ± 40 V TO-268 (IXFT) ID25 TC = 25° C20 A IDM TC = 25° C, pulse width limited by TJM 50 A IAR TC = 25° C10 A G S EAR TC = 25° C30 mJ D (TAB) EAS TC = 25° C 1.0 J PLUS220 (IXFV) dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns TJ ?150° C, RG = 4 ? PD TC = 25° C 500 W TJ -55 ... +150 °C G D (TAB) DS TJM 150 °C Tstg -55 ... +150 °C PLUS220 SMD(IXFV..S) TL Maximum lead temperature for soldering 300 °C TSOLD Plastic case for 10 s 260 °C Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. G FC Mounting force (PLUS220) 1..65 / 2.5..15 N/lb S D (TAB) Weight

3.1. ixfh15n60_ixfh20n60_ixfm15n60_ixfm20n60.pdf Size:82K _ixys

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 15 A TO-204 AE (IXFM) 20N60 20 A IDM TC = 25°C, pulse width limited by TJM 15N60 60 A 20N60 80 A IAR TC = 25°C 15N60 15 A 20N60 20 A G EAR TC = 25°C30 mJ D dv/dt IS ? IDM, di/dt ? 100 A/ms, VDD ? VDSS, 5 V/ns G = Gate, D = Drain, TJ ? 150°C, RG = 2 W S = Source, TAB = Drain PD TC = 25°C 300 W TJ -55 ... +150 °C Features • International standard packages TJM 150 °C • Low RDS (on) HDMOSTM process Tstg -55 ... +150 °C • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) TL 1.6 mm (0.062 in.) from case for 10 s 300 °C rated Md Mounting torque 1.13

See also transistors datasheet: IXFH16N50P , IXFH16N80P , IXFH16N90Q , IXFH170N10P , IXFH17N80Q , IXFH18N60P , IXFH18N90P , IXFH20N100P , 2SK2996 , IXFH21N50F , IXFH21N50Q , IXFH22N50P , IXFH22N60P , IXFH22N60P3 , IXFH230N075T2 , IXFH230N10T , IXFH23N60Q .

Keywords