IXFR20N100P MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXFR20N100P

Type of IXFR20N100P transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 230

Maximum drain-source voltage |Uds|, V: 1000V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 11

Maximum junction temperature (Tj), °C:

Rise Time of IXFR20N100P transistor (tr), nS: 300ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.64

Package: ISOPLUS247

Equivalent transistors for IXFR20N100P

IXFR20N100P PDF documents for downloads:

3.1. ixfc20n80p_ixfr20n80p.pdf Size:133K _ixys

IXFC 20N80P VDSS = 800 V PolarHVTM HiPerFET IXFR 20N80P ID25 = 10 A Power MOSFET ? ? RDS(on) ? 500 m? ? ? ? ? ? ? Electrically Isolated Back Surface ? trr ? 250 ns ? ? ? N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25°C to 150°C 800 V E153432 VDGR TJ = 25°C to 150°C; RGS = 1 M? 800 V VGSS Continuous ±30 V VGSM Transient ±40 V G D Isolated back surface ID25 TC = 25°C11 A S IDM TC = 25°C, pulse width limited by TJM 60 A IAR TC = 25°C10 A ISOPLUS247TM (IXFR) EAR TC = 25°C30 mJ E153432 EAS TC = 25°C 1.0 J dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 10 V/ns TJ ? 150°C, RG = 3 ? PD TC = 25°C 166 W Isolated back surface TJ -55 ... +150 °C TJM 150 °C G = Gate D = Drain Tstg -55 ... +150 °C S = Source TL 1.6 mm (0.062 in.) from case for 10 s 300 °C Features Silicon chip on Direct-Copper-Bond VISOL 50/60 Hz, RMS, t = 1minute, leads-to-tab 2500 V~ substrate

4.1. ixfr200n10p.pdf Size:101K _ixys

VDSS = 100 V IXFR 200N10P PolarTM HiPerFET ID25 = 133 A Power MOSFET ? ? RDS(on) ? 9 m? ? ? ? ? ? ? Electrically Isolated Tab ? tRR ? 150 ns ? ? ? N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V ISOPLUS247 (IXFR) VDGR TJ = 25°C to 175°C; RGS = 1 M? 100 V E153432 VGS Continous ±20 V VGSM Transient ±30 V G ID25 TC = 25°C 133 A D ISOLATED TAB S ID(RMS) External lead current limit 75 A IDM TC = 25°C, pulse width limited by TJM 400 A G = Gate D = Drain S = Source IAR TC = 25°C60 A EAR TC = 25°C 100 mJ EAS TC = 25°C4 J Features dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 10 V/ns Silicon chip on Direct-Copper-Bond TJ ? 150°C, RG = 4 ? substrate PD TC = 25°C 300 W - High power dissipation - Isolated mounting surface TJ -55 ... +175 °C - 2500V electrical isolation TJM 175 °C Low drain to tab capacitance(<30pF) Tstg -55 ... +150 °C Fast recovery intrinsi

5.1. ixfr24n80p.pdf Size:94K _ixys

IXFR 24N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 13 A Power MOSFET ? ? RDS(on) ? 420 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 800 V VGSS Continuous ±30 V G D Isolated Tab VGSM Transient ±40 V S ID25 TC = 25°C13 A IDM TC = 25°C, pulse width limited by TJM 55 A G = Gate D = Drain S = Source IAR TC = 25°C12 A EAR TC = 25°C50 mJ EAS TC = 25°C 1.5 J dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 10 V/ns Features TJ ? 150°C, RG = 2 ? Silicon chip on Direct-Copper-Bond PD TC = 25°C 208 W substrate - High power dissipation TJ -55 ... +150 °C - Isolated mounting surface TJM 150 °C - 2500V electrical isolation Tstg -55 ... +150 ° C International standard package TL 1.6 mm (0.062 in.) from case for 10 s 300 °C Fast

See also transistors datasheet: IXFR14N100Q2 , IXFR150N15 , IXFR15N100Q3 , IXFR16N120P , IXFR180N06 , IXFR180N15P , IXFR18N90P , IXFR200N10P , IRLML2502 , IXFR20N120P , IXFR20N80P , IXFR21N100Q , IXFR230N20T , IXFR24N80P , IXFR24N90P , IXFR24N90Q , IXFR26N100P .

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