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IXFN100N50P MOSFET (IC) Datasheet. Cross Reference Search. IXFN100N50P Equivalent

Type Designator: IXFN100N50P

Type of IXFN100N50P transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1040

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 90

Maximum junction temperature (Tj), °C:

Rise Time of IXFN100N50P transistor (tr), nS: 200

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.049

Package: SOT227B

IXFN100N50P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXFN100N50P PDF doc:

1.1. ixfn100n50p.pdf Size:152K _ixys

IXFN100N50P
IXFN100N50P

IXFN 100N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 90 A Power MOSFET ? ? RDS(on) ? 49 m? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 500 V S G VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS Continuous 30 V VGSM Transie

2.1. ixfn100n10s1-s2-s3.pdf Size:99K _ixys

IXFN100N50P
IXFN100N50P

HiPerFETTM Power MOSFETs IXFN 100N10S1 VDSS = 100 V IXFN 100N10S2 with Schottky Diodes ID25 = 100 A IXFN 100N10S3 Ω RDS(on) = 15 mΩ Ω Ω Ω m~ê~ääÉäI=_ìÅâ=C==_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë S2 QEaF QEaF S1 S3 QEaF PEhF NEdF NEdF NEdF PE^F OEpF OEpF OIPEpF Symbol Test Conditions Maximum Rati

2.2. ixfk90n20_ixfn100n20_ixfn106n20.pdf Size:111K _ixys

IXFN100N50P
IXFN100N50P

VDSS ID25 RDS(on) HiPerFETTM IXFK 90 N 20 200 V 90 A 23 mW Power MOSFETs IXFN 100 N 20 200 V 100 A 23 mW IXFN 106 N 20 200 V 106 A 20 mW N-Channel Enhancement Mode trr £ 200 ns Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN IXFN 90N20 100N20 106N20 VDSS TJ = 25°C to 150°C 200 200 200 V G (TAB) VDGR TJ = 25°C t

2.3. ixfn100n25.pdf Size:70K _ixys

IXFN100N50P
IXFN100N50P

Advanced Technical Information HiPerFETTM IXFN 100N25 VDSS = 250 V ID25 = 100 A Power MOSFETs Single MOSFET Die RDS(on) = 27 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25°C to 150°C 250 V S VDGR TJ = 25°C to 150°C; RGS = 1 MW 250 V G VGS Continuous ±20 V

See also transistors datasheet: IXFL60N80P , IXFL70N60Q2 , IXFL80N50Q2 , IXFL82N60P , IXFN100N10S1 , IXFN100N10S2 , IXFN100N10S3 , IXFN100N20 , BF245C , IXFN100N50Q3 , IXFN102N30P , IXFN110N60P3 , IXFN132N50P3 , IXFN140N20P , IXFN140N25T , IXFN140N30P , IXFN160N30T .

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