IXFN30N120P MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXFN30N120P

Type of IXFN30N120P transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 890

Maximum drain-source voltage |Uds|, V: 1200V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 30

Maximum junction temperature (Tj), °C:

Rise Time of IXFN30N120P transistor (tr), nS: 300ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.35

Package: SOT227B

Equivalent transistors for IXFN30N120P

IXFN30N120P PDF documents for downloads:

5.1. ixfk32n60_ixfn32n60_ixfk36n60_ixfn36n60.pdf Size:192K _ixys

IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Preliminary Data VDSS ID25 RDS(on) trr IXFK/FN 36N60 600V 36A 0.18? 250ns HiPerFETTM Power MOSFET IXFK/FN 32N60 600V 32A 0.25? 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 600 600 V G VDGR TJ = 25°C to 150°C; RGS = 1 M? 600 600 V D (TAB) D S VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V miniBLOC, SOT-227 B (IXFN) E153432 ID25 TC = 25°C, Chip capability 32N60 32 32 A S 36N60 36 36 A G IDM TC = 25°C, pulse width limited by TJM 32N60 128 128 A 36N60 144 144 A IAR TC = 25°C20 20 A S D EAR TC = 25°C30 30 mJ G = Gate D = Drain dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS 5 5 V/ns S = Source TAB = Drain TJ ? 150°C, RG = 2 ? Either Source terminal at miniBLOC can be used as Main or Kelvin Source PD TC = 25°C 500 520 W TJ -55 ... +150 °C TJM 150 °C Features Tstg -55 ... +150 °C • International s

5.2. ixfn34n100.pdf Size:570K _ixys

IXFN 34N100 VDSS = 1000V HiPerFETTM ID25 = 34A Power MOSFETs ? RDS(on) = 0.28? ? ? ? Single Die MOSFET D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25°C to 150°C 1000 V S VDGR TJ = 25°C to 150°C; RGS = 1 M? 1000 V G VGS Continuous ±20 V VGSM Transient ±30 V S ID25 TC = 25°C, Chip capability 34 A D IDM TC = 25°C, pulse width limited by TJM 136 A IAR TC = 25°C34 A G = Gate D = Drain EAR TC = 25°C64 mJ S = Source TAB = Drain EAS TC = 25°C4 J Either Source terminal at miniBLOC can be used as Main or Kelvin Source dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 5 V/ns TJ? 150°C, RG = 2 ? Features PD TC= 25°C 700 W •International standard packages TJ -55 ... +150 °C •miniBLOC, with Aluminium nitride TJM 150 °C isolation Tstg -55 ... +150 °C •Low RDS (on) HDMOSTM process •Rugged polysilicon gate cell structure VISOL 50/60 Hz, RMS t = 1 min

5.3. ixfn340n07.pdf Size:104K _ixys

HiPerFETTM IXFN 340N07 VDSS = 70 V Power MOSFETs ID25 = 340 A ? ? Single Die MOSFET RDS(on) = 4 m? ? ? D ? trr ? ? 200 ns ? ? N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low trr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25°C to 150°C70 V S VDGR TJ = 25°C to 150°C; RGS = 1 M? 70 V G VGS Continuous ±20 V VGSM Transient ±30 V S ID25 TC = 25°C, Chip capability 340 A D IL(RMS) Terminal current limit 100 A IDM TC = 25°C, pulse width limited by TJM 1360 A IAR TC = 25°C 200 A G = Gate D = Drain S = Source EAR TC = 25°C64 mJ Either Source terminal at miniBLOC can be used EAS TC = 25°C4 J as Main or Kelvin Source dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 10 V/ns TJ ? 150°C, RG = 2 ? PD TC = 25°C 700 W Features TJ -55 ... +150 °C • International standard package TJM 150 °C • miniBLOC, with Aluminium nitride Tstg -55 ... +150 °C isolation VISOL 50/60 Hz, RMS t = 1 min 2500 V~ • Low R

See also transistors datasheet: IXFN240N15T2 , IXFN24N100F , IXFN26N100P , IXFN26N120P , IXFN27N80Q , IXFN280N085 , IXFN300N10P , IXFN30N110P , 75321P , IXFN320N17T2 , IXFN32N100P , IXFN32N100Q3 , IXFN32N120 , IXFN32N120P , IXFN32N80P , IXFN340N06 , IXFN34N100 .

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