IXFP16N50P MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXFP16N50P

Type of IXFP16N50P transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 300

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 16

Maximum junction temperature (Tj), °C:

Rise Time of IXFP16N50P transistor (tr), nS: 200ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.4

Package: TO220

Equivalent transistors for IXFP16N50P

IXFP16N50P PDF documents for downloads:

1.1. ixfa16n50p_ixfh16n50p_ixfp16n50p.pdf Size:252K _ixys

IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) ? 400 m? ? ? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 M? 500 V VGS Continuous ±30 V VGSM Transient ±40 V G S (TAB) ID25 TC = 25° C16 A IDM TC = 25° C, pulse width limited by TJM 35 A IAR TC = 25° C16 A TO-247 (IXFH) EAR TC = 25° C25 mJ EAS TC = 25° C 750 mJ dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns TJ ?150° C, RG = 10 ? G PD TC = 25° C 300 W D S TJ -55 ... +150 °C D (TAB) TJM 150 °C Tstg -55 ... +150 °C TO-220 (IXTP) TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 s soldering 260 °C Md Mounting torque (TO-247 & TO-220) 1.13/10 Nm/lb.in. Weight TO-220 4 g (TAB) G D TO-263 3 g S TO-247 5.5 g G = Gate D = Drain S = Source TAB = Drai

5.1. ixfa14n60p_ixfh14n60p_ixfp14n60p.pdf Size:257K _ixys

IXFA 14N60P VDSS = 600 V PolarHVTM HiPerFET IXFH 14N60P ID25 = 14 A Power MOSFET ? ? IXFP 14N60P RDS(on) ? 550 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V G VDGR TJ = 25° C to 150° C; RGS = 1 M? 600 V S (TAB) VGS Continuous ±30 V VGSM Tranisent ±40 V TO-247 (IXFH) ID25 TC = 25° C14 A IDM TC = 25° C, pulse width limited by TJM 42 A IAR TC = 25° C14 A EAR TC = 25° C23 mJ G D EAS TC = 25° C 0.9 J S dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns TJ ?150° C, RG = 4 ? TO-220 (IXFP) PD TC = 25° C 300 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C (TAB) G D TL 1.6 mm (0.062 in.) from case for 10 s 300 ° C S TSOLD Plastic body for 10 s 260 ° C Md Mounting torque (TO-3P,TO-220) 1.13/10 Nm/lb.in. G = Gate D = Drain S = Source TAB = Drain Weight TO-247 6 g TO-220 4 g TO-263 2 g Features l International standard packages

5.2. ixfa110n15t2_ixfp110n15t2.pdf Size:204K _ixys

Preliminary Technical Information TrenchT2TM HiperFET VDSS = 150V IXFA110N15T2 ID25 = 110A Power MOSFET IXFP110N15T2 ? ? RDS(on) ? ? ? 13m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25°C to 175°C 150 V (TAB) VDGR TJ = 25°C to 175°C, RGS = 1M? 150 V TO-220 VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 TC = 25°C 110 A IDM TC = 25°C, pulse width limited by TJM 300 A G D (TAB) S IA TC = 25°C50 A EAS TC = 25°C 800 mJ dV/dt IS ? IDM,, VDD ? VDSS,TJ ? 175°C 15 V/ns G = Gate D = Drain S = Source TAB = Drain PD TC = 25°C 480 W TJ -55 ... +175 °C Features TJM 175 °C Tstg -55 ... +175 °C International standard packages 175°C Operating Temperature TL 1.6mm (0.062in.) from case for 10s 300 °C High current handling capability Tsold Plastic body for 10 seconds 260 °C Fast intrinsic Rectifier Md Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. Dynamic dV/dt rated Weight T

5.3. ixfa180n10t2_ixfp180n10t2.pdf Size:208K _ixys

Preliminary Technical Information TrenchT2TM HiperFETTM VDSS = 100V IXFA180N10T2 Power MOSFET ID25 = 180A IXFP180N10T2 ? ? RDS(on) ? ? ? 6m? ? ? ? ? N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V TO-220AB (IXFP) VDGR TJ = 25°C to 175°C, RGS = 1M? 100 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C (Chip Capability) 180 A G D D (Tab) ILRMS Lead Current Limit, RMS 120 A S IDM TC = 25°C, Pulse Width Limited by TJM 450 A IA TC = 25°C90 A G = Gate D = Drain S = Source Tab = Drain EAS TC = 25°C 750 mJ dv/dt IS ? IDM, VDD ? VDSS, TJ ? 175°C 15 V/ns PD TC = 25°C 480 W Features TJ -55 ... +175 °C TJM 175 °C International Standard Packages Avalanche Rated Tstg -55 ... +175 °C 175°C Operating Temperature TL 1.6mm (0.062in.) from Case for 10s 300 °C High Current Handling Capability Tsold Plastic Body for 10 Seconds

See also transistors datasheet: IXFP10N60P , IXFP10N80P , IXFP110N15T2 , IXFP12N50P , IXFP12N50PM , IXFP130N10T , IXFP130N10T2 , IXFP14N60P , IRLR2905 , IXFP180N10T2 , IXFP22N60P3 , IXFP230N075T2 , IXFP3N120 , IXFP3N50PM , IXFP3N80 , IXFP4N100P , IXFP4N100PM .

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