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IXFR180N06 MOSFET (IC) Datasheet. Cross Reference Search. IXFR180N06 Equivalent

Type Designator: IXFR180N06

Type of IXFR180N06 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 417

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 180

Maximum junction temperature (Tj), °C:

Rise Time of IXFR180N06 transistor (tr), nS: 200

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.005

Package: ISOPLUS247

IXFR180N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXFR180N06 PDF doc:

1.1. ixfr180n085.pdf Size:57K _ixys

IXFR180N06
IXFR180N06

HiPerFETTM Power MOSFETs IXFR 180N085 VDSS = 85 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 7 mW trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25°C to 150°C85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 85 V VGS Continuous ±20 V VGSM Transient ±30 V G D ID25 TC = 25°C

1.2. ixfr180n07.pdf Size:32K _ixys

IXFR180N06
IXFR180N06

HiPerFETTM Power MOSFETs IXFR 180N07 VDSS = 70 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 6 mW trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25°C to 150°C70 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 70 V G VGS Continuous ±20 V D VGSM Transient ±30 V Isolated back surface* ID

2.1. ixfr180n15p.pdf Size:152K _ixys

IXFR180N06
IXFR180N06

IXFR 180N15P VDSS = 150 V PolarHVTM HiPerFET ID25 = 100 A Power MOSFET ? ? RDS(on) ? 13 m? ? ? ? ? ? ? ISOPLUS247TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 175 C 150 V E153432 VDGR TJ = 25 C to 175 C; RGS = 1 M? 150

2.2. ixfr180n10.pdf Size:33K _ixys

IXFR180N06
IXFR180N06

HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 V ISOPLUS247TM ID25 = 165 A (Electrically Isolated Back Surface) RDS(on)= 8 mW trr ? 250 ns Single MOSFET Die Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C; RGS = 1 MW 100 V VGS Continuous 20 V G VGSM Transient 30 V D Isolated back surface* ID25 TC = 25C

See also transistors datasheet: IXFR100N25 , IXFR102N30P , IXFR140N20P , IXFR140N30P , IXFR14N100Q2 , IXFR150N15 , IXFR15N100Q3 , IXFR16N120P , IRF9540N , IXFR180N15P , IXFR18N90P , IXFR200N10P , IXFR20N100P , IXFR20N120P , IXFR20N80P , IXFR21N100Q , IXFR230N20T .

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