IXFH60N50P3 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXFH60N50P3

Type of IXFH60N50P3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1040

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 60

Maximum junction temperature (Tj), °C:

Rise Time of IXFH60N50P3 transistor (tr), nS: 250ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.1

Package: TO247

Equivalent transistors for IXFH60N50P3

IXFH60N50P3 PDF documents for downloads:

5.1. ixfh67n10_ixfh75n10_ixfm67n10_ixfm75n10.pdf Size:94K _ixys

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 67 N10 100 V 67 A 25 mW Power MOSFETs IXFH/IXFM 75 N10 100 V 75 A 20 mW trr ? 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 67N10 67 A TO-204 AE (IXFM) 75N10 75 A IDM TC = 25°C, pulse width limited by TJM 67N10 268 A 75N10 300 A IAR TC = 25°C 67N10 67 A 75N10 75 A G EAR TC = 25°C30 mJ D dv/dt IS ? IDM, di/dt ? 100 A/ms, VDD ? VDSS, 5 V/ns G = Gate, D = Drain, TJ ? 150°C, RG = 2 W S = Source, TAB = Drain PD TC = 25°C 300 W TJ -55 ... +150 °C Features International standard packages TJM 150 °C Low RDS (on) HDMOSTM process Tstg -55 ... +150 °C Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) TL 1.6 mm (0.062 in.) from case for 10 s 300 °C rated Md Mounting torque 1.13/10 Nm/l

5.2. ixfh6n90_ixfh6n100_ixfm6n90_ixfm6n100.pdf Size:77K _ixys

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 6 N90 900 V 6 A 1.8 W Power MOSFETs IXFH/IXFM 6 N100 1000 V 6 A 2.0 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 6N90 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V (TAB) VGSM Transient ±30 V ID25 TC = 25°C6 A TO-204 AA (IXFM) IDM TC = 25°C, pulse width limited by TJM 24 A IAR TC = 25°C6 A EAR TC = 25°C18 mJ dv/dt IS ? IDM, di/dt ? 100 A/ms, VDD ? VDSS, 5 V/ns TJ ? 150°C, RG = 2 W G D PD TC = 25°C 180 W G = Gate, D = Drain, TJ -55 ... +150 °C S = Source, TAB = Drain TJM 150 °C Tstg -55 ... +150 °C Features • International standard packages TL 1.6 mm (0.062 in.) from case for 10 s 300 °C • Low RDS (on) HDMOSTM process Md Mounting torque 1.13/10 Nm/lb.in. • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) Weight TO-204 = 18 g, TO-247 = 6 g rated

5.3. ixfh69n30p_ixft69n30p.pdf Size:176K _ixys

IXFH 69N30P VDSS = 300 V PolarHTTM HiPerFET IXFT 69N30P ID25 = 69 A Power MOSFET ? ? RDS(on) ? 49 m? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 M? 300 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V G D S ID25 TC = 25° C69 A IDM TC = 25° C, pulse width limited by TJM 200 A IAR TC = 25° C69 A TO-268 (IXFT) EAR TC = 25° C50 mJ EAS TC = 25° C 1.5 J dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns G TJ ?150° C, RG = 4 ? S D (TAB) PD TC = 25° C 500 W TJ -55 ... +150 °C G = Gate D = Drain TJM 150 °C S = Source TAB = Drain Tstg -55 ... +150 °C TL 1.6 mm (0.062 in.) from case for 10 s 300 ° C TSOLD Plastic body for 10 s 260 ° C Md Mounting torque 1.13/10 Nm/lb.in. Features Weight TO-247 6 g l International standard packages TO-268 4 g l Unclamped Inductive Switchin

See also transistors datasheet: IXFH44N50P , IXFH50N30Q3 , IXFH50N60P3 , IXFH52N30P , IXFH52N50P2 , IXFH5N100P , IXFH60N20 , IXFH60N20F , IRFB3306 , IXFH66N20Q , IXFH68N20 , IXFH69N30P , IXFH6N100F , IXFH6N120 , IXFH6N120P , IXFH70N20Q3 , IXFH74N20 .

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