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IXFH66N20Q MOSFET (IC) Datasheet. Cross Reference Search. IXFH66N20Q Equivalent

Type Designator: IXFH66N20Q

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 400

Maximum Drain-Source Voltage |Vds|, V: 200

Maximum Gate-Source Voltage |Vgs|, V:

Maximum Drain Current |Id|, A: 66

Maximum Junction Temperature (Tj), °C:

Rise Time (tr), nS: 200

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.04

Package: TO247

IXFH66N20Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXFH66N20Q PDF doc:

5.1. ixfh69n30p_ixft69n30p.pdf Size:176K _ixys

IXFH66N20Q
IXFH66N20Q

IXFH 69N30P VDSS = 300 V PolarHTTM HiPerFET IXFT 69N30P ID25 = 69 A Power MOSFET ? ? RDS(on) ? 49 m? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 300 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V

5.2. ixfh67n10_ixfh75n10_ixfm67n10_ixfm75n10.pdf Size:94K _ixys

IXFH66N20Q
IXFH66N20Q

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 67 N10 100 V 67 A 25 mW Power MOSFETs IXFH/IXFM 75 N10 100 V 75 A 20 mW trr ? 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C; RGS = 1 MW 100 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 67N10 67

5.3. ixfh60n25q_ixfk60n25q_ixft60n25q.pdf Size:71K _ixys

IXFH66N20Q
IXFH66N20Q

Advanced Technical Information IXFH 60N25Q HiPerFETTM VDSS = 250 V IXFK 60N25Q Power MOSFETs ID25 = 60 A IXFT 60N25Q Q-Class RDS(on) = 47 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 250

5.4. ixfh6n100q_ixft6n100q.pdf Size:116K _ixys

IXFH66N20Q
IXFH66N20Q

VDSS = 1000 V IXFH 6N100Q HiPerFETTM ID25 = 6 A IXFT 6N100Q Power MOSFETs Ω RDS(on) = 1.9 Ω Ω Ω Ω Q-Class ≤ ≤ trr ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VG

5.5. ixfh6n90_ixfh6n100_ixfm6n90_ixfm6n100.pdf Size:77K _ixys

IXFH66N20Q
IXFH66N20Q

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 6 N90 900 V 6 A 1.8 W Power MOSFETs IXFH/IXFM 6 N100 1000 V 6 A 2.0 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 6N90 900 V VDGR TJ = 25C to 150C; RGS = 1 MW 6N100 1000 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25

See also transistors datasheet: IXFH50N30Q3 , IXFH50N60P3 , IXFH52N30P , IXFH52N50P2 , IXFH5N100P , IXFH60N20 , IXFH60N20F , IXFH60N50P3 , IRFP4332 , IXFH68N20 , IXFH69N30P , IXFH6N100F , IXFH6N120 , IXFH6N120P , IXFH70N20Q3 , IXFH74N20 , IXFH74N20P .

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